NL3HS2222 PDF даташит
Спецификация NL3HS2222 изготовлена «ON Semiconductor» и имеет функцию, называемую «High-Speed USB 2.0 (480 Mbps) DPDT Switches». |
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Детали детали
Номер произв | NL3HS2222 |
Описание | High-Speed USB 2.0 (480 Mbps) DPDT Switches |
Производители | ON Semiconductor |
логотип |
10 Pages
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NL3HS2222
High-Speed USB 2.0
(480 Mbps) DPDT Switches
The NL3HS2222 is a DPDT switch optimized for high−speed
USB 2.0 applications within portable systems. It features ultra−low on
capacitance, CON = 7.5 pF (typ), and a bandwidth above 950 MHz. It
is optimized for applications that use a single USB interface connector
to route multiple signal types. The CON and RON of both channels are
suitably low to allow the NL3HS2222 to pass any speed USB data or
audio signals going to a moderately resistive terminal such as an
external headset. The device is offered in a UQFN10 1.4 mm x 1.8 mm
package.
Features
• Optimized Flow−Through Pinout
• RON: 5.0 W Typ @ VCC = 4.2 V
• CON: 7.5 pF Typ @ VCC = 3.3 V
• VCC Range: 1.65 V to 4.5 V
• Typical Bandwidth: 950 MHz
• 1.4 mm x 1.8 mm x 0.50 mm UQFN10
• OVT on Common Signal Pins D+/D− up to 5.25 V
• 8 kV HBM ESD Protection on All Pins
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Typical Applications
• High Speed USB 2.0 Data
• Mobile Phones
• Portable Devices
www.onsemi.com
MARKING
DIAGRAM
UQFN10
AV MG
CASE 488AT
G
1
AV = Device Code
M = Date Code
G = Pb−Free Device
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package Shipping†
NL3HS2222MUTBG UQFN10 3000 / Tape &
(Pb−Free)
Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
NL3HS2222
HS
USB
XCVR
FS USB
XCVR or
AUDIO
AMP
Figure 1. Application Diagram
© Semiconductor Components Industries, LLC, 2016
April, 2016 − Rev. 0
1
Publication Order Number:
NL3HS2222/D
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NL3HS2222
Figure 2. Pin Connections and Logic Diagram (Top View)
Table 1. PIN DESCRIPTION
Pin Function
S
OE
HSD1+, HSD1−, HSD2+,
HSD2−, D+, D−
Control Input
Output Enable
Data Ports
Table 2. TRUTH TABLE
OE S
1X
00
01
HSD1+,
HSD1−
OFF
ON
OFF
HSD2+,
HSD2−
OFF
OFF
ON
MAXIMUM RATINGS
Symbol
Pins
Parameter
Value
Unit
VCC VCC Positive DC Supply Voltage
VIS
HSDn+,
Analog Signal Voltage
HSDn−
−0.5 to +5.5
−0.5 to VCC + 0.3
V
V
D+, D−
−0.5 to +5.25
VIN
ICC
TS
IIS_CON
S, OE
VCC
HSDn+,
HSDn−,
D+, D−
Control Input Voltage, Output Enable Voltage
Positive DC Supply Current
Storage Temperature
Analog Signal Continuous Current−Closed Switch
−0.5 to +5.5
50
−65 to +150
$300
V
mA
°C
mA
IIS_PK
HSDn+,
HSDn−,
D+, D−
Analog Signal Continuous Current 10% Duty Cycle
$500
mA
IIN
S, OE
Control Input Current, Output Enable Current
$20
mA
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
RECOMMENDED OPERATING CONDITIONS
Symbol
Pins
Parameter
Min Max Unit
VCC Positive DC Supply Voltage
VIS
HSDn+,
Analog Signal Voltage
HSDn−
1.65
GND
4.5 V
VCC
V
D+, D−
GND
4.5
VIN
S, OE
Control Input Voltage, Output Enable Voltage
GND
VCC
V
TA Operating Temperature
−40 +85 °C
Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond
the Recommended Operating Ranges limits may affect device reliability.
