NTND3184NZ PDF даташит
Спецификация NTND3184NZ изготовлена «ON Semiconductor» и имеет функцию, называемую «Small Signal MOSFET». |
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Детали детали
Номер произв | NTND3184NZ |
Описание | Small Signal MOSFET |
Производители | ON Semiconductor |
логотип |
5 Pages
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NTND3184NZ
Small Signal MOSFET
20 V, 200 mA, Dual N−Channel,
0.65 mm x 0.90 mm x 0.4 mm XLLGA−6
Package
Features
• Dual N−Channel MOSFET
• Offers a Low RDS(ON) Solution in the Ultra Small 0.65 mm
x 0.90 mm Package
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
• Small Signal Load Switch
• Analog Switch
• High Speed Interfacing
• Optimized for Power Management in Ultra Portable Products
MAXIMUM RATINGS (TJ = 25°C unless otherwise specified)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current (Note 1)
Steady
State
Power Dissipation
(Note 1)
tv5s
Steady
State
TA = 25°C
TA = 85°C
TA = 25°C
TA = 25°C
VDSS
VGS
ID
PD
20 V
±8 V
200 mA
140
220
125 mW
tv5s
166
Pulsed Drain Current
tp = 10 ms
Operating Junction and Storage Temperature
Source Current (Body Diode) (Note 2)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
IDM
TJ,
TSTG
IS
TL
800
−55 to
150
200
260
mA
°C
mA
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Surface−mounted on FR4 board using the minimum recommended pad size,
1 oz Cu.
2. Pulse Test: pulse width v300 ms, duty cycle v2%
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V(BR)DSS
20 V
RDS(ON) MAX
1.5 W @ 4.5 V
2.0 W @ 2.5 V
3.0 W @ 1.8 V
4.5 W @ 1.5 V
D1
ID Max
200 mA
D2
G1 G2
N−Channel
S1 MOSFET
S2
XLLGA6
Case 713AC
PINOUT DIAGRAM
6 D1
S1 1
5 G2
G1 2
4 S2
D2 3
(Bottom View)
MARKING DIAGRAM
AM
1
A = Specific Device Code
M = Date Code
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
© Semiconductor Components Industries, LLC, 2015
November, 2015 − Rev. 1
1
Publication Order Number:
NTND3184NZ/D
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NTND3184NZ
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Junction−to−Ambient – Steady State (Note 3)
Junction−to−Ambient – t ≤ 5 s (Note 3)
RqJA
3. Surface−mounted on FR4 board using the minimum recommended pad size, 1 oz Cu.
Max
998
751
Unit
°C/W
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current
ON CHARACTERISTICS (Note 4)
V(BR)DSS
IDSS
IGSS
VGS = 0 V, ID = 250 mA
VGS = 0 V, VDS = 5 V
TJ = 25°C
TJ = 85°C
VGS = 0 V, VDS = 16 V
TJ = 25°C
VDS = 0 V, VGS = ±5.0 V
20
50
200
100
±100
V
nA
nA
nA
Gate Threshold Voltage
Drain−to−Source On Resistance
Forward Transconductance
Forward Diode Voltage
CAPACITANCES
VGS(TH)
RDS(ON)
gFS
VSD
VGS = VDS, ID = 250 mA
VGS = 4.5 V, ID = 100 mA
VGS = 2.5 V, ID = 50 mA
VGS = 1.8 V, ID = 20 mA
VGS = 1.5 V, ID = 10 mA
VDS = 5.0 V, ID = 125 mA
VGS = 0 V, IS = 10 mA
0.4 1.0
0.8 1.5
1.1 2.0
1.4 3.0
1.8 4.5
0.48
0.6 1.0
V
W
S
V
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
CISS
COSS
CRSS
f = 1 MHz, VGS = 0 V
VDS = 15 V
12.3
3.4 pF
2.5
SWITCHING CHARACTERISTICS, VGS = 4.5 V (Note 4)
Turn−On Delay Time
td(ON)
16.5
Rise Time
Turn−Off Delay Time
tr
td(OFF)
VGS = 4.5 V, VDD = 10 V,
ID = 200 mA, RG = 3 W
25.5
ns
142
Fall Time
tf
80
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Switching characteristics are independent of operating junction temperatures.
ORDERING INFORMATION
Device
NTND3184NZTAG
Package
XLLGA6
(Pb−Free)
Shipping†
8000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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2
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NTND3184NZ
TYPICAL CHARACTERISTICS
0.4 0.4
5 V to
1.8 V
VGS = 1.6 V
VDS = 5 V
0.3 0.3
0.2
1.4 V
0.2
0.1
1.2 V
0.1
0.0
0.0
TJ = 25°C
1.0 2.0 3.0 4.0 5.0
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
0.0
0
TJ = −55°C
TJ = 25°C
TJ = 125°C
0.4 0.8 1.2 1.6
VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 2. Transfer Characteristics
2
5.0 5.0
TJ = 25°C
TJ = 25°C
4.0
ID = 0.22 A
4.0
VGS = 1.5 V
3.0 3.0
2.0
1.0
0.0
1.0 2.0 3.0 4.0 5.0
VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
2.0 VGS = 1.8 V
1.0 VGS = 2.5 V
VGS = 4.5 V
0
0.1 0.2 0.3 0.4
ID, DRAIN CURRENT (A)
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
1.8
VGS = 4.5 V
1.6 ID = 0.10 A
1.4
1.2
1.0
0.8
0.6
−50 −25 0
25 50 75 100 125
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On−Resistance Variation with
Temperature
1000.00
100.00
TJ = 150°C
TJ = 125°C
10.00
1.00
TJ = 85°C
0.10 TJ = 25°C
0.01
VGS = 0 V
150 0 5 10 15 20
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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NTND3184NZ | Small Signal MOSFET | ON Semiconductor |
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