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PDF SCH2805 Data sheet ( Hoja de datos )

Número de pieza SCH2805
Descripción P-Channel Silicon MOSFET
Fabricantes ON Semiconductor 
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SCH2805
Ordering number : ENN7760
SCH2805
MOSFET : P-Channel Silicon MOSFET
SBD : Schottky Barrier Diode
General-Purpose Switching Device
Features
Applications
Composite type with a P-channel sillicon MOSFET (MCH3314) and a Schottky barrier diode (SB0105)
contained in one package facilitating high-density mounting.
[MOSFET]
Low ON-resistance.
Ultrahigh-speed switching.
4V drive.
[SBD]
Short reverse recovery time.
Low forward voltage.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
[MOSFET]
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
[SBD]
Repetitive Peak Reverse Voltage
Nonrepetitive Peak Reverse Surge Voltage
Average Output Current
Surge Forward Current
Junction Temperature
Storage Temperature
Marking : QE
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
VRRM
VRSM
IO
IFSM
Tj
Tstg
Conditions
PW10µs, duty cycle1%
Mounted on a ceramic board (900mm20.8mm) 1unit
50Hz sine wave, 1 cycle
Ratings
Unit
--60
±20
--0.5
--2 A
0.6
150
--55 to +125
V
V
A
W
°C
°C
50
50
100
2
--55 to +125
--55 to +125
V
V
mA
A
°C
°C
© 2011, SCILLC. All rights reserved.
Jan-2011, Rev. 0
Rev.0 I Pwagwew1.oofn6seImwiw.cwo.omnsemi.com
Publication Order Number:
SCH2805/D

1 page




SCH2805 pdf
SCH2805
IF -- VF
[SBD]
5
3
2
100
7
5
3
2
10
7
5
3
2
1.0
7
5
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7
Forward Voltage, VF -- V
PF(AV) -- IO
0.10
(1) Rectangular wave θ=60°
ID00260
[SBD]
(2) Rectangular wave θ=120°
0.08 (3) Rectangular wave θ=180°
(4) Sine wave θ=180°
(3)
Rectangular wave
0.06
(2) (4)
(1)
θ
0.04
360°
0.02
0
0
2.8
2.4
2.0
1.6
Sine wave
180°
360°
0.02 0.04 0.06 0.08 0.10 0.12 0.14
Average Forward Current, IO -- A
IFSM -- t
IT03952
[SBD]
Current waveform 50Hz sine wave
IS
20ms
t
1000
5
2
100
5
2
10
5
2
1.0
5
2
0.1
5
2
0.01
0
3
2
10
7
5
3
2
1.0
1.0
1.2
0.8
0.4
0
7 0.01
23
5 7 0.1
23
Time, t -- s
5 7 1.0
23
ID00264
IR -- VR
Ta=125°C
100°C
75°C
50°C
25°C
[SBD]
10 20 30 40 50 60
Reverse Voltage, VR -- V
C -- VR
ID00261
[SBD]
f=1MHz
23
5 7 10
23
57
Reverse Voltage, VR -- V
ID00263
Rev.0 I Page 5 of 6 I www.onsemi.com

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