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CHA5350-99F PDF даташит

Спецификация CHA5350-99F изготовлена ​​​​«United Monolithic Semiconductors» и имеет функцию, называемую «17-24GHz Medium Power Amplifier».

Детали детали

Номер произв CHA5350-99F
Описание 17-24GHz Medium Power Amplifier
Производители United Monolithic Semiconductors
логотип United Monolithic Semiconductors логотип 

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CHA5350-99F Даташит, Описание, Даташиты
CHA5350-99F
17-24GHz Medium Power Amplifier
GaAs Monolithic Microwave IC
Description
The CHA5350-99F is a four stage monolithic
MPA that typically provides an output power
of 26.5dBm at 1dB gain compression
associated to a high IP3 output of 34dBm.
It is designed for a wide range of
applications, from professional to commercial
communication systems.
The circuit is manufactured with a pHEMT
process, 0.15µm gate length, via holes
through the substrate, air bridges and
electron beam gate lithography.
It is available in chip form.
In
Vd1 Vd2,3 Vd4
STG1 STG2 STG3 STG4
Vg
Main Features
Broadband performances: 17-24GHz
Linear gain = 26dB
Pout = 26.5dBm @ 1dB comp.
High OIP3 = 34dBm
DC bias: Vd=6Volt @ Id=300mA
Chip size 2.38x1.46x0.07mm
Pout +IP3
Out
Main Electrical Characteristics
Tamb.= +25°C
Symbol
Parameter
Freq Frequency range
Gain Linear Gain
P-1dB
OIP3
Output Power @1dB gain compression
Output third order interception point
Min Typ Max Unit
17 24 GHz
26 dB
26.5 dBm
34 dBm
Ref. : DSCHA53503018 - 18 Jan 13
1/12 Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34









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CHA5350-99F Даташит, Описание, Даташиты
CHA5350-99F
17-24GHz Medium Power Amplifier
Electrical Characteristics
Tamb.= +25°C, Vd1,2,3,4 = +6V, Idq = 300mA
Symbol
Freq
Gain
Gain_T
RLin
RLout
P-1dB
Psat
PAE_ P-1dB
Id_ P-1dB
Id_ Psat
OIP3
Vd1,2,3,4
Id
Vg
Parameter
Frequency range
Linear Gain
Linear gain variation versus temperature
Input Return Loss
Output Return Loss
Output Power @1dB gain compression
Saturated output power
Power added efficiency @1dB gain comp.
Drain current @1dB gain compression
Drain current @ saturation
Output third order interception point on the
frequency range 17-21 GHz
Output third order interception point on the
frequency range 21-24 GHz
Drain supply voltage
Drain quiescent current
Gate supply voltage
Min Typ Max Unit
17 24 GHz
26 dB
-0.035
dB/°C
-17 dB
-12 dBm
26.5 dBm
27 dBm
25 %
350 mA
400 mA
35.5 dBm
34 dBm
6V
300 mA
-0.7 V
These values are representative of measurements in test fixture that are made with bonding
wires at the RF ports.
Wire bonding at RF accesses: 0.3nH, typically.
Ref. : DSCHA53503018 - 18 Jan 13
2/12 Specifications subject to change without notice
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34









No Preview Available !

CHA5350-99F Даташит, Описание, Даташиты
17-24GHz Medium Power Amplifier
CHA5350-99F
Absolute Maximum Ratings (1)
Tamb.= +25°C
Symbol
Parameter
Values
Unit
Vd1,2,3,4
Id
Drain bias voltage
Drain bias current (1)
8V V
650 mA
Vg Gate bias voltage
Pin Maximum peak input power overdrive (2)
-2 to -0.3
+15
V
dBm
Tj Junction temperature
175 °C
Ta Operating temperature range
-40 to +85
°C
Tstg Storage temperature range
-55 to +150
°C
(1) Operation of this device above anyone of these parameters may cause permanent
damage.
(2) Duration < 1s.
Typical Bias Conditions
Tamb.= +25°C
Symbol Pad No
Parameter
Vg 10 DC gate Voltage
Vd1,2,3,4
Id
3, 5, 7
DC drain Voltage
DC Drain current controlled with Vg (1)
(1) To be adjusted in order to achieve Id: 300mA
Values
-0.7
6
300
Unit
V
V
mA
Ref. : DSCHA53503018 - 18 Jan 13
3/12 Specifications subject to change without notice
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34










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Номер в каталогеОписаниеПроизводители
CHA5350-99F17-24GHz Medium Power AmplifierUnited Monolithic Semiconductors
United Monolithic Semiconductors

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