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6N70Z PDF даташит

Спецификация 6N70Z изготовлена ​​​​«Unisonic Technologies» и имеет функцию, называемую «N-CHANNEL POWER MOSFET».

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Номер произв 6N70Z
Описание N-CHANNEL POWER MOSFET
Производители Unisonic Technologies
логотип Unisonic Technologies логотип 

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6N70Z Даташит, Описание, Даташиты
UNISONIC TECHNOLOGIES CO., LTD
6N70Z
Preliminary
6.0A, 700V N-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC 6N70Z is an N-channel mode power MOSFET
using UTC’s advanced technology to provide customers with a
minimum on-state resistance, high switching speed, low gate
charge and low input capacitance.
The UTC 6N70Z is universally applied in high efficiency
switch mode power supply.
FEATURES
* RDS(ON)=1.9@ VGS=10V, ID=3A
* High switching speed
SYMBOL
Power MOSFET
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
6N70ZL-T82-T
6N70ZG-T82-T
6N70ZL-TM3-T
6N70ZG-TM3-T
Note: Pin Assignment: G: Gate D: Drain S: Source
Package
SOT-82
TO-251
Pin Assignment
123
GD S
GD S
Packing
Tube
Tube
www.unisonic.com.tw
Copyright © 2013 Unisonic Technologies Co., Ltd
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6N70Z Даташит, Описание, Даташиты
6N70Z
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS 700 V
Gate-Source Voltage (Note 2)
VGSS ±20 V
Drain Current
Continuous
TC=25°C
TC=100°C
ID
6A
3.8 A
Pulsed
IDM 24 A
Avalanche Current (Note 2)
Avalanche Energy
Single Pulsed (Note 3)
Repetitive (Note 2)
Peak Diode Recovery dv/dt (Note 4)
IAR
EAS
EAR
dv/dt
6A
300 mJ
13 mJ
2.5 V/ns
Power Dissipation
Linear Derarting Factor
SOT-82
TO-251
SOT-82
TO-251
PD
75 W
55 W
0.60 W/°C
0.44 W/°C
Junction Temperature
Storage Temperature
TJ
TSTG
+150
-55~+150
°C
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature
3. L = 30mH, IAS = 6A, VDD = 50V, RG = 27, Starting TJ = 25°C
4. ISD 6A, di/dt 140A/µs, VDD BVDSS, Starting TJ = 25°C
THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case
SOT-82
TO-251
SOT-82
TO-251
SYMBOL
θJA
θJc
RATINGS
62.5
110
1.67
2.27
UNIT
°С/W
°С/W
°С/W
°С/W
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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6N70Z Даташит, Описание, Даташиты
6N70Z
Preliminary
Power MOSFET
ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Drain-Source Leakage Current
Gate-Source Leakage Current
Forward
Reverse
BVDSS
BVDSS/TJ
IDSS
IGSS
ID=250µA, VGS=0V
ID=250µA
VDS=700V
VDS=560V, TC=125°C
VGS=+20V, VDS=0V
VGS=-20V, VDS=0V
700 V
0.79 V/°C
25 µA
250 µA
5 µA
-5 µA
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-State Resistance
VGS(TH)
RDS(ON)
VDS=VGS, ID=250µA, VDS=5V 2.0
4.0
VGS=10V, ID=3A (Note 1)
1.65 1.9
V
DYNAMIC PARAMETERS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
CISS
COSS
CRSS
VGS=0V, VDS=25V,
f=1.0MHz (Note 1, 2)
900 1200
90 115
18 55
pF
pF
pF
SWITCHING PARAMETERS
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall-Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
tD(ON)
tR
tD(OFF)
tF
QG
QGS
QGD
VDD=30V, ID=0.5A, RG=25
VGS=0~10V
VDD=50V, IG=100μA,
ID=1.3A (Note 1, 2)
40 70 ns
65 90 ns
140 165 ns
60 85 ns
26 30 nC
6.9 nC
6.4 nC
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
Maximum Body-Diode Pulsed Current
(Note 3)
IS Integral reverse pn-diode in
ISM the MOSFET
6A
24 A
Drain-Source Diode Forward Voltage
(Note 2)
VSD IS=6A, VGS=0V, TJ = 25°C
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
trr IF=6A, dIF/dt=100A/µs,
QRR TJ = 25°C
Notes: 1. Pulse Test: Pulse width 250µs, Duty cycle 2%
2. Essentially independent of operating temperature
3. Repetitive Rating: Pulse width limited by maximum junction temperature
1.4 V
440 ns
4.05 µC
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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