8N65K-MT PDF даташит
Спецификация 8N65K-MT изготовлена «Unisonic Technologies» и имеет функцию, называемую «N-CHANNEL POWER MOSFET». |
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Детали детали
Номер произв | 8N65K-MT |
Описание | N-CHANNEL POWER MOSFET |
Производители | Unisonic Technologies |
логотип |
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UNISONIC TECHNOLOGIES CO., LTD
8N65K-MT
Preliminary
8A, 650V N-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC 8N65K-MT is a high voltage and high current power
MOSFET designed to have better characteristics, such as fast
switching time, low gate charge, low on-state resistance and high
rugged avalanche characteristics. This power MOSFET is usually
used in high speed switching applications at power supplies, PWM
motor controls, high efficient DC to DC converters and bridge
circuits.
FEATURES
* RDS(ON) < 1.3 Ω @ VGS = 10 V, ID = 4 A
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability, high ruggedness
SYMBOL
Power MOSFET
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
8N65KL-TF1-T
8N65KG-TF1-T
8N65KL-TF2-T
8N65KG-TF2-T
Note: Pin Assignment: G: Gate D: Drain S: Source
Package
TO-220F1
TO-220F2
Pin Assignment
123
GDS
GDS
Packing
Tube
Tube
8N65KL-TF1-T
(1)Packing Type
(2)Package Type
(3)Green Package
(1) T: Tube
(2) TF1: TO-220F1, TF2: TO-220F2
(3) L: Lead Free, G: Halogen Free and Lead Free
MARKING
www.unisonic.com.tw
Copyright © 2014 Unisonic Technologies Co., Ltd
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8N65K-MT
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
Gate-Source Voltage
VDSS 650 V
VGSS ±30 V
Drain Current
Continuous
Pulsed (Note 2)
ID
IDM
8A
32 A
Avalanche Energy
Single Pulsed (Note 3)
Peak Diode Recovery dv/dt (Note 4)
EAS
dv/dt
350 mJ
4.5 V/ns
Power Dissipation
Junction Temperature
PD 48 W
TJ
+150
°C
Operating Temperature
Storage Temperature
TOPR
TSTG
-55 ~ +150
-55 ~ +150
°C
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by TJ
3. L=10.93mH, IAS=8A, VDD= 50V, RG=25Ω, Starting TJ=25°C
4. ISD ≤8A, di/dt ≤200A/μs, VDD ≤BVDSS, Starting TJ=25°C
THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case
SYMBOL
θJA
θJC
RATING
62.5
2.6
UNIT
°C/W
°C/W
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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8N65K-MT
Preliminary
Power MOSFET
ELECTRICAL CHARACTERISTICS (TC =25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS VGS = 0 V, ID = 250 μA
650
V
Drain-Source Leakage Current
IDSS VDS = 650 V, VGS = 0 V
10 µA
Gate-Source Leakage Current
Forward
Reverse
IGSS
VGS = 30 V, VDS = 0 V
VGS = -30 V, VDS = 0 V
Breakdown Voltage Temperature Coefficient △BVDSS/△TJ ID =250μA,Referenced to 25°C
100 nA
-100 nA
0.7 V/°C
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-State Resistance
VGS(TH)
RDS(ON)
VDS = VGS, ID = 250 μA
VGS = 10 V, ID = 4A
3.0 5.0 V
0.9 1.3 Ω
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
CISS
COSS
CRSS
VDS = 25 V, VGS = 0V,
f = 1MHz
800 1000 pF
110 130 pF
7 15 pF
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
tD(ON)
tR
tD(OFF)
tF
QG
QGS
QGD
VDD = 30V, ID =0.5A,
RG = 25Ω
(Note 1, 2)
VDS= 50V, ID=1.3A,
VGS= 10 V (Note 1, 2)
57 70
62 90
150 170
70 90
26 45
7.5
6
ns
ns
ns
ns
nC
nC
nC
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Drain-Source Diode Forward Voltage
VSD VGS = 0 V, IS =8A
Maximum Continuous Drain-Source Diode
Forward Current
IS
1.4 V
8A
Maximum Pulsed Drain-Source Diode
Forward Current
ISM
Notes: 1. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2%
2. Essentially independent of operating temperature
32 A
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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Номер в каталоге | Описание | Производители |
8N65K-MT | N-CHANNEL POWER MOSFET | Unisonic Technologies |
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