DataSheet26.com

NCP45526 PDF даташит

Спецификация NCP45526 изготовлена ​​​​«ON Semiconductor» и имеет функцию, называемую «Advanced Load Management».

Детали детали

Номер произв NCP45526
Описание Advanced Load Management
Производители ON Semiconductor
логотип ON Semiconductor логотип 

9 Pages
scroll

No Preview Available !

NCP45526 Даташит, Описание, Даташиты
NCP45526
ecoSWITCHt
Advanced Load Management
Controlled Load Switch with Low RON
The NCP45526 load switch provides a component and
area-reducing solution for efficient power domain switching with
inrush current limit via soft start. This device is designed to integrate
control and driver functionality with a high performance low
on−resistance power MOSFET in a single package. This cost effective
solution is ideal for power management and hot-swap applications
requiring low power consumption in a small footprint.
Features
Advanced Controller with Charge Pump
Integrated N-Channel MOSFET with Low RON
Input Voltage Range 0.5 V to 6 V
Soft-Start via Controlled Slew Rate
Power Good Signal
Extremely Low Standby Current
Load Bleed (Quick Discharge)
This is a Pb−Free Device
Typical Applications
Portable Electronics and Systems
Notebook and Tablet Computers
Telecom, Networking, Medical, and Industrial Equipment
Set−Top Boxes, Servers, and Gateways
Hot−Swap Devices and Peripheral Ports
VCC
EN PG
VIN
Bandgap
&
Biases
Control
Logic
Charge
Pump
Delay and
Slew Rate
Control
GND
BLEED
Figure 1. Block Diagram
VOUT
http://onsemi.com
RON TYP
18.0 mW
18.8 mW
VCC
3.3 V
3.3 V
VIN
1.8 V
5.0 V
IMAX
6A
1
DFN8, 2x2
CASE 506CC
MARKING DIAGRAM
1
XX MG
G
XX = 4H for NCP45526−H
= 4L for NCP45526−L
M = Date Code
G = Pb−Free Package
(Note: Microdot may be in either location)
PIN CONFIGURATION
VIN 1
EN 2
VCC 3
GND 4
9: VIN
(Top View)
8 VOUT
7 VOUT
6 PG
5 BLEED
ORDERING INFORMATION
See detailed ordering and shipping information on page 9 of
this data sheet.
© Semiconductor Components Industries, LLC, 2014
September, 2014 − Rev. 2
1
Publication Order Number:
NCP45526/D









No Preview Available !

NCP45526 Даташит, Описание, Даташиты
NCP45526
Table 1. PIN DESCRIPTION
Pin Name
1, 9 VIN
2 EN
3 VCC
4 GND
5 BLEED
6 PG
7, 8 VOUT
Function
Drain of MOSFET (0.5 V – 6.0 V), Pin 1 must be connected to Pin 9
NCP45526−H − Active−high digital input used to turn on the MOSFET, pin has an internal
pull down resistor to GND
NCP45526−L − Active−low digital input used to turn on the MOSFET, pin has an internal pull
up resistor to VCC
Supply voltage to controller (3.0 V − 5.5 V)
Controller ground
Load bleed connection; must be tied to VOUT either directly or through a resistor 100 MW.
NCP45526 − Active−high, open−drain output that indicates when the gate of the MOSFET is
fully charged, external pull up resistor 1 kW to an external voltage source required; tie to
GND if not used
Source of MOSFET connected to load
Table 2. ABSOLUTE MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Supply Voltage Range
Input Voltage Range
Output Voltage Range
EN Digital Input Range
PG Output Voltage Range (Note 1)
Thermal Resistance, Junction−to−Ambient, Steady State (Note 2)
Thermal Resistance, Junction−to−Ambient, Steady State (Note 3)
Thermal Resistance, Junction−to−Case (VIN Paddle)
Continuous MOSFET Current @ TA = 25°C
Total Power Dissipation @ TA = 25°C (Notes 2 and 4)
Derate above TA = 25°C
VCC
VIN
VOUT
VEN
VPG
RθJA
RθJA
RθJC
IMAX
PD
−0.3 to 6
−0.3 to 6
−0.3 to 6
−0.3 to (VCC + 0.3)
−0.3 to 6
40.0
72.7
5.3
6.0
2.50
24.9
V
V
V
V
V
°C/W
°C/W
°C/W
A
W
mW/°C
Total Power Dissipation @ TA = 25°C (Notes 3 and 4)
Derate above TA = 25°C
PD 1.37 W
13.8 mW/°C
Storage Temperature Range
Lead Temperature, Soldering (10 sec.)
ESD Capability, Human Body Model (Notes 5 and 6)
ESD Capability, Machine Model (Note 5)
ESD Capability, Charged Device Model (Note 5)
Latch−up Current Immunity (Notes 5 and 6)
TSTG
TSLD
ESDHBM
ESDMM
ESDCDM
LU
−40 to 150
260
3.0
200
1.0
100
°C
°C
kV
V
kV
mA
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. PG is an open−drain output that requires an external pull up resistor 1 kW to an external voltage source.
2. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.
3. Surface−mounted on FR4 board using the minimum recommended pad size, 1 oz Cu.
4. Specified for derating purposes only, ensure that IMAX is never exceeded.
5. Tested by the following methods @ TA = 25°C:
ESD Human Body Model tested per JESD22−A114
ESD Machine Model tested per JESD22−A115
ESD Charged Device Model tested per JESD22−C101
Latch−up Current tested per JESD78
6. Rating is for all pins except for VIN and VOUT which are tied to the internal MOSFET’s Drain and Source. Typical MOSFET ESD performance
for VIN and VOUT should be expected and these devices should be treated as ESD sensitive.
http://onsemi.com
2









