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NTMD4102PR2 PDF даташит

Спецификация NTMD4102PR2 изготовлена ​​​​«ON Semiconductor» и имеет функцию, называемую «Trench Power MOSFET».

Детали детали

Номер произв NTMD4102PR2
Описание Trench Power MOSFET
Производители ON Semiconductor
логотип ON Semiconductor логотип 

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NTMD4102PR2 Даташит, Описание, Даташиты
NTMD4102PR2
Product Preview
Trench Power MOSFET
-20 V, P-Channel, SO-8 Dual
This P-Channel device was designed using ON Semiconductor’s
leading edge trench technology for low RDS(on) performance in the
SO-8 dual package for high power and current handling capability.
The low RDS(on) performance is particularly suited for game systems,
notebook and desktop computers, and printers.
Features & Benefits
Leading -20 V Trench for Low RDS(on)
SO-8 Package Provides Excellent Thermal Performance
Surface Mount SO-8 Package Saves Board Space
Pb Free Package for Green Manufacturing
Applications
Load/Power Management
Battery Switching for Multi Cell Li-Ion
Buck-Boost Synchronous Rectification
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Rating
Symbol Value
Unit
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current
- Continuous @ TA = 25°C (Note 1)
- Pulsed Drain Current (t = 10 µs)
Steady State Power Dissipation
@ TA = 25°C (Note 1)
Operating Junction and Storage Temperature
Range
VDSS
VGS
ID
IDM
PD
TJ, Tstg
-20
±20
-6.5
-30
1.1
-55 to
150
V
V
A
W
°C
Continuous Source Current (Body Diode)
Lead Temperature for Soldering Purposes
(1/8from case for 10 seconds)
IS -0.9 A
TL 260 °C
THERMAL RESISTANCE RATINGS
Thermal Resistance
- Junction- to- Ambient - Steady State (Note 1)
- Junction-to-Ambient - t 10 s (Note 1)
- Junction-to-Lead - Steady State (Note 2)
RqJA
RqJA
RqJL
TBD
TBD
TBD
°C/W
1. Surface-mounted on FR4 board using 1sq pad size (Cu area = 1.127 in sq
[1 oz] including traces)
2. Surface-mounted on FR4 board using the minimum recommended pad size
(Cu area = TBD in sq)
This document contains information on a product under development. ON Semiconductor
reserves the right to change or discontinue this product without notice.
http://onsemi.com
VBR(DSS) = -20 VOLTS
RDS(on) (max) = 19 mW @ -10 V
ID(max) (Note 1) = -8.5 A
RDS(on) (max) = 30 mW @ -4.5 V
ID(max) (Note 1) = -6.5 A
P-Channel MOSFET
S
G
D
MARKING DIAGRAM &
PIN ASSIGNMENT
8
1
SO-8
CASE 751
STYLE 12
Source-1
Gate-1
Source-2
Gate-2
18
Drain-1
Drain-1
Drain-2
Drain-2
Top View
XXX
A
L
Y
W
= Specific Device Code
= Assembly Location
= Wafer Lot
= Year
= Work Week
ORDERING INFORMATION
Device
Package
Shipping
NTMD4102PR2
SO-8
2500/Tape & Reel
© Semiconductor Components Industries, LLC, 2003
March, 2003 - Rev. 0
1
Publication Order Number:
NTMD4102PR2/D









