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PDF NTND31225CZ Data sheet ( Hoja de datos )
| Número de pieza | NTND31225CZ | |
| Descripción | Small Signal MOSFET | |
| Fabricantes | ON Semiconductor | |
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NTND31225CZ
Small Signal MOSFET
20 V, Complementary 0.65 mm x 0.90 mm
x 0.4 mm XLLGA6 Package
Features
• Advanced Trench Complementary MOSFET
• Offers a Low RDS(ON) Solution in the Ultra Small
0.65 mm × 0.90 mm Package
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
• Small Signal Load Switch with Level Shift
• Analog Switch
• High Speed Interfacing
• Optimized for Power Management in Ultra Portable Products
MAXIMUM RATINGS (TJ = 25°C unless otherwise specified)
Parameter
Symbol Value Unit
Drain-to-Source Voltage
NMOS
VDSS
20
V
PMOS
−20
Gate-to-Source Voltage
NMOS
VGSS
±8
V
PMOS
±8
N−Channel
Continuous Drain
Current (Note 1)
P−Channel
Continuous Drain
Current (Note 1)
Power Dissipation
(Note 1)
Steady
State
t≤5s
Steady
State
t≤5s
Steady
State
TA = 25°C
TA = 85°C
TA = 25°C
TA = 25°C
TA = 85°C
TA = 25°C
TA = 25°C
ID
ID
PD
220
158
253
−127
−91
−146
125
mA
mA
mW
t≤5s
166
Pulsed Drain Current NMOS
PMOS
tp = 10 ms IDM
846
−488
mA
Source Current (Body Diode)
IS 200 mA
−200
Operating Junction and Storage Temperature
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
TJ,
TSTG
TL
−55 to
150
260
°C
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Surface-mounted on FR4 board using the minimum recommended pad size,
1 oz Cu.
www.onsemi.com
V(BR)DSS
N−Channel
20 V
P−Channel
−20 V
RDS(ON) MAX
1.5 W @ 4.5 V
2.0 W @ 2.5 V
3.0 W @ 1.8 V
4.5 W @ 1.5 V
5.0 W @ −4.5 V
6.0 W @ −2.5 V
7.0 W @ −1.8 V
10.0 W @ −1.5 V
ID Max
220 mA
−127 mA
DEVICE SYMBOL
D1
S2
G1 G2
S1
NMOS
D2
PMOS
MARKING DIAGRAM
XLLGA6
Case 713AC
L
M
LM
1
= Specific Device Code
= Date Code
PINOUT DIAGRAM
6 D1
S1 1
5 G2
G1 2
4 S2
D2 3
(Bottom View)
ORDERING INFORMATION
See detailed ordering and shipping information on page 3 of
this data sheet.
© Semiconductor Components Industries, LLC, 2015
November, 2015 − Rev. 0
1
Publication Order Number:
NTND31225CZ/D
1 page  
NTND31225CZ
TYPICAL CHARACTERISTICS − P−CHANNEL
25
20
CISS
15
VGS = 0 V
TJ = 25°C
f = 1 MHz
10
COSS
5
CRSS
0
0
5
10 15
−VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 7. Capacitance Variation
20
0.010
0.009
VGS = 0 V
0.008
0.007
TJ = 125°C
0.006
0.005
0.004
TJ = 25°C
0.003
0.002
0.3
0.4
0.5
TJ = −55°C
0.6 0.7
0.8
0.9 1.0
−VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 9. Diode Forward Voltage vs. Current
1000
td(off)
tf
100 tr
td(on)
VGS = −4.5 V
VDS = −15 V
ID = −0.2 A
10
1 10 100
RG, GATE RESISTANCE (W)
Figure 8. Resistive Switching Time Variation
vs. Gate Resistance
1
VGS ≤ −4.5 V
Single Pulse
TC = 25°C
0.1
10 ms
100 ms
1 ms
0.01
0.001
0.1
10 ms
RDS(on) Limit
Thermal Limit
Package Limit
dc
1 10
100
−VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 10. Maximum Rated Forward Biased
Safe Operating Area
1000
Duty Cycle = 0.5
0.2
0.1
100 0.05
0.02
0.01
10
Single Pulse
1
0.000001 0.00001
0.0001
0.001
0.01
0.1
t, PULSE TIME (s)
Figure 11. Thermal Response
1
10 100 1000
www.onsemi.com
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