No Preview Available !

NCP45526 Даташит, Описание, Даташиты
NCP45526
Table 3. OPERATING RANGES
Rating
Supply Voltage
Input Voltage
Ground
Ambient Temperature
Junction Temperature
Symbol
VCC
VIN
GND
TA
TJ
Min
3
0.5
−40
−40
Max Unit
5.5 V
6V
0V
85 °C
125 °C
Table 4. ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Conditions (Note 7)
Symbol Min Typ Max Unit
MOSFET
On−Resistance
VCC = 3.3 V; VIN = 1.8 V
RON
18.0 24.0
mW
VCC = 3.3 V; VIN = 5 V
18.8 25.0
Leakage Current (Note 8)
CONTROLLER
VEN = 0 V; VIN = 6 V
ILEAK
0.1 1 mA
Supply Standby Current (Note 9)
VEN = 0 V; VCC = 3 V
ISTBY
0.65 2
mA
VEN = 0 V; VCC = 5.5 V
3.2 4.5
Supply Dynamic Current (Note 10)
VEN = VCC = 3 V; VIN = 5 V
IDYN
150 250
mA
VEN = VCC = 5.5 V; VIN = 1.8 V
475 680
Bleed Resistance
VEN = 0 V; VCC = 3 V
RBLEED
86
115 144
W
VEN = 0 V; VCC = 5.5 V
72 97 121
EN Input High Voltage
VCC = 3 V − 5.5 V
VIH 2
V
EN Input Low Voltage
VCC = 3 V − 5.5 V
VIL 0.8 V
EN Input Leakage Current
NCP45526−H; VEN = 0 V
IIL 90 500 nA
NCP45526−L; VEN = 5.5 V
IIH 90 500
EN Pull Down Resistance
NCP45526−H
RPD 76 100 124 kW
EN Pull Up Resistance
NCP45526−L
RPU 76 100 124 kW
PG Output Low Voltage (Note 11)
VCC = 3 V; ISINK = 5 mA
VOL
0.2 V
PG Output Leakage Current (Note 12)
VCC = 3 V; VTERM = 3.3 V
IOH 5 100 nA
7. VEN shown only for NCP45526−H (EN Active−High) unless otherwise specified.
8. Average current from VIN to VOUT with MOSFET turned off.
9. Average current from VCC to GND with MOSFET turned off.
10. Average current from VCC to GND after charge up time of MOSFET.
11. PG is an open-drain output that is pulled low when the MOSFET is disabled.
12. PG is an open-drain output that is not driven when the gate of the MOSFET is fully charged, requires an external pull up resistor 1 kW to
an external voltage source, VTERM.
http://onsemi.com
3










Скачать PDF:

[ NCP45526.PDF Даташит ]

Номер в каталогеОписаниеПроизводители
NCP45520(NCP45520 / NCP45521) Advanced Load ManagementON Semiconductor
ON Semiconductor
NCP45521(NCP45520 / NCP45521) Advanced Load ManagementON Semiconductor
ON Semiconductor
NCP45522Advanced Load ManagementON Semiconductor
ON Semiconductor
NCP45523Advanced Load ManagementON Semiconductor
ON Semiconductor

Номер в каталоге Описание Производители
TL431

100 мА, регулируемый прецизионный шунтирующий регулятор

Unisonic Technologies
Unisonic Technologies
IRF840

8 А, 500 В, N-канальный МОП-транзистор

Vishay
Vishay
LM317

Линейный стабилизатор напряжения, 1,5 А

STMicroelectronics
STMicroelectronics

DataSheet26.com    |    2020    |

  Контакты    |    Поиск