WFP85N06 PDF даташит
Спецификация WFP85N06 изготовлена «Wisdom technologies» и имеет функцию, называемую «N-Channel MOSFET». |
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Детали детали
Номер произв | WFP85N06 |
Описание | N-Channel MOSFET |
Производители | Wisdom technologies |
логотип |
7 Pages
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Wisdom Semiconductor
WFP85N06
N-Channel MOSFET
Features
■ RDS(on) (Max 0.013 Ω )@VGS=10V
■ Gate Charge (Typical 70nC)
■ Improved dv/dt Capability, High Ruggedness
■ 100% Avalanche Tested
■ Maximum Junction Temperature Range (175°C)
General Description
This Power MOSFET is produced using Wisdom’s advanced
planar stripe, DMOS technology. This latest technology has been
especially designed to minimize on-state resistance, have a high
rugged avalanche characteristics. These devices are well suited
for high efficiency switch mode power supplies, active power factor
correction, electronic lamp ballasts based on half bridge topology.
Symbol
1. Gate{
{ 2. Drain
●
◀▲
●
●
{ 3. Source
TO-220
123
Absolute Maximum Ratings
Symbol
VDSS
ID
IDM
VGS
EAS
EAR
dv/dt
PD
TSTG, TJ
TL
Parameter
Drain to Source Voltage
Continuous Drain Current(@TC = 25°C)
Continuous Drain Current(@TC = 100°C)
Drain Current Pulsed
Gate to Source Voltage
Single Pulsed Avalanche Energy
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation(@TC = 25 °C)
Derating Factor above 25 °C
Operating Junction Temperature & Storage Temperature
Maximum Lead Temperature for soldering purpose,
1/8 from Case for 5 seconds.
Thermal Characteristics
Symbol
RθJC
RθCS
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case to Sink
Thermal Resistance, Junction-to-Ambient
Min.
-
-
-
(Note 1)
(Note 2)
(Note 1)
(Note 3)
Value
60
85
60
340
±20
929
17.6
7.0
176
1.17
- 55 ~ 175
300
Value
Typ.
-
0.5
-
Max.
0.85
-
62.5
Units
V
A
A
A
V
mJ
mJ
V/ns
W
W/°C
°C
°C
Units
°C/W
°C/W
°C/W
Copyright@Wisdom Semiconductor Inc., All rights reserved.
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WFP85N06
Electrical Characteristics ( TC = 25 °C unless otherwise noted )
Symbol
Parameter
Off Characteristics
BVDSS Drain-Source Breakdown Voltage
Δ BVDSS/ Breakdown Voltage Temperature
Δ TJ coefficient
IDSS Drain-Source Leakage Current
IGSS
Gate-Source Leakage, Forward
Gate-source Leakage, Reverse
On Characteristics
VGS(th) Gate Threshold Voltage
RDS(ON)
Static Drain-Source On-state Resis-
tance
Dynamic Characteristics
Ciss Input Capacitance
Coss
Crss
Output Capacitance
Reverse Transfer Capacitance
Dynamic Characteristics
td(on)
tr
td(off)
tf
Qg
Qgs
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Qgd Gate-Drain Charge(Miller Charge)
Test Conditions
VGS = 0V, ID = 250uA
ID = 250uA, referenced to 25 °C
VDS = 60V, VGS = 0V
VDS = 48V, TC = 125 °C
VGS = 20V, VDS = 0V
VGS = -20V, VDS = 0V
VDS = VGS, ID = 250uA
VGS =10 V, ID = 42.5A
VGS =0 V, VDS =25V, f = 1MHz
VDD =30V, ID =42.5A, RG =25Ω
(Note 4, 5)
VDS =48V, VGS =10V, ID =85A
(Note 4, 5)
Min
60
-
-
-
-
-
2.0
-
-
-
-
-
-
-
-
-
-
-
Typ Max Units
-
0.07
-
-
-
-
-
-
10
100
100
-100
V
V/°C
uA
uA
nA
nA
- 4.0
10.5
13
V
mΩ
2500
900
160
-
-
-
40 -
200 -
150 -
150 -
70 -
20 -
30 -
pF
ns
nC
Source-Drain Diode Ratings and Characteristics
Symbol
IS
ISM
VSD
trr
Qrr
Parameter
Continuous Source Current
Pulsed Source Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Test Conditions
Integral Reverse p-n Junction
Diode in the MOSFET
IS =85A, VGS =0V
IS=85A, VGS=0V, dIF/dt=100A/us
※ NOTES
1. Repeativity rating : pulse width limited by junction temperature
2. L = 150uH, IAS =85A, VDD = 25V, RG = 25Ω , Starting TJ = 25°C
3. ISD ≤ 85A, di/dt ≤ 300A/us, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse Width ≤ 300us, Duty Cycle ≤ 2%
5. Essentially independent of operating temperature.
Min.
-
-
-
-
-
Typ.
-
-
-
70
130
Max.
85
340
1.5
-
-
Unit.
A
V
ns
uC
Copyright@Wisdom Semiconductor Inc., All rights reserved.
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Typical Characteristics
Top : 15.V0GVS
10.0 V
8.0 V
102 7.0 V
6.0 V
5.5 V
5.0 V
Bottom: 4.5 V
101
100
10-1
※Notes :
1. 250μs Pulse Test
2. TC = 25℃
100
VDS, Drain-Source Voltage [V]
101
Figure 1. On-Region Characteristics
0.020
0.015
0.010
VGS = 10V
VGS = 20V
0.005
0.000
0
※ Note : TJ = 25℃
50 100 150 200 250 300 350
ID, Drain Current [A]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
6000
4000
2000
Coss
Ciss
Crss
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
※ Notes :
1. VGS = 0 V
2. f = 1 MHz
0
10-1 100 101
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
102
101
175℃
25℃
-55℃
※Notes :
1.
2.
V25DS0μ=s30PVulse
Test
100
2 4 6 8 10
VGS, Gate-Source Voltage [V]
Figure 2. Transfer Characteristics
102
101
100
0.2
175℃
25℃
※Notes :
1.
2.
V25G0Sμ=s0VPulse
Test
0.4 0.6 0.8 1.0 1.2 1.4 1.6
VSD, Source-Drain voltage [V]
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
12
10 VDS = 30V
8 VDS = 48V
6
4
2
※ Note : ID = 85A
0
0 20 40 60 80
QG, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
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WFP85N06 | N-Channel MOSFET | Wisdom technologies |
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