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GFP8N60 PDF даташит

Спецификация GFP8N60 изготовлена ​​​​«ETC» и имеет функцию, называемую «N-Channel enhancement mode power field effect Transistors».

Детали детали

Номер произв GFP8N60
Описание N-Channel enhancement mode power field effect Transistors
Производители ETC
логотип ETC логотип 

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GFP8N60 Даташит, Описание, Даташиты
GFP8N60
General Description(概述)
These N-Channel enhancement mode power field effect
Transistors are produced using planar stripe, DMOS
technology.
GFP8N60是增强型N沟道功率场效应管,采用平面条形DMOS
工艺生产制造。
This advanced technology has been especially tailored
to minimize on - state resistance , provide superior
switching performance,and Withstand high energy pulse
in the avalanche and commutaion mode .These devices
are well suited for high efficiency switch mode power
supplyelectronic lamp ballasts
based on half bridge topology.
GFP8N60具有低导通电阻、优越的开关特性以及抗雪崩击穿
能力,适合用于高效开关电源、电子镇流器等。
TO-220
1.Gate 2.Drain 3.Source
Absolute Maximum ratings(极参数,除非另定,T=25 ℃ )
Characteristics(参数)
漏源反向击穿电压
连续漏极电流
栅源电压
雪崩能量
耗散功率
储存温度
热阻(结到壳)
正向压降
Symbol(符号)
BVDSS
ID
VGS
EAS
PD
TSTG
RθJC
VSD
Value(额定值)
600
7.5
+ 30
230
147
-55 ~150
0.85
1.4
Units(单位)
V
A
V
mJ
W
/ W
V
Characteristics
参数名称
电压
栅源漏电流
漏源漏电流
导通电阻
输入
输出
传输
导通延迟时间
上升时间
下降延迟时间
下降时间
栅极存储电荷
栅源电荷
栅漏电荷
Symbol
(符号)
VGS(th)
IGSS
IDSS
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
Min.
Typ.
(最小) (型值)
2.0 -
--
--
- 1.0
- 8.7
- 965
- 105
- 12
- 16.5
- 60.5
- 81
- 64.5
- 28
- 4.5
- 12
Page : 1/5
Max.
(最大)
4.0
+100
10
1.2
-
1255
135
16
45
130
170
140
36
-
-
Units
(单位)
V
nA
uA
Ω
S
Test Conditions
(测试)
VDS= VGS,ID=250uA
VGS= +30V, VDS= 0V
VDS=600V ,VGS= 0V
VGS= 10V,ID=3.75A
VDS= 40V, ID=3.75A
pF VGS= 0V, VDS= 25V
F=1.0MHz
ns
VDD= 300V, ID= 7.5A
RG=25 Ω
nC VDS= 480V, VGS= 10V
ID=7.5A









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GFP8N60 Даташит, Описание, Даташиты
101
Top:
VGS
15.0V
10.0V
8.0V
7.0V
6.5V
6.0V
5.5V
Bottom: 5.0V
100
101
150
25
100
-55
Notes
10-1
1.250us Pulse Test
2.Tc=25
10-1
100
101
VDS, Drain-Source Voltage[V]
Figure 1.On-Region Characteristics
10-1
2
Notes:
1.VDS=40V
2. 250us Pulse test
46
8
VGS, Gate-Source Voltage[V]
10
Figure 2.Transfet Characteristics
3.5
3.0
2.5 VGS=10V
2.0
1.5
VGS=20V
1.0
Note:TJ=25
0.5
0 5 10 15 20
ID, Drain Current[A]
Figure 3.On-Resistance Variation vs
Drain Current and Gate Voltage
2000
1800
1600
1400
1200
1000
800
600
400
200
0
10-1
Ciss=Cgs+Cgd(Cgd=shorted)
Coss=Cds+Cgd
Crss=Cgd
Ciss
Coss
Crss
Notes:
1.VGS=0V
2. f=1MHZ
100 101
VDS, Drain-Source Voltage [V]
Figure 5.Capacitance Characteristics
101
100
10-1
0.2
150
25
Notes:
1.VGS=0V
2. 250us Pulse Test
0.4 0.6
0.8 1.0
1.2
VSD, Source-Drain voltage[V]
1.4
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
12
10 VDS=120V
8 VDS=300V
VDS=480V
6
4
2
Note:ID=8A
0
0 5 10 15 20 25 30
QG, Total Gate Charge[nC]
Figure 6. Gate Charge Characteristics
Page : 2/5









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GFP8N60 Даташит, Описание, Даташиты
1.2
1.1
1.0
0.9 Notes:
1.VGS=0V
2. ID=250uA
0.8
-100
-50 0 50 100 150
TJ, J-5u0nctionTemperature []
200
Figure 7. Breakdown Voltage Variation
vs Temperature
102
Operation in This Area
Is Limited by RDS(on)
101
100
10us
100us
1ms
10ms
100ms
DC
10-1
10-2
100
Notes:
1. TC=25
2. TJ=150
3. Single Pulse
101 102
VDS, Drain-Source VoltageWave[V]
103
Figure 9. Maximum Safe Operating Area
100
D=0.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-100
Notes:
1.VGS=10V
2. ID=4A
-50 0 50 100 150
TJ, JunctionTemperature []
200
Figure 8. On-Resistance Variation
vs Temperature
8
6
4
2
0
25
50
75 100 125 150
TC, Case Temperature []
Figure 10. Maximum Drain Current
vs. Case Temperature
0.2
10-1 0.1
0.05
0.02
0.01
10-2 Single pulse
Notes:
1. ZӨ jc(t)=0.85/W Max.
2. Duty Factor,D=t1/t2
3. TJM-TC=PDM*ZӨ JC(t)
PDM
10-5
10-4
10-3
10-2
10-1
10-0
10-1
t1,Square Wave Pulse Duration[sec]
Figure 11. Transient Thermal Response Curve
Page : 3/5










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Номер в каталогеОписаниеПроизводители
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