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NSL12TT1 PDF даташит

Спецификация NSL12TT1 изготовлена ​​​​«ON Semiconductor» и имеет функцию, называемую «High Current Surface Mount PNP Silicon Transistor».

Детали детали

Номер произв NSL12TT1
Описание High Current Surface Mount PNP Silicon Transistor
Производители ON Semiconductor
логотип ON Semiconductor логотип 

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NSL12TT1 Даташит, Описание, Даташиты
NSL12TT1
High Current Surface
Mount PNP Silicon
Low VCE(sat) Transistor for
Battery Operated
Applications
MAXIMUM RATINGS (TA = 25°C)
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current – Peak
Collector Current – Continuous
Electrostatic Discharge
Symbol
VCEO
VCBO
VEBO
IC
ESD
THERMAL CHARACTERISTICS
Characteristic
Symbol
Total Device Dissipation
TA = 25°C
Derate above 25°C
PD (Note 1)
Thermal Resistance,
Junction to Ambient
RθJA (Note 1)
Total Device Dissipation
TA = 25°C
Derate above 25°C
PD (Note 2)
Thermal Resistance,
Junction to Ambient
RθJA (Note 2)
Thermal Resistance,
Junction to Lead #3
RθJL
Junction and Storage
Temperature Range
TJ, Tstg
1. FR–4 @ Minimum Pad
2. FR–4 @ 1.0 X 1.0 inch Pad
Max Unit
–12 Vdc
–20 Vdc
–4.0 Vdc
–1.0 Adc
–0.5
HBM Class 3B
MM Class C
Max Unit
210 mW
1.7 mW/°C
595 °C/W
365 mW
2.9 mW/°C
340 °C/W
205 °C/W
–55 to
+150
°C
http://onsemi.com
12 VOLTS
1.0 AMPS
PNP TRANSISTOR
COLLECTOR
3
1
BASE
2
EMITTER
3
2
1
CASE 463
SOT–416/SC–75
STYLE 1
DEVICE MARKING
L2
L2 = Specific Device Code
ORDERING INFORMATION
Device
Package
Shipping
NSL12TT1
SOT–416 3000/Tape & Reel
© Semiconductor Components Industries, LLC, 2002
February, 2002 – Rev. 2
1
Publication Order Number:
NSL12TT1/D









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NSL12TT1 Даташит, Описание, Даташиты
NSL12TT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = –10 mAdc, IB = 0)
V(BR)CEO
Collector–Base Breakdown Voltage
(IC = –0.1 mAdc, IE = 0)
V(BR)CBO
Emitter–Base Breakdown Voltage
(IE = –0.1 mAdc, IC = 0)
V(BR)EBO
Collector Cutoff Current
(VCB = –12 Vdc, IE = 0)
ICBO
Collector–Emitter Cutoff Current
(VCES = –9 Vdc)
ICES
Emitter Cutoff Current
(VEB = –4.0 Vdc)
IEBO
ON CHARACTERISTICS
DC Current Gain (Note 3)
(IC = –100 mA, VCE = –1.0 V)
(IC = –100 mA, VCE = –2.0 V)
(IC = –500 mA, VCE = –2.0 V)
Collector–Emitter Saturation Voltage (Note 3)
(IC = –50 mA, IB = –0.5 mA)
(IC = –100 mA, IB = –1.0 mA)
(IC = –250 mA, IB = –2.5 mA)
(IC = –250 mA, IB = –5.0 mA)
(IC = –500 mA, IB = –5.0 mA)
(IC = –500 mA, IB = –50 mA)
(IC = –1.0 A, IB = –100 mA)
hFE
VCE(sat)
Base–Emitter Saturation Voltage (Note 3)
(IC = –150 mA, IB = –20 mA)
VBE(sat)
Base–Emitter Turn–on Voltage (Note 3)
(IC = –150 mA, VCE = –3.0 V)
VBE(on)
Input Capacitance
(VEB = 0 V, f = 1.0 MHz)
Cibo
Output Capacitance
(VCB = 0 V, f = 1.0 MHz)
Cobo
Turn–On Time
(IBI = –50 mA, IC = –500 mA, RL = 3.0 )
ton
Turn–Off Time
(IB1 = IB2 = –50 mA, IC = –500 mA, RL = 3.0 )
3. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle 2%
Figure 1.
toff
Min
–12
–20
–4.0
150
150
100
Typical
Max
Unit
–18
–28
–7.0
–0.03
–0.03
–0.01
Vdc
Vdc
Vdc
mAdc
–0.1
mAdc
–0.1
mAdc
–0.1
200 –
200 –
150 –
–0.070
–0.110
–0.190
–0.165
–0.300
–0.210
–0.410
–0.110
–0.150
–0.240
–0.370
–0.81
–0.90
–0.81
–0.875
52 –
30 –
50 –
80 –
V
V
V
pF
pF
ns
ns
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2









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NSL12TT1 Даташит, Описание, Даташиты
NSL12TT1
1
0.1 IC/IB = 200
100
50
0.01
10
1
IC/IB = 100
0.1
–55°C
25°C
TA = 125°C
0.001
0.001
TA = 25°C
0.01 0.1
1
IC, COLLECTOR CURRENT (AMPS)
Figure 1. Collector Emitter Saturation Voltage
vs. Collector Current
0.01
0.001
0.01 0.1
IC, COLLECTOR CURRENT (AMPS)
1
Figure 2. Collector Emitter Saturation Voltage
vs. Collector Current
600
500
125°C
400
VCE = 1.0 V
300
25°C
200
TA = –55°C
100
0
0.001
0.01 0.1
IC, COLLECTOR CURRENT (AMPS)
Figure 3. DC Current Gain
1
1
IC/IB = 50
0.1
25°C
–55°C
TA = 125°C
0.01
0.001
0.01
0.1
1
IC, COLLECTOR CURRENT (AMPS)
Figure 4. Collector Emitter Saturation Voltage
vs. Collector Current
1
0.9 TA = 25°C
0.8
0.7 IC = 1.0 A
0.6
0.5
0.4
50 mA
0.3
500 mA
0.2
10 mA
0.1
5.0 mA
0
0.00001 0.0001
250 mA
100 mA
0.001
0.01
0.1
1
IB, BASE CURRENT (AMPS)
Figure 5. Collector Emitter Saturation Voltage
vs Base Current
1.2
1
–55°C
0.8 25°C
0.6 TA = 125°C
0.4
0.2
0
0.001
0.01 0.1
IC, COLLECTOR CURRENT (AMPS)
1
Figure 6. Base Emitter Saturation Voltage vs.
Collector Current
http://onsemi.com
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Номер в каталогеОписаниеПроизводители
NSL12TT1High Current Surface Mount PNP Silicon TransistorON Semiconductor
ON Semiconductor

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