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WFW28N60 PDF даташит

Спецификация WFW28N60 изготовлена ​​​​«Wisdom technologies» и имеет функцию, называемую «N-Channel MOSFET».

Детали детали

Номер произв WFW28N60
Описание N-Channel MOSFET
Производители Wisdom technologies
логотип Wisdom technologies логотип 

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WFW28N60 Даташит, Описание, Даташиты
PROVISIONAL
Wisdom Semiconductor
WFW28N60
Features
RDS(on) (Max 0.22 )@VGS=10V
Gate Charge (Typical 120nC)
Improved dv/dt Capability, High Ruggedness
100% Avalanche Tested
Maximum Junction Temperature Range (150°C)
General Description
This Power MOSFET is produced using Wisdom’s advanced
planar stripe, DMOS technology. This latest technology has been
especially designed to minimize on-state resistance, have a high
rugged avalanche characteristics. These devices are well suited
for high efficiency switch mode power supplies.
N-Channel MOSFET
Symbol
1. Gate{
TO-247
{ 2. Drain
◀▲
{ 3. Source
G DS
Absolute Maximum Ratings
Symbol
VDSS
ID
IDM
VGS
EAS
EAR
dv/dt
PD
TSTG, TJ
TL
Parameter
Drain to Source Voltage
Continuous Drain Current(@TC = 25°C)
Continuous Drain Current(@TC = 100°C)
Drain Current Pulsed
Gate to Source Voltage
Single Pulsed Avalanche Energy
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation(@TC = 25 °C)
Derating Factor above 25 °C
Operating Junction Temperature & Storage Temperature
Maximum Lead Temperature for soldering purpose,
1/8 from Case for 5 seconds.
Thermal Characteristics
Symbol
RθJC
RθCS
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case to Sink
Thermal Resistance, Junction-to-Ambient
Min.
-
-
-
(Note 1)
(Note 2)
(Note 1)
(Note 3)
Value
600
28.0
17.0
112.0
±30
1922
34.7
4.5
347
2.86
- 55 ~ 150
300
Value
Typ.
-
0.24
-
Max.
0.36
-
40
Units
V
A
A
A
V
mJ
mJ
V/ns
W
W/°C
°C
°C
Units
°C/W
°C/W
°C/W
Copyright@Wisdom Semiconductor Inc., All rights reserved.









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WFW28N60 Даташит, Описание, Даташиты
WFW28N60
Electrical Characteristics ( TC = 25 °C unless otherwise noted )
Symbol
Parameter
Off Characteristics
BVDSS Drain-Source Breakdown Voltage
Δ BVDSS/ Breakdown Voltage Temperature
Δ TJ coefficient
IDSS Drain-Source Leakage Current
IGSS
Gate-Source Leakage, Forward
Gate-source Leakage, Reverse
On Characteristics
Test Conditions
VGS = 0V, ID = 250uA
ID = 250uA, referenced to 25 °C
VDS = 600V, VGS = 0V
VDS = 480V, TC = 125 °C
VGS = 30V, VDS = 0V
VGS = -30V, VDS = 0V
VGS(th) Gate Threshold Voltage
RDS(ON)
Static Drain-Source On-state Resis-
tance
Dynamic Characteristics
VDS = VGS, ID = 250uA
VGS =10 V, ID = 14.0A
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Dynamic Characteristics
td(on)
tr
td(off)
tf
Qg
Qgs
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Qgd Gate-Drain Charge(Miller Charge)
VGS =0 V, VDS =25V, f = 1MHz
VDD =300V, ID =28.0A, RG =25
(Note 4, 5)
VDS =480V, VGS =10V, ID =28.0A
(Note 4, 5)
Min
600
-
-
-
-
-
2.0
-
-
-
-
-
-
-
-
-
-
-
Typ Max Units
--V
0.6 - V/°C
- 10 uA
- 100 uA
- 100 nA
-
-100
nA
- 4.0
0.18 0.22
V
4200
550
55
-
-
-
120 -
300 -
220 -
200 -
120 -
25 -
50 -
pF
ns
nC
Source-Drain Diode Ratings and Characteristics
Symbol
Parameter
Test Conditions
IS
Continuous Source Current
Integral Reverse p-n Junction
ISM
Pulsed Source Current
Diode in the MOSFET
VSD
Diode Forward Voltage
IS =28.0A, VGS =0V
trr Reverse Recovery Time
Qrr
Reverse Recovery Charge
IS=28.0A,VGS=0V, dIF/dt=100A/us
NOTES
1. Repeativity rating : pulse width limited by junction temperature
2. L = 4.5mH, IAS =28.0A, VDD = 50V, RG = 25, Starting TJ = 25°C
3. ISD 28.0A, di/dt 200A/us, VDD BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse Width 300us, Duty Cycle 2%
5. Essentially independent of operating temperature.
Min.
-
-
-
-
-
Typ.
-
-
-
500
600
Max.
28.0
112.0
1.4
-
-
Unit.
A
V
ns
nC
Copyright@Wisdom Semiconductor Inc., All rights reserved.










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Номер в каталогеОписаниеПроизводители
WFW28N60N-Channel MOSFETWisdom technologies
Wisdom technologies

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