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NE68039R PDF даташит

Спецификация NE68039R изготовлена ​​​​«CEL» и имеет функцию, называемую «NPN SILICON HIGH FREQUENCY TRANSISTOR».

Детали детали

Номер произв NE68039R
Описание NPN SILICON HIGH FREQUENCY TRANSISTOR
Производители CEL
логотип CEL логотип 

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NE68039R Даташит, Описание, Даташиты
SILICON TRANSISTOR
NE680 SERIES
NPN SILICON HIGH FREQUENCY TRANSISTOR
FEATURES
HIGH GAIN BANDWIDTH PRODUCT: fT = 10 GHz
LOW NOISE FIGURE:
1.7 dB at 2 GHz
2.6 dB at 4 GHz
HIGH ASSOCIATED GAIN:
12.5 dB at 2 GHz
8.0 dB at 4 GHz
EXCELLENT LOW VOLTAGE
LOW CURRENT PERFORMANCE
DESCRIPTION
The NE680 series of NPN epitaxial silicon transistors is
designed for low noise, high gain and low cost applications.
Both the chip and micro-x versions are suitable for applications
up to 6 GHz. The NE680 die is also available in six different low
cost plastic surface mount package styles. The NE680's high
fT makes it ideal for low voltage/low current applications, down
to as low as 0.5 V / 0.5 mA. IC max for the NE680 series is
35 mA. For higher current applications see the NE681 series.
00 (CHIP)
18 (SOT 343 STYLE)
35 (MICRO-X)
19 (3 PIN ULTRA
SUPER MINI MOLD)
NE68018
NOISE FIGURE & ASSOCIATED GAIN
vs. FREQUENCY
6V, 5 m A
3V, 5 mA
25
20
15
2.5 10
2.0 5
1.5
1.0
.5
300 500
1000
2000
3000
Frequency, f (GHz)
30 (SOT 323 STYLE)
33 (SOT 23 STYLE)
39 (SOT 143 STYLE)
39R (SOT 143R STYLE)
California Eastern Laboratories









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NE68039R Даташит, Описание, Даташиты
NE680 SERIES
ELECTRICAL CHARACTERISTICS (TA = 25°C)
SYMBOLS
PART NUMBER
EIAJ1 REGISTERED NUMBER
PACKAGE OUTLINE
PARAMETERS AND CONDITIONS
fT
NF
GNF
MAG
|S21E|2
hFE
ICBO
IEBO
CRE3
PT
RTH (J-A)
RTH (J- C)
Gain Bandwidth Product at VCE = 6 V, IC = 10 mA
Noise Figure at VCE = 6 V, IC = 5 mA, f = 1 GHz
f = 2 GHz
f = 4 GHz
Associated Gain at VCE = 6 V, IC = 5 mA,
f = 1 GHz
f = 2 GHz
f = 4 GHz
Maximum Available Gain at VCE = 6 V, IC = 10 mA
f = 1 GHz
f = 2 GHz
f = 4 GHz
Insertion Power Gain at VCE = 6 V, IC = 10 mA,
f = 1 GHz
f = 2 GHz
f = 4 GHz
Forward Current Gain2 at VCE = 6 V, IC = 10 mA
VCE = 3 V, IC = 5 mA
Collector Cutoff Current at VCB = 10 V, IE = 0 mA
Emitter Cutoff Current at VEB = 1V, IC = 0 mA
Feedback Capacitance at VCB = 1 V, IE = 0 mA, f = 1 MHz
Total Power Dissipation
Thermal Resistance (Junction to Ambient)
Thermal Resistance (Junction to Case)
NE68000
00 (CHIP)
UNITS MIN TYP MAX
NE68018
2SC5013
18
MIN TYP MAX
NE68019
2SC5008
19
MIN TYP MAX
GHz
dB
dB
dB
10
1.7 2.4
2.6
10
1.6
1.8 3
10
1.7
1.9
dB 14 13.5
dB 12.5
10.2
9.6
dB 8
dB 18.5 19 18.5
dB 16.2 12.7 11.8
dB 10.2
8.2
7.3
dB 17
dB 10.5 12.5
dB 7.5
15.5
7.5 9.8
4.6
15
9.2
4.4
50 100 250 50 100 250
80
160
µA 1.0 1.0 1.0
µA 1.0 1.0 1.0
pF
0.3 0.7
0.3 0.7
mW 400 150 100
°C/W
833 1000
°C/W
120
200
200
ELECTRICAL CHARACTERISTICS (TA = 25°C)
SYMBOLS
PART NUMBER
EIAJ1 REGISTERED NUMBER
PACKAGE OUTLINE
PARAMETERS AND CONDITIONS
NE68030
NE68033
NE68035
NE68039/39R
2SC4228
30
2SC3585
33
2SC3587
35
2SC4095
39
UNITS MIN TYP MAX MIN TYP MAX MIN TYP MAX MIN TYP MAX
fT
NF
GNF
MAG
|S21E|2
hFE
ICBO
IEBO
Cre3
PT
RTH (J-A)
RTH (J- C)
Gain Bandwidth Product at VCE = 6 V, IC = 10 mA GHz
10
10
10
10
Noise Figure at VCE = 6 V, IC = 5 mA, f = 1 GHz
f = 2 GHz
f = 4 GHz
dB
dB
dB
1.5
1.7
2.9
1.6
1.8 3.0
2.1
1.7 2.4
2.6
1.7 2.5
2.6
Associated Gain at VCE = 6 V, IC = 5 mA,
f = 1 GHz
f = 2 GHz
f = 4 GHz
dB
dB
dB
12.5
9.4
5.3
11.0
9.0
4.2
12.5
8
11
6.5
Maximum Available Gain at VCE = 6 V, IC = 10 mA
f = 1 GHz
f = 2 GHz
f = 4 GHz
dB
dB
dB
17
10.9
6.8
17
10.9
6.7
18.5
16.2
10.2
18
12.4
8.7
Insertion Power Gain at VCE = 6 V, IC = 10 mA,
f = 1 GHz
f = 2 GHz
f = 2 GHz
dB
dB
dB
13.5
8.5
3.6
13 17
6.7 10.5 12.5
3.7 7.5
14.5
9.6
4.9
Forward Current Gain2 at VCE = 6 V, IC = 10 mA
VCE = 3 V, IC = 5 mA
50 100 250 50 100 250 50 100 250
50 100 250
Collector Cutoff Current at VCB = 10 V, IE = 0 mA µA 1.0 1.0 1.0 1.0
Emitter Cutoff Current at VEB = 1V, IC = 0 mA
µA
1.0
1.0
1.0
1.0
Feedback Capacitance at
VCB = 3V, IE = 0 mA, f = 1 MHz
VCE = 10 V, IE = 0 mA, f = 1 MHz
pF 0.3 0.7
pF
0.3 0.8
0.2 0.7
0.25 0.8
Total Power Dissipation
mW 150 200 290 200
Thermal Resistance (Junction to Ambient)
°C/W
833
620
550
620
Thermal Resistance (Junction to Case)
°C/W
200
200
200
200
Notes:
1. Electronic Industrial Association of Japan.
2. Pulsed measurement, PW350 µs, duty cycle 2%.
3. The emitter terminal should be connected to the ground
terminal of the 3 terminal capacitance bridge.









