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NTNS3C94NZ PDF даташит

Спецификация NTNS3C94NZ изготовлена ​​​​«ON Semiconductor» и имеет функцию, называемую «Small Signal MOSFET».

Детали детали

Номер произв NTNS3C94NZ
Описание Small Signal MOSFET
Производители ON Semiconductor
логотип ON Semiconductor логотип 

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NTNS3C94NZ Даташит, Описание, Даташиты
NTNS3C94NZ
Product Preview
Small Signal MOSFET
12 V, 384 mA, Single N−Channel,
0.62 x 0.62 x 0.4 mm XLLGA3 Package
Features
Single N−Channel MOSFET
Ultra Small and Thin Package (0.62 x 0.62 x 0.4 mm)
Low RDS(on) Solution in 0.62 x 0.62 mm Package
1.5 V Gate Voltage Rating
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
Small Signal Load Switch
Analog Switch
High Speed Interfacing
Optimized for Power Management in Ultra Portable Products
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol Value
Units
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Steady
Current (Note 1)
State
Power Dissipa-
tion (Note 1)
t5s
Steady
State
TA = 25°C
TA = 85°C
TA = 25°C
TA = 25°C
VDSS
VGS
ID
PD
12 V
±10 V
384 mA
277
413
120 mW
t 5 s TA = 25°C
Pulsed Drain Current
tp = 10 ms
Operating Junction and Storage
Temperature
Source Current (Body Diode) (Note 2)
Lead Temperature for Soldering Purposes
(1/8from case for 10 s)
IDM
TJ,
TSTG
IS
TL
140
TBD
-55 to
150
384
260
mA
°C
mA
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE RATINGS
Parameter
Symbol Max Units
Junction-to-Ambient – Steady State (Note 1)
RθJA
1040 °C/W
Junction-to-Ambient – t 5 s (Note 1)
RθJA
900
1. Surface Mounted on FR4 Board using the minimum recommended pad size,
(or 2 mm2), 1 oz Cu.
2. Pulse Test: pulse width 300 ms, duty cycle 2%.
This document contains information on a product under development. ON Semiconductor
reserves the right to change or discontinue this product without notice.
www.onsemi.com
V(BR)DSS
12 V
MOSFET
RDS(on) MAX
0.48 W @ 4.5 V
0.53 W @ 3.7 V
0.60 W @ 3.3 V
0.80 W @ 2.5 V
1.90 W @ 1.8 V
ID MAX
384 mA
N−Channel MOSFET
D (3)
G (1)
S (2)
MARKING
DIAGRAM
3
2
1
XLLGA3
CASE 713AB
1
XM
X = Specific Device Code
M = Date Code
ORDERING INFORMATION
Device
NTNS3C94NZT5G
Package
XLLGA3
(Pb−Free)
Shipping
8000 /
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2015
May, 2015 − Rev. P1
1
Publication Order Number:
NTNS3C94NZ/D









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NTNS3C94NZ Даташит, Описание, Даташиты
NTNS3C94NZ
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
Min Typ Max Units
OFF CHARACTERISTICS
Drain-to-Source Breakdown Voltage
Drain-to-Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS
V(BR)DSS/TJ
VGS = 0 V, ID = 250 mA
ID = 250 mA, ref to 25°C
12
3.7
V
mV/°C
Zero Gate Voltage Drain Current
Gate-to-Source Leakage Current
ON CHARACTERISTICS (Note 3)
IDSS
IGSS
VGS = 0 V,
VDS = 9.6 V
TJ = 25°C
VDS = 0 V, VGS = ±10 V
1.0 mA
±10 mA
Gate Threshold Voltage
Negative Gate Threshold
Temperature Coefficient
VGS(TH)
VGS(TH)/TJ
VGS = VDS, ID = 250 mA
0.4
0.8
1.0 V
mV/°C
Drain-to-Source On Resistance
Forward Transconductance
Source−Drain Diode Voltage
CHARGES & CAPACITANCES
RDS(on)
gFS
VSD
VGS = 4.5 V, ID = 100 mA
VGS = 3.7 V, ID = 75 mA
VGS = 3.3 V, ID = 75 mA
VGS = 2.5 V, ID = 50 mA
VGS = 1.8 V, ID = 20 mA
VGS = 1.5 V, ID = 10 mA
VDS = 5 V, ID = 100 mA
VGS = 0 V, IS = 100 mA
0.32
0.36
0.40
0.54
1.0
1.8
TBD
0.75
0.48
0.53
0.60
0.80
1.9
1.0
W
S
V
Input Capacitance
CISS
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
Total Gate Charge
QG(TOT)
Threshold Gate Charge
QG(TH)
Gate−to−Source Charge
QGS
Gate−to−Drain Charge
QGD
SWITCHING CHARACTERISTICS, VGS = 4.5 V (Note 3)
VGS = 0 V, f = 1 MHz,
VDS =9. 6 V
VGS = 4.5 V, VDS = 9.6 V,
ID = 100 mA
32 pF
6.3
4.7
0.9 nC
0.1
0.2
0.2
Turn-On Delay Time
td(ON)
8.0 ns
Rise Time
Turn-Off Delay Time
tr
td(OFF)
VGS = 4.5 V, VDD = 9.6 V,
ID = 100 mA, RG = 2 W
7.5
147
Fall Time
tf
78
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Switching characteristics are independent of operating junction temperatures.
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NTNS3C94NZ Даташит, Описание, Даташиты
NTNS3C94NZ
PACKAGE DIMENSIONS
D
PIN ONE
REFERENCE
ÉÉÉÉ0.10 C
AB
E
0.10 C TOP VIEW
XLLGA3, 0.62x0.62, 0.35P
CASE 713AB
ISSUE O
0.10 C
A
3X 0.10 C
A1
SIDE VIEW
C
SEATING
PLANE
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
MILLIMETERS
DIM MIN MAX
A 0.340 0.440
A1 0.000 0.030
b 0.100 0.200
D 0.620 BSC
D2 0.175 BSC
D3 0.205 BSC
E 0.620 BSC
E2 0.400 0.600
e 0.350 BSC
K 0.200 REF
L 0.090 0.210
L2 0.110 0.310
e/2
e
2
D3
D2
3
E2
2X b
0.10 M C A B
1
L2
K
0.05 M C
2X L
BOTTOM VIEW
0.10 M C A B
0.05 M C
RECOMMENDED
SOLDER FOOTPRINT*
2X 0.280
2X
0.200
0.350
PITCH
1
2
PACKAGE
OUTLINE
0.600
3
0.350
0.760
DIMENSIONS: MILLIMETERS
*Additional information concerning board mounting for this
package may be found in Document AND9099/D, “Board Level
Application Note for XLLGA 3-Lead 0.62x0.62 Package”.
For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks,
copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC
reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any
particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without
limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications
and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC
does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for
surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where
personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and
its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly,
any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture
of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
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For additional information, please contact your local
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NTNS3C94NZ/D










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Номер в каталогеОписаниеПроизводители
NTNS3C94NZSmall Signal MOSFETON Semiconductor
ON Semiconductor

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