ESD PROTECTION
Symbol
ESD
Human Body Model − All Pins
Parameter
Value
8.0
Unit
kV
www.onsemi.com
2
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NL3HS2222
DC ELECTRICAL CHARACTERISTICS
CONTROL INPUT, OUTPUT ENABLE VOLTAGE (Typical: T = 25°C)
Symbol
VIH
VIL
IIN
Pins
S, OE
S, OE
S, OE
Parameter
Control Input, Output
Enable HIGH Voltage
(See Figure 11)
Control Input, Output
Enable LOW Voltage
(See Figure 11)
Current Input, Output
Enable Leakage Current
Test Conditions
0 ≤ VIS ≤ VCC
VCC (V)
2.7
3.3
4.2
2.7
3.3
4.2
1.65 − 4.5
−40°C to +85°C
Min Typ Max
1.25 −
1.3
1.4
−
− − 0.35
0.4
0.5
− − ±1.0
Unit
V
V
mA
SUPPLY CURRENT AND LEAKAGE (Typical: T = 25°C, VCC = 3.3 V)
Symbol
ICC
IOZ
IOFF
Pins
VCC
D+, D−
Parameter
Quiescent Supply Current
OFF State Leakage
Power OFF Leakage
Current
Test Conditions
0 ≤ VIS ≤ VCC; ID = 0 A
0 ≤ VIS ≤ VCC − 0.5 V
0 ≤ VIS ≤ VCC
0 ≤ VIS ≤ VCC
VCC (V)
1.65 − 3.6
3.6 − 4.5
1.65 − 4.5
0
−40°C to +85°C
Min Typ Max
− − 1.0
− − 1.0
− ±0.1 ±1.0
− − ±1.0
Unit
mA
mA
mA
LIMITED VIS SWING ON RESISTANCE (Typical: T = 25°C)
−40°C to +85°C
Symbol
RON
Pins
Parameter
On−Resistance (Note 1)
Test Conditions
ION = 8 mA
VIS = 0 V to 0.4 V
VCC (V)
Min
Typ
Max Unit
2.7 − 6.0 8.6 W
3.3 5.5 7.6
4.2 5.0 7.0
RFLAT
On−Resistance Flatness
(Notes 1 and 2)
ION = 8 mA
VIS = 0 V to 0.4 V
2.7
− 0.55 −
W
3.3 0.30
4.2 0.20
DRON
On−Resistance Matching ION = 8 mA
(Notes 1 and 3)
VIS = 0 V to 0.4 V
2.7
− 0.60 −
W
3.3 0.60
4.2 0.60
1. Guaranteed by design.
2. Flatness is defined as the difference between the maximum and minimum value of On−Resistance as measured over the specified analog
signal ranges.
3. DRON = RON(max) − RON(min) between HSD1+ and HSD1− or HSD2+ and HSD2−.
FULL VIS SWING ON RESISTANCE (Typical: T = 25°C)
Symbol
RON
Pins
Parameter
On−Resistance
Test Conditions
ION = 8 mA
VIS = 0 V to VCC
VCC (V)
2.7
3.3
4.2
−40°C to +85°C
Min Typ Max
− 10 13.5
8.0 9.75
7.0 8.50
Unit
W
RFLAT
On−Resistance Flatness
(Notes 4 and 5)
ION = 8 mA
VIS = 0 V to VCC
2.7
− 4.5 −
W
3.3 3.0
4.2 2.5
DRON
On−Resistance
(Note 4 and 6)
ION = 8 mA
VIS = 0 V to VCC
2.7
− 0.60 −
W
3.3 0.60
4.2 0.60
4. Guaranteed by design.
5. Flatness is defined as the difference between the maximum and minimum value of On−Resistance as measured over the specified analog
signal ranges.
6. DRON = RON(max) − RON(min) between HSD1+ and HSD1− or HSD2+ and HSD2−.
www.onsemi.com
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NL3HS2222 | High-Speed USB 2.0 (480 Mbps) DPDT Switches | ON Semiconductor |
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