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CHA2110-98F PDF даташит

Спецификация CHA2110-98F изготовлена ​​​​«United Monolithic Semiconductors» и имеет функцию, называемую «7-12GHz LNA».

Детали детали

Номер произв CHA2110-98F
Описание 7-12GHz LNA
Производители United Monolithic Semiconductors
логотип United Monolithic Semiconductors логотип 

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CHA2110-98F Даташит, Описание, Даташиты
CHA2110-98F
7-12GHz LNA
GaAs Monolithic Microwave IC
Description
The CHA2110-98F is a monolithic two-stages
wide band low noise amplifier circuit. It is
self-biased.
It is designed for military, space and
telecommunication systems.
VD1 VD2
The circuit is manufactured with a pHEMT
process, 0.25µm gate length, via holes
through the substrate, and air bridges.
IN
It is available in chip form.
OUT
Main Features
Broadband performances: 7-12GHz
Linear gain: 19dB
Return Losses: 12dB
Noise Figure: 1.2dB
Output power @ 1dBcomp: 11dBm
DC bias: Vd=4 Volt@Id=45mA
Chip size 1.93x1.3x0.1mm
25 5.0
24 4.5
23 4.0
22 3.5
21
20 S21
3.0
2.5
19 2.0
18 1.5
17 NF 1.0
16 0.5
15 0.0
7.0 7.5 8.0 8.5 9.0 9.5 10.0 10.5 11.0 11.5 12.0
Frequency (GHz)
Gain and NF versus frequency
Main Electrical Characteristics
Tamb.= +25°C
Symbol
Parameter
Freq Frequency range
Gain Linear Gain
NF Noise Figure
Pout Output Power @1dB comp (f=10GHz)
Min Typ Max Unit
7 12 GHz
19 dB
1.2 dB
11 dBm
Ref. : DSCHA21102181 - 29 Jun 12
1/10 Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Bat. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34









No Preview Available !

CHA2110-98F Даташит, Описание, Даташиты
CHA2110-98F
Electrical Characteristics
Tamb.= +25°C
Symbol
Parameter
Min
Freq Frequency range
7
Gain Linear Gain
NF Noise Figure
RL_in Input return losses
RL_out Output return losses
P1dB
IP3
Output power at 1dB comp (f=10GHz)
3rd order interception point (f=10GHz)
Vd Drain supply voltage (self biased)
Id Drain supply current
These values are representative of measurements on test fixture.
7-12GHz LNA
Typ Max Unit
12 GHz
19 dB
1.2 dB
-12 dB
-12 dB
11 dBm
21 dB
4V
45 mA
Absolute Maximum Ratings (1)
Tamb.= +25°C
Symbol
Parameter
Values
Unit
Vd Drain bias voltage
5V V
Id Drain bias current
70 mA
Tj Junction temperature
175 °C
Ta Operating temperature range
-40 to +85
°C
Tstg Storage temperature range
-55 to +150
°C
(1) Operation of this device above anyone of these parameters may cause permanent
damage.
(2) Duration < 1s.
Typical Bias Conditions
Tamb.= +25°C
Symbol
Pad No
Vd VD1, VD2
The circuit is self-biased.
Parameter
Drain supply voltage
Values
4
Unit
V
Ref. : DSCHA21102181 - 29 Jun 12
2/10 Specifications subject to change without notice
Bat. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34









No Preview Available !

CHA2110-98F Даташит, Описание, Даташиты
7-12GHz LNA
Test fixture Measurements
T=[-40°C ; +25°C ; +85°C], Vd = +4V, Id = 45mA
S21 versus frequency
CHA2110-98F
Input return loss
+85°C
-40°C
+25°C
-40°C
+25°C
+85°C
Output Return loss
-40°C
+25°C
+85°C
Ref. : DSCHA21102181 - 29 Jun 12
3/10 Specifications subject to change without notice
Bat. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34










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Номер в каталогеОписаниеПроизводители
CHA2110-98F7-12GHz LNAUnited Monolithic Semiconductors
United Monolithic Semiconductors

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