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6N65K-MT PDF даташит

Спецификация 6N65K-MT изготовлена ​​​​«Unisonic Technologies» и имеет функцию, называемую «N-CHANNEL POWER MOSFET».

Детали детали

Номер произв 6N65K-MT
Описание N-CHANNEL POWER MOSFET
Производители Unisonic Technologies
логотип Unisonic Technologies логотип 

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6N65K-MT Даташит, Описание, Даташиты
UNISONIC TECHNOLOGIES CO., LTD
6N65K-MT
6A, 650V N-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC 6N65K-MT is a high voltage power MOSFET
designed to have better characteristics, such as fast switching
time, low gate charge, low on-state resistance and high rugged
avalanche characteristics. This power MOSFET is usually used in
high speed switching applications of switching power supplies and
adaptors.
FEATURES
* RDS(ON) < 1.5@VGS = 10V, ID = 3A
* Fast switching capability
* Avalanche energy tested
* Improved dv/dt capability, high ruggedness
SYMBOL
Power MOSFET
www.unisonic.com.tw
Copyright © 2014 Unisonic Technologies Co., Ltd
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6N65K-MT Даташит, Описание, Даташиты
6N65K-MT
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
6N65KL-TA3-T
6N65KG-TA3-T
6N65KL-TF3-T
6N65KG-TF3-T
6N65KL-TF1-T
6N65KG-TF1-T
6N65KL-TF2-T
6N65KG-TF2-T
6N65KL-TF3-T
6N65KG-TF3-T
6N65KL-TM3-T
6N65KG-TM3-T
6N65KL-TMS-T
6N65KG-TMS-T
6N65KL-TMS2-T
6N65KG-TMS2-T
6N65KL-TMS4-T
6N65KG-TMS4-T
6N65KL-TN3-R
6N65KG-TN3-R
6N65KL-TND-R
6N65KG-TND-R
Note: Pin Assignment: G: Gate D: Drain S: Source
Power MOSFET
Package
TO-220
TO-220F
TO-220F1
TO-220F2
TO-220F3
TO-251
TO-251S
TO-251S2
TO-251S4
TO-252
TO-252D
Pin Assignment
123
GDS
GDS
GDS
GDS
GDS
GDS
GDS
GDS
GDS
GDS
GDS
Packing
Tube
Tube
Tube
Tube
Tube
Tube
Tube
Tube
Tube
Tape Reel
Tape Reel
MARKING
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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6N65K-MT Даташит, Описание, Даташиты
6N65K-MT
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
650
V
Gate-Source Voltage
VGSS
±30
V
Avalanche Current (Note 2)
Continuous Drain Current
IAR 6 A
ID 6 A
Pulsed Drain Current (Note 2)
Avalanche Energy
Single Pulsed (Note 3)
IDM
EAS
24 A
300 mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
4.5
ns
TO-220
125 W
TO-220F/TO-220F1
TO-220F3
40 W
Power Dissipation
TO-220F2
PD
42 W
TO-251/TO-251S
TO-251S2/TO-251S4
55 W
TO-252/TO-252D
Junction Temperature
TJ
+150
°C
Operating Temperature
Storage Temperature
TOPR
TSTG
-55 ~ +150
-55 ~ +150
°C
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by TJ
3. L = 16.6mH, IAS = 6A, VDD = 90V, RG = 25 , Starting TJ = 25°C
4. ISD 6A, di/dt 200A/μs, VDD BVDSS, Starting TJ = 25°C
THERMAL DATA
PARAMETER
TO-220/TO-220F
TO-220F1/TO-220F2
Junction to Ambient
TO-220F3
TO-251/TO-251S
TO-251S2/TO-251S4
TO-252/TO-252D
TO-220
TO-220F/TO-220F1
TO-220F3
Junction to Case
TO-220F2
TO-251/TO-251S
TO-251S2/TO-251S4
TO-252/TO-252D
SYMBOL
θJA
θJC
RATING
62.5
110
1.0
3.2
2.97
2.27
UNIT
°C/W
°C/W
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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Номер в каталогеОписаниеПроизводители
6N65K-MTN-CHANNEL POWER MOSFETUnisonic Technologies
Unisonic Technologies

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