NRVBAF440 PDF даташит
Спецификация NRVBAF440 изготовлена «ON Semiconductor» и имеет функцию, называемую «Surface Mount Schottky Power Rectifier». |
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Детали детали
Номер произв | NRVBAF440 |
Описание | Surface Mount Schottky Power Rectifier |
Производители | ON Semiconductor |
логотип |
5 Pages
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MBRAF440, NRVBAF440
Surface Mount
Schottky Power Rectifier
This device employs the Schottky Barrier principle in a large area
metal−to−silicon power diode. State−of−the−art geometry features
epitaxial construction with oxide passivation and metal overlay
contact. Ideally suited for low voltage, high frequency rectification, or
as free wheeling and polarity protection diodes in surface mount
applications where compact size and weight are critical to the system.
Features
• Low Profile Package for Space Constrained Applications
• Rectangular Package for Automated Handling
• Highly Stable Oxide Passivated Junction
• 150°C Operating Junction Temperature
• Guard−Ring for Stress Protection
• NRV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
• These are Pb−Free and Halide−Free Devices
Mechanical Charactersistics
• Case: Epoxy, Molded, Epoxy Meets UL 94, V−0
• Weight: 95 mg (approximately)
• Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
• Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
• Cathode Polarity Band
• Device Meets MSL 1 Requirements
www.onsemi.com
SCHOTTKY BARRIER
RECTIFIER
4.0 AMPERE
40 VOLTS
SMA−FL
CASE 403AA
STYLE 6
MARKING DIAGRAM
AYWW
RAFG
G
RAF = Specific Device Code
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping†
MBRAF440T3G SMA−FL 5000 / Tape & Reel
(Pb−Free)
NRVBAF440T3G SMA−FL 5000 / Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2015
March, 2015 − Rev. 2
1
Publication Order Number:
MBRAF440T3/D
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MBRAF440, NRVBAF440
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
40
V
Average Rectified Forward Current
(At Rated VR, TL = 107°C)
IO A
4.0
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)
IFSM
100
A
Storage/Operating Case Temperature
Operating Junction Temperature (Note 1)
Voltage Rate of Change
(Rated VR, TJ = 25°C)
Tstg, TC
TJ
dv/dt
−55 to +150
−55 to +150
10,000
°C
°C
V/ms
ESD Rating
Human Body Model
Machine Model
ESDHBM
ESDMM
3B
M4
−
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RqJA.
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance − Junction−to−Lead (Note 2)
Thermal Resistance − Junction−to−Ambient (Note 2)
2. 1 inch square pad size (1 × 0.5 inch) for each lead on FR4 board.
Symbol
RθJL
RθJA
Value
25
90
Unit
°C/W
ELECTRICAL CHARACTERISTICS
Characteristic
Symbol
Value
Unit
Maximum Instantaneous Forward Voltage (Note 3)
(IF = 4.0 A)
VF
TJ = 25°C
TJ = 100°C
V
0.485
0.435
Maximum Instantaneous Reverse Current
IR
TJ = 25°C
TJ = 100°C
mA
(VR = 40 V)
0.3 15
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Pulse Test: Pulse Width ≤ 250 μs, Duty Cycle ≤ 2.0%.
www.onsemi.com
2
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MBRAF440, NRVBAF440
TYPICAL CHARACTERISTICS
10 10
1 TJ = 125°C
0.1
0.10
TJ = 100°C TJ = 25°C TJ = −55°C
0.20 0.30 0.40
0.50
0.60
VF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
Figure 1. Typical Forward Voltage
1
TJ = 125°C
TJ = 100°C
0.1
0.10
TJ = 25°C
TJ = −55°C
0.20 0.30 0.40 0.50 0.60
VF, MAXIMUM INSTANTANEOUS FORWARD
VOLTAGE (VOLTS)
Figure 2. Maximum Forward Voltage
100E−3
10E−3
1E−3
100E−6
10E−6
1E−6
100E−9
10E−9
1E−9
100E−12
0
TJ = 125°C
TJ = 100°C
TJ = 25°C
TJ = −55°C
10 20 30
VR, REVERSE VOLTAGE (VOLTS)
Figure 3. Typical Reverse Current
100E−3
10E−3
1E−3
100E−6
10E−6
TJ = 125°C
TJ = 100°C
TJ = 25°C
TJ = −55°C
1E−6
40 0
10 20 30
VR, REVERSE VOLTAGE (VOLTS)
Figure 4. Maximum Reverse Current
40
1.8
1.6
SQUARE
1.4 WAVE
dc
1.2
1.0
0.8
0.6
0.4
0.2
0
0
Ipk/IO = p
Ipk/IO = 5
Ipk/IO = 10
Ipk/IO = 20
0.5 1 1.5 2 2.5 3 3.5 4 4.5
IO, AVERAGE FORWARD CURRENT (AMPS)
5
Figure 5. Forward Power Dissipation
1000
TJ = 25 °C
100
0
5 10 15 20 25 30 35
VR, REVERSE VOLTAGE (VOLTS)
Figure 6. Capacitance
40
www.onsemi.com
3
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NRVBAF440 | Surface Mount Schottky Power Rectifier | ON Semiconductor |
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