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NTMD4102PR2 Даташит, Описание, Даташиты
NTMD4102PR2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Drain-to-Source Breakdown Voltage (Note 3)
(VGS = 0 V, ID = 250 mA)
Zero Gate Voltage Drain Current (Note 3)
(VGS = 0 V, VDS = -16 V)
Gate-to-Source Leakage Current
(VGS = ±20 V, VDS = 0 V)
ON CHARACTERISTICS
Gate Threshold Voltage (Note 3)
(VGS = VDS, ID = -250 mA)
Drain-to-Source On-Resistance
(VGS = -10 V, ID = -8.5 A)
(VGS = -4.5 V, ID = -6.5 A)
Forward Transconductance (VDS = -10 V, ID = -8.4 A)
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
(VGS = 0 V, f = 1 MHz,
VDS = -10 V)
Total Gate Charge
Threshold Gate Charge
Gate-to-Source Gate Charge
Gate-to-Drain “Miller” Charge
Output Charge
Gate Resistance
(VGS = -4.5 V, VDS = -10 V,
ID = -8.4 A)
(VGS = -4.5 V, VDS = -10 V,
ID = -8.4 A)
(VDS = -10 V, ID = -8.4 A)
(VDS = -10 V, ID = -8.4 A)
(VDS = -10 V, VGS = 0 V)
SWITCHING CHARACTERISTICS (Note 4)
Turn-On Delay Time
Rise Time
Turn-Of f Delay Time
(VGS = -4.5 V, VDS = -10 V,
ID = -1.0 A, RG = 6.0 )
Fall Time
DRAIN-SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
(VGS = 0 V, ISD = -1.7 A)
Reverse Recovery Time
Charge Time
Discharge Time
(VGS = 0 V, VDS = -10 V,
dISD/dt = 100 A/ms, ISD = -1.7 A)
Reverse Recovery Charge
3. Pulse Test: Pulse Width 300 µs, Duty Cycle 2%.
4. Switching characteristics are independent of operating junction temperature.
Symbol
V(BR)DSS
IDSS
IGSS
VGS(th)
RDS(on)
gFS
Ciss
Coss
Crss
QG(tot)
QG(th)
QGS
QGD
QOSS
RG
td(on)
tr
td(off)
tf
VSD
trr
ta
tb
Qrr
Min
-20
-
-
-1.0
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ Max Unit
--V
- -1.0 mA
-
±100
nA
--
TBD
TBD
TBD
19
30
-
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
-
-
-
TBD
TBD
-
-
-
-
TBD
TBD
TBD
TBD
-
-
-
-
TBD
TBD
TBD
TBD
TBD
TBD
TBD
-
-
-
V
mW
S
pF
nC
nC
nC
nC
nC
W
ns
V
ns
ns
ns
nC
http://onsemi.com
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NTMD4102PR2 Даташит, Описание, Даташиты
NTMD4102PR2
PACKAGE DIMENSIONS
SOIC-8 NB
CASE 751-07
ISSUE AA
-X-
A
B
-Y-
-Z-
H
85
S 0.25 (0.010) M Y M
1
4
K
G
D
C
SEATING
PLANE
N X 45 _
0.10 (0.004)
M
0.25 (0.010) M Z Y S X S
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION A AND B DO NOT INCLUDE MOLD
PROTRUSION.
4. MAXIMUM MOLD PROTRUSION 0.15 (0.006) PER
SIDE.
5. DIMENSION D DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE 0.127 (0.005) TOTAL IN
EXCESS OF THE D DIMENSION AT MAXIMUM
MATERIAL CONDITION.
6. 751−01 THRU 751−06 ARE OBSOLETE. NEW
STANDARD IS 751−07.
MILLIMETERS
INCHES
DIM MIN MAX MIN MAX
A 4.80 5.00 0.189 0.197
B 3.80 4.00 0.150 0.157
C 1.35 1.75 0.053 0.069
D 0.33 0.51 0.013 0.020
G 1.27 BSC
0.050 BSC
H 0.10 0.25 0.004 0.010
J J 0.19 0.25 0.007 0.010
K 0.40 1.27 0.016 0.050
M 0_ 8_ 0_ 8_
N 0.25 0.50 0.010 0.020
S 5.80 6.20 0.228 0.244
STYLE 12:
PIN 1. SOURCE
2. SOURCE
3. SOURCE
4. GATE
5. DRAIN
6. DRAIN
7. DRAIN
8. DRAIN
http://onsemi.com
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Номер в каталогеОписаниеПроизводители
NTMD4102PR2Trench Power MOSFETON Semiconductor
ON Semiconductor

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