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PDF NCP81151B Data sheet ( Hoja de datos )
| Número de pieza | NCP81151B | |
| Descripción | VR12.5 Compatible Synchronous Buck MOSFET Driver | |
| Fabricantes | ON Semiconductor | |
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NCP81151B
VR12.5 Compatible
Synchronous Buck MOSFET
Driver
The NCP81151B is a high performance dual MOSFET gate driver
optimized to drive the gates of both high−side and low−side power
MOSFETs in a synchronous buck converter. It can drive up to 3 nF
load with a 25 ns propagation delay and 20 ns transition time.
Adaptive anti−cross−conduction and power saving operation circuit
can provide a low switching loss and high efficiency solution for
notebook systems.
The UVLO function guarantees the outputs are low when the supply
voltage is low.
Features
• Faster Rise and Fall Times
• Adaptive Anti−Cross−Conduction Circuit
• Zero Cross Detection function
• Output Disable Control Turns Off Both MOSFETs
• Undervoltage Lockout
• Power Saving Operation Under Light Load Conditions
• Direct Interface to NCP6131 and Other Compatible PWM
Controllers
• Thermally Enhanced Package
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Typical Applications
• Power Management Solutions for Notebook Systems
www.onsemi.com
1
DFN8
CASE 506AA
MARKING
DIAGRAM
1
CPMG
G
CP = Specific Device Code
M = Date Code
G = Pb−Free Package
(Note: Microdot may be in either location)
PINOUT DIAGRAM
BST 1
PWM 2
EN 3
VCC 4
FLAG
9
8 DRVH
7 SW
6 GND
5 DRVL
ORDERING INFORMATION
Device
Package
Shipping†
NCP81151BMNTBG DFN8
3000 / Tape &
(Pb−Free)
Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2015
December, 2015 − Rev. 0
1
Publication Order Number:
NCP81151B/D
1 page  
NCP81151B
NCP81151B ELECTRICAL CHARACTERISTICS (−40°C < TA < +100°C; 4.5 V < VCC < 5.5 V, 4.5 V < BST−SWN < 5.5 V,
4.5 V < BST < 30 V, 0 V < SWN < 21 V, unless otherwise noted)
Parameter
Test Conditions
Min Typ Max Unit
SUPPLY VOLTAGE
VCC Operation Voltage
4.5 5.5 V
UNDERVOLTAGE LOCKOUT
VCC Start Threshold
3.8 4.35 4.5
V
VCC UVLO Hysteresis
150 200 250 mV
SUPPLY CURRENT
Shutdown Mode
Normal Mode
Standby Current
ICC + IBST, EN = GND
ICC + IBST, EN = 5 V, PWM = OSC
ICC + IBST, EN = HIGH, PWM = LOW,
No loading on DRVH & DRVL
11 20
4.7
0.9
mA
mA
mA
Standby Current
ICC + IBST, EN = HIGH, PWM = HIGH,
No loading on DRVH & DRVL
1.1 mA
BOOTSTRAP DIODE
Forward Voltage
PWM INPUT
VCC = 5 V, forward bias current = 2 mA
0.1 0.4 0.6
V
PWM Input High
3.4 V
PWM Mid−State
1.3 2.7 V
PWM Input Low
0.7 V
ZCD Blanking Timer
350 ns
HIGH SIDE DRIVER
Output Impedance, Sourcing Current
Output Impedance, Sinking Current
DRVH Rise Time trDRVH
DRVH Fall Time tfDRVH
DRVH Turn−Off Propagation Delay tpdlDRVH
DRVH Turn−On Propagation Delay tpdhDRVH
SW Pulldown Resistance
VBST−VSW = 5 V
VBST−VSW = 5 V
VCC = 5 V, 3 nF load, VBST−VSW = 5 V
VCC = 5 V, 3 nF load, VBST−VSW =5 V
CLOAD = 3 nF
CLOAD = 3 nF
SW to PGND
0.9 1.7
0.7 1.7
16 25
11 18
10 30
10 40
45
W
W
ns
ns
ns
ns
kW
DRVH Pulldown Resistance
DRVH to SW, BST−SW = 0 V
45 kW
LOW SIDE DRIVER
Output Impedance, Sourcing Current
0.9 1.7
W
Output Impedance, Sinking Current
0.4 0.8
W
DRVL Rise Time trDRVL
DRVL Fall Time tfDRVL
DRVL Turn−Off Propagation Delay tpdlDRVL
DRVL Turn−On Propagation Delay tpdhDRVL
DRVL Pulldown Resistance
CLOAD = 3 nF
CLOAD = 3 nF
CLOAD = 3 nF
CLOAD = 3 nF
DRVL to PGND, VCC = PGND
16 25
11 15
10 30
5.0 25
45
ns
ns
ns
ns
kW
www.onsemi.com
5
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet NCP81151B.PDF ] | |
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