CHA3801-99F PDF даташит
Спецификация CHA3801-99F изготовлена «United Monolithic Semiconductors» и имеет функцию, называемую «L-Band Low Noise Amplifier». |
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Детали детали
Номер произв | CHA3801-99F |
Описание | L-Band Low Noise Amplifier |
Производители | United Monolithic Semiconductors |
логотип |
10 Pages
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CHA3801-99F
RoHS COMPLIANT
L-Band Low Noise Amplifier
GaAs Monolithic Microwave IC
Description
The CHA3801-99F is an L-Band LNA
monolithic circuit including an active bias
network. Furthermore a protection network is
included in order to allow high input power
survivability.
The circuit is dedicated to space applications,
and also well suited for a range of microwave
applications and systems.
The circuit is manufactured with a pHEMT
process, 0.25µm gate length, via holes
through the substrate, air bridges and
electron beam gate lithography.
It is available in chip form.
Main Features
■ L-Band performances: 1-2GHz
■ 1.45dB Noise Figure
■ 28dB Linear Gain
■ 17dBm Saturated Power
■ 27dBm Output Third Order Intercept
■ DC bias: Vd = 5Volt @ 70mA
■ Chip size 1.6x1.4x0.1mm
Typical Noise Figure
Main Characteristics
Tamb.= +25°C
Symbol
Parameter
Freq Frequency range
Gain Linear Gain
NF Noise Figure
Pout Output Power @1dB comp.
Min Typ Max Unit
1 2 GHz
28 dB
1.45 dB
15 dBm
Ref. : DSCHA38012328 - 23 Nov 12
1/10 Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - BP46 - 91401 Orsay Cedex France
Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09
No Preview Available ! |
CHA3801-99F
L-Band Low Noise Amplifier
Main Characteristics
Tamb.= +25°C
Symbol
Parameter
Min
FRF RF input frequency Range
G (1)
Gain
- Gain flatness (1)
1
|S11| Input Return Loss
|S22| Output Return Loss
NF ** Noise Figure
|S12| Reverse Isolation
OIP3 ** Output Third order Intercept Point
OP1dB ** Output 1dB Compression Point
Id_1a Total drain current (mode 1a)
Id_1b Total drain current (mode 1b)
Id_1c Total drain current (mode 1c)
Vd Drain Voltage
(1) Under working mode 1a and input protection disabled
Typ
28
0.5
-15
-15
1.45
40
27
15
70
90
50
5
Max Unit
2 GHz
dB
dBp-p
dB
dB
dB
dB
dBm
dBm
mA
mA
mA
V
These values are representative of on-wafer measurements that are made without bonding
wires at the RF ports.
A bonding wire of typically 0.1 to 0.15nH will improve the matching at the accesses.
Working Modes
Mode
Description
1a Nominal bias current (70mA)
1b High bias current (+30%)
1c Low bias current (-30%)
* not connected
Input protection state
enabled
disabled
PAD #3
PAD #6
-5V
n.c.*
-5V
PAD #4
PAD #7
n.c.*
-5V
-5V
PAD #5
PAD #8
n.c. *
n.c. *
n.c. *
PAD #9
PAD #10
+5V
+5V
+5V
PAD #2
GND
-5V
Ref. : DSCHA38012328 - 23 Nov 12
2/10
Route Départementale 128, BP46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09
Specifications subject to change without notice
No Preview Available ! |
L-Band Low Noise Amplifier
CHA3801-99F
Absolute Maximum Ratings (1)
Tamb.= +25°C
Symbol
Parameter
Values
Unit
Vd Drain bias voltage (Vg=-5V)
6.5 V
Vctrl Control voltage
-6 to 0
V
Vg Gate bias voltage (Vd=+5V)
-6 to 0
V
Pin Protection switch enabled
+20 dBm
Pin Protection switch disabled
+6 dBm
Tj Junction temperature
175 °C
Ta Operating temperature range
-40 to +85
°C
Tstg Storage temperature range
-55 to +150
°C
(1) Operation of this device above anyone of these parameters may cause permanent
damage.
Ref. : DSCHA38012328 - 23 Nov 12
3/10
Route Départementale 128, BP46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09
Specifications subject to change without notice
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Номер в каталоге | Описание | Производители |
CHA3801-99F | L-Band Low Noise Amplifier | United Monolithic Semiconductors |
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