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NE68039R Даташит, Описание, Даташиты
ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C)
SYMBOLS
PARAMETERS
UNITS RATINGS
VCBO Collector to Base Voltage
V
20
VCEO Collector to Emitter Voltage V
10
VEBO Emitter to Base Voltage
V
1.5
IC Collector Current
mA 35
TJ
TSTG
Junction Temperature
Storage Temperature
°C 1502
°C -65 to +150
Notes:
1. Operation in excess of any one of these parameters may result in
permanent damage.
2. Maximum TJ for the NE68035 is 200°C.
TYPICAL PERFORMANCE CURVES (TA = 25°C)
14
13
12
11
10
9
8
7
6
5
4
3
2
1
NE68035
INSERTION GAIN vs.
COLLECTOR CURRENT
VCE = 6 V
f = 2 GHz
f = 3 GHz
f = 4 GHz
2 3 5 7 10 20 30 50 70 100
Collector Current, IC (mA)
NE68039
FORWARD INSERTION GAIN
AND MAXIMUM AVAILABLE
GAIN vs. FREQUENCY
30
|S21|2
MAG
25
20
15
10
5
0
0.1
0.2 0.3 0.5 0.7 1
23
Frequency, f (GHz)
5 7 10
NE680 SERIES
DC POWER DERATING CURVES
400
300
NE68035
NE68033
NE68039
200
NE68019
100
0
0 50 100 150 200
Ambient Temperature, TA (°C)
NE68033
INSERTION GAIN vs.
COLLECTOR CURRENT
12
VCE = 6 V
f = 2 GHz
10
NE68033
8
6
4
2
0
1
2 3 5 7 10 20 30 50 70 100
Collector Current, IC (mA)
NE68035
FORWARD INSERTION GAIN
AND MAXIMUM AVAILABLE
GAIN vs. FREQUENCY
30
VCE = 6 V
IC = 10 mA
25
20
15
|S21|2
MAG
10
5
0
0.1 0.2 0.3 0.5 0.7 1
23
Frequency, f (GHz)
5 7 10










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