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NTS245ESF PDF даташит

Спецификация NTS245ESF изготовлена ​​​​«ON Semiconductor» и имеет функцию, называемую «Very Low Forward Voltage Trench-based Schottky Rectifier».

Детали детали

Номер произв NTS245ESF
Описание Very Low Forward Voltage Trench-based Schottky Rectifier
Производители ON Semiconductor
логотип ON Semiconductor логотип 

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NTS245ESF Даташит, Описание, Даташиты
NTS245ESF, NRVTS245ESF,
NTSM245ESF,
NRVTSM245ESF
Product Preview
Very Low Forward Voltage
Trench-based Schottky
Rectifier
Features
Fine Lithography Trenchbased Schottky Technology for Very Low
Forward Voltage and Low Leakage
Fast Switching with Exceptional Temperature Stability
Low Power Loss and Lower Operating Temperature
Higher Efficiency for Achieving Regulatory Compliance
Low Thermal Resistance
High Surge Capability
NRV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AECQ101
Qualified and PPAP Capable
These are PbFree and HalideFree Devices
Mechanical Characteristics:
Case: Molded Epoxy
Epoxy Meets UL 94 V0 @ 0.125 in
Weight: 11.7 mg (Approximately)
Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Maximum for 10 Seconds
MSL 1
Typical Applications
Switching Power Supplies including Compact Adapters and Flat
Panel Display
High Frequency and DCDC Converters
Freewheeling and ORing diodes
Reverse Battery Protection
Instrumentation
Automotive LED Lighting
This document contains information on a product under development. ON Semiconductor
reserves the right to change or discontinue this product without notice.
http://onsemi.com
TRENCH SCHOTTKY
RECTIFIER
2.0 AMPERES
45 VOLTS
SOD123FL
CASE 498
PLASTIC
POWERMITE
CASE 457
PLASTIC
MARKING DIAGRAMS
T42MG
G
1
M
T42G
2
T42 = Specific Device Code
M = Date Code
G = PbFree Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
NTS245ESFT3G
Package
SOD123
(PbFree)
Shipping
10,000/
Tape & Reel
NRVTS245ESFT3G
SOD123
10,000/
(PbFree) Tape & Reel
NTSM245ESFT3G
POWERMITE 12,000/
(PbFree) Tape & Reel
NRVTSM245ESFT3G POWERMITE 12,000/
(PbFree) Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2014
July, 2014 Rev. P0
1
Publication Order Number:
NTS245ESF/D









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NTS245ESF Даташит, Описание, Даташиты
NTS245ESF, NRVTS245ESF, NTSM245ESF, NRVTSM245ESF
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
(TL = TBD°C)
Peak Repetitive Forward Current
(Square Wave, 20 kHz, TL = TBD°C)
NonRepetitive Peak Surge Current
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)
VRRM
VRWM
VR
IO
IFRM
IFSM
45 V
2.0 A
4.0 A
50 A
Storage and Operating Junction Temperature Range (Note 1)
Tstg, TJ
65 to +175
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. The heat generated must be less than the thermal conductivity from
JunctiontoAmbient: dPD/dTJ < 1/RqJA.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Value
Unit
Thermal Resistance, JunctiontoLead (Note 2)
Thermal Resistance, JunctiontoAmbient (Note 2)
Thermal Resistance, JunctiontoAmbient (Note 3)
ELECTRICAL CHARACTERISTICS
YJCL
RqJA
RqJA
23 °C/W
85 °C/W
330 °C/W
Characteristic
Symbol
Value
Unit
Maximum Instantaneous Forward Voltage (Note 4)
(IF = 2.0 A, TJ = 25°C)
(IF = 2.0 A, TJ = 125°C)
VF V
0.62
0.55
Maximum Instantaneous Reverse Current (Note 4)
(Rated dc Voltage, TJ = 25°C)
(Rated dc Voltage, TJ = 125°C)
IR
50 mA
6 mA
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Mounted with 700 mm2 copper pad size (Approximately 1 in2) 1 oz FR4 Board.
3. Mounted with pad size approximately 20 mm2 copper, 1 oz FR4 Board.
4. Pulse Test: Pulse Width 380 ms, Duty Cycle 2.0%.
http://onsemi.com
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NTS245ESF Даташит, Описание, Даташиты
NTS245ESF, NRVTS245ESF, NTSM245ESF, NRVTSM245ESF
TYPICAL CHARACTERISTICS
1000
50% (DUTY CYCLE)
100 25%
10%
5.0%
10 2.0%
1.0%
1.0
0.1
SINGLE PULSE
0.01
0.000001 0.00001
0.0001
0.001
0.01
0.1 1.0 10
PULSE TIME (s)
Figure 1. Thermal Response, JunctiontoAmbient (20 mm2 pad)
100
1000
100
50% (DUTY CYCLE)
25%
10 10%
5.0%
2.0%
1.0
1.0%
0.1
SINGLE PULSE
0.01
0.000001
0.00001
0.0001
0.001
0.01
0.1 1.0 10
PULSE TIME (s)
Figure 2. Thermal Response, JunctiontoAmbient (1 in2 pad)
100 1000
http://onsemi.com
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Номер в каталогеОписаниеПроизводители
NTS245ESFVery Low Forward Voltage Trench-based Schottky RectifierON Semiconductor
ON Semiconductor

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