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PDF HMC471MS8GE Data sheet ( Hoja de datos )

Número de pieza HMC471MS8GE
Descripción SiGe HBT DUAL CHANNEL GAIN BLOCK MMIC AMPLIFIER
Fabricantes Hittite Microwave Corporation 
Logotipo Hittite Microwave Corporation Logotipo



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HMC471MS8G / 471MS8GE
v01.0605
SiGe HBT DUAL CHANNEL GAIN
BLOCK MMIC AMPLIFIER, DC - 5 GHz
9
9 - 52
Typical Applications
The HMC471MS8G / HMC471MS8GE is a dual RF/IF
gain block & LO or PA driver:
• Cellular / PCS / 3G
• Fixed Wireless & WLAN
• CATV, Cable Modem & DBS
• Microwave Radio & Test Equipment
Functional Diagram
Features
P1dB Output Power: +20 dBm
Gain: 20 dB
Output IP3: +34 dBm
Supply (Vs): +6V to +12V
14.9 mm2 Ultra Small 8 Lead MSOP
General Description
The HMC471MS8G & HMC471MS8GE are SiGe HBT
Dual Channel Gain Block MMIC SMT amplifiers cov-
ering DC to 5 GHz. These versatile products contain
two gain blocks, packaged in a single 8 lead plas-
tic MSOP, for use as either separate cascadable 50
Ohm RF/IF gain stages, LO or PA drivers or with both
amplifiers combined utilizing external 90° hybrids to
create a high linearity driver amplifier. Each ampli-
fier in the HMC471MS8G(E) offers 20 dB of gain,
+20 dBm P1dB with a +34 dBm output IP3 at 850
MHz while requiring only 80 mA from a single positive
supply. The combined dual amplifier circuit delivers
up to +21 dBm P1dB with +36 dBm OIP3 for specific
application bands through 4 GHz.
Electrical Specifications, Vs= 8.0 V, Rbias= 39 Ohm, TA = +25° C
Parameter
Min. Typ.
Gain
Gain Variation Over Temperature
Input Return Loss
Output Return Loss
Reverse Isolation
Output Power for 1 dB Compression (P1dB)
Output Third Order Intercept (IP3)
(Pout= 0 dBm per tone, 1 MHz spacing)
Noise Figure
DC - 1.0 GHz
1.0 - 2.0 GHz
2.0 - 3.0 GHz
3.0 - 4.0 GHz
4.0 - 5.0 GHz
DC - 5 GHz
DC - 2.0 GHz
2.0 - 4.0 GHz
4.0 - 5.0 GHz
DC - 1.0 GHz
1.0 - 2.0 GHz
2.0 - 4.0 GHz
4.0 - 5.0 GHz
DC - 5 GHz
0.5 - 1.0 GHz
1.0 - 2.0 GHz
2.0 - 3.0 GHz
3.0 - 4.0 GHz
4.0 - 5.0 GHz
0.5 - 1.0 GHz
1.0 - 2.0 GHz
2.0 - 3.0 GHz
3.0 - 4.0 GHz
4.0 - 5.0 GHz
DC - 4 GHz
4.0 - 5.0 GHz
18.5 21
15.5 17.5
13 15
10.5 12.5
8 10
0.008
12
14
8
13
9
7
5
20
16 19
14 17
11 14
9 12
7 10
34
32
27
25
22
3.25
4.0
Supply Current (Icq)
80
Note: Data taken with broadband bias tee on device output. All specifications refer to a single amplifier.
Max.
0.012
Units
dB
dB
dB
dB
dB
dB/ °C
dB
dB
dB
dB
dB
dB
dB
dB
dBm
dBm
dBm
dBm
dBm
dBm
dBm
dBm
dBm
dB
dB
mA
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
www.BDTIC.com/Hittite/Order On-line at www.hittite.com

1 page




HMC471MS8GE pdf
v01.0605
HMC471MS8G / 471MS8GE
SiGe HBT DUAL CHANNEL GAIN
BLOCK MMIC AMPLIFIER, DC - 5 GHz
9
Absolute Maximum Ratings
Collector Bias Voltage (Vcc)
Collector Bias Current (Icc)
RF Input Power (RFIN)(Vcc = +4.2 Vdc)
Junction Temperature
Continuous Pdiss (T = 85 °C)
(derate 32.6 mW/°C above 85 °C)
Thermal Resistance
(junction to ground paddle)
Storage Temperature
Operating Temperature
ESD Sensitivity (HBM)
+6.0 Vdc
100 mA
+14 dBm
150 °C
2.12 W
30.7 °C/W
-65 to +150 °C
-40 to +85 °C
Class 1A
Outline Drawing
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
NOTES:
1. LEADFRAME MATERIAL: COPPER ALLOY
2. DIMENSIONS ARE IN INCHES [MILLIMETERS]
3. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE.
4. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE.
5. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO
PCB RF GROUND.
9 - 56
Package Information
Part Number
Package Body Material
HMC471MS8G
Low Stress Injection Molded Plastic
Lead Finish
Sn/Pb Solder
HMC471MS8GE RoHS-compliant Low Stress Injection Molded Plastic 100% matte Sn
[1] Max peak reflow temperature of 235 °C
[2] Max peak reflow temperature of 260 °C
[3] 4-Digit lot number XXXX
MSL Rating
MSL1 [1]
MSL1 [2]
Package Marking [3]
H471
XXXX
H471
XXXX
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
www.BDTIC.com/Hittite/Order On-line at www.hittite.com

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