NHPAF320 PDF даташит
Спецификация NHPAF320 изготовлена «ON Semiconductor» и имеет функцию, называемую «Surface Mount Ultrafast Power Rectifier». |
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Детали детали
Номер произв | NHPAF320 |
Описание | Surface Mount Ultrafast Power Rectifier |
Производители | ON Semiconductor |
логотип |
5 Pages
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NHPAF320, NRVHPAF320
Surface Mount
Ultrafast Power Rectifier
This SMA flat lead ultrafast rectifier provides fast switching
performance with soft recovery in a compact thermally efficient
package. Its compact footprint makes it ideally suited to portable and
automotive applications where board space is at a premium. Its low
profile makes it a good option for flat panel display and other
applications with limited vertical clearance. The device offers low
leakage over temperature making it a good match for applications
requiring low quiescent current.
Features
• Fast Soft Switching for Reduced EMI and Higher Efficiency
• Low Profile − Maximum Height of 1.1 mm
• Small Footprint − Footprint Area of 13.5 mm2
• NRV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Mechanical Characteristics:
• Case: Molded Epoxy
• Epoxy Meets UL 94 V−0 @ 0.125 in
• Weight: 95 mg (Approximately)
• Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Maximum for 10 Seconds
• MSL 1
Applications
• Switching Power Supplies including Mini−adapters and Displays
• Instrumentation
• Engine Control Recirculation Diodes
• Freewheeling Diode Where Space is at a Premium
www.onsemi.com
ULTRAFAST RECTIFIER
3.0 AMPERE
200 VOLTS
SMA−FL
CASE 403AA
STYLE 6
MARKING DIAGRAM
AYWW
P32G
G
P32 = Specific Device Code
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping†
NHPAF320T3G
NRVHPAF320T3G
SMA−FL
(Pb−Free)
SMA−FL
(Pb−Free)
5000 / Tape &
Reel
5000 / Tape &
Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2015
March, 2015 − Rev. 0
1
Publication Order Number:
NHPAF320/D
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NHPAF320, NRVHPAF320
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
(TL = 115°C)
Peak Repetitive Forward Current
(Rated VR, Square Wave, 20 kHz) TL = 105°C
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)
VRRM
VRWM
VR
IO
IFRM
IFSM
200
3.0
6.0
110
V
A
A
A
Storage Temperature Range
Tstg −65 to +175
°C
Operating Junction Temperature
TJ −65 to +175 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction−to−Lead (Note 1)
Thermal Resistance, Junction−to−Ambient (Note 1)
1. 1 inch square pad size (1 × 0.5 inch) for each lead on FR4 board.
Symbol
YJCL
RqJA
Value
29
80
Unit
°C/W
°C/W
ELECTRICAL CHARACTERISTICS
Value
Characteristic
Maximum Instantaneous Forward Voltage (Note 2)
(iF = 3.0 A)
Maximum Instantaneous Reverse Current (Note 2)
(VR = 200 V)
Symbol
vF
IR
TJ = 25°C
1.00
0.50
TJ = 125°C
0.80
25
Unit
V
mA
Reverse Recovery Time
IF = 3.0 A, VR = 30 V, dl/dt = 50 A/ms, TJ = 25°C
trr 30 ns
Reverse Recovery Time
IF = 3.0 A, VR = 30 V, dl/dt = 50 A/ms, TJ = 125°C
trr 50 ns
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Pulse Test: Pulse Width ≤ 380 ms, Duty Cycle ≤ 2.0%.
www.onsemi.com
2
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NHPAF320, NRVHPAF320
TYPICAL CHARACTERISTICS
100 100
10 TA = 125°C
TA = 150°C
1
TA = 175°C
0.1
0.01
TA = 25°C
10
TA = 150°C
1 TA = 125°C
TA = 175°C
0.1
0.01
TA = 25°C
0.001
TA = −40°C
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Figure 1. Typical Instantaneous Forward
Characteristics
0.001
TA = −40°C
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Figure 2. Maximum Instantaneous Forward
Characteristics
1E−03
1E−04
TA = 175°C
1E−03
1E−04
TA = 175°C
1E−05
1E−06
1E−07
1E−08
1E−09
1E−10
1E−11
TA = 125°C
TA = 25°C
TA = −40°C
TA = 150°C
1E−05
1E−06
1E−07
1E−08
1E−09
1E−10
TA = 125°C
TA = 25°C
TA = 150°C
TA = −40°C
1E−12
1E−11
0 20 40 60 80 100 120 140 160 180 200
0 20 40 60 80 100 120 140 160 180 200
VR, INSTANTANEOUS REVERSE VOLTAGE (V)
VR, INSTANTANEOUS REVERSE VOLTAGE (V)
Figure 3. Typical Reverse Characteristics
Figure 4. Maximum Reverse Characteristics
1000
100
TJ = 25°C
10
0 20 40 60 80 100 120 140 160 180 200
VR, REVERSE VOLTAGE (V)
Figure 5. Typical Junction Capacitance
6
5 DC
RqJC = 29°C/W
4
3 Square
Wave
2
1
0
0 20 40 60 80 100 120 140 160 180
TC, CASE TEMPERATURE (°C)
Figure 6. Current Derating
www.onsemi.com
3
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