NRVTSM245ESF PDF даташит
Спецификация NRVTSM245ESF изготовлена «ON Semiconductor» и имеет функцию, называемую «Very Low Forward Voltage Trench-based Schottky Rectifier». |
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Детали детали
Номер произв | NRVTSM245ESF |
Описание | Very Low Forward Voltage Trench-based Schottky Rectifier |
Производители | ON Semiconductor |
логотип |
5 Pages
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NTS245ESF, NRVTS245ESF,
NTSM245ESF,
NRVTSM245ESF
Product Preview
Very Low Forward Voltage
Trench-based Schottky
Rectifier
Features
• Fine Lithography Trench−based Schottky Technology for Very Low
Forward Voltage and Low Leakage
• Fast Switching with Exceptional Temperature Stability
• Low Power Loss and Lower Operating Temperature
• Higher Efficiency for Achieving Regulatory Compliance
• Low Thermal Resistance
• High Surge Capability
• NRV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
• These are Pb−Free and Halide−Free Devices
Mechanical Characteristics:
• Case: Molded Epoxy
• Epoxy Meets UL 94 V−0 @ 0.125 in
• Weight: 11.7 mg (Approximately)
• Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Maximum for 10 Seconds
• MSL 1
Typical Applications
• Switching Power Supplies including Compact Adapters and Flat
Panel Display
• High Frequency and DC−DC Converters
• Freewheeling and OR−ing diodes
• Reverse Battery Protection
• Instrumentation
• Automotive LED Lighting
This document contains information on a product under development. ON Semiconductor
reserves the right to change or discontinue this product without notice.
http://onsemi.com
TRENCH SCHOTTKY
RECTIFIER
2.0 AMPERES
45 VOLTS
SOD−123FL
CASE 498
PLASTIC
POWERMITE
CASE 457
PLASTIC
MARKING DIAGRAMS
T42MG
G
1
M
T42G
2
T42 = Specific Device Code
M = Date Code
G = Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
NTS245ESFT3G
Package
SOD−123
(Pb−Free)
Shipping†
10,000/
Tape & Reel
NRVTS245ESFT3G
SOD−123
10,000/
(Pb−Free) Tape & Reel
NTSM245ESFT3G
POWERMITE 12,000/
(Pb−Free) Tape & Reel
NRVTSM245ESFT3G POWERMITE 12,000/
(Pb−Free) Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2014
July, 2014 − Rev. P0
1
Publication Order Number:
NTS245ESF/D
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NTS245ESF, NRVTS245ESF, NTSM245ESF, NRVTSM245ESF
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
(TL = TBD°C)
Peak Repetitive Forward Current
(Square Wave, 20 kHz, TL = TBD°C)
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)
VRRM
VRWM
VR
IO
IFRM
IFSM
45 V
2.0 A
4.0 A
50 A
Storage and Operating Junction Temperature Range (Note 1)
Tstg, TJ
−65 to +175
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. The heat generated must be less than the thermal conductivity from
Junction−to−Ambient: dPD/dTJ < 1/RqJA.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Value
Unit
Thermal Resistance, Junction−to−Lead (Note 2)
Thermal Resistance, Junction−to−Ambient (Note 2)
Thermal Resistance, Junction−to−Ambient (Note 3)
ELECTRICAL CHARACTERISTICS
YJCL
RqJA
RqJA
23 °C/W
85 °C/W
330 °C/W
Characteristic
Symbol
Value
Unit
Maximum Instantaneous Forward Voltage (Note 4)
(IF = 2.0 A, TJ = 25°C)
(IF = 2.0 A, TJ = 125°C)
VF V
0.62
0.55
Maximum Instantaneous Reverse Current (Note 4)
(Rated dc Voltage, TJ = 25°C)
(Rated dc Voltage, TJ = 125°C)
IR
50 mA
6 mA
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Mounted with 700 mm2 copper pad size (Approximately 1 in2) 1 oz FR4 Board.
3. Mounted with pad size approximately 20 mm2 copper, 1 oz FR4 Board.
4. Pulse Test: Pulse Width ≤ 380 ms, Duty Cycle ≤ 2.0%.
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NTS245ESF, NRVTS245ESF, NTSM245ESF, NRVTSM245ESF
TYPICAL CHARACTERISTICS
1000
50% (DUTY CYCLE)
100 25%
10%
5.0%
10 2.0%
1.0%
1.0
0.1
SINGLE PULSE
0.01
0.000001 0.00001
0.0001
0.001
0.01
0.1 1.0 10
PULSE TIME (s)
Figure 1. Thermal Response, Junction−to−Ambient (20 mm2 pad)
100
1000
100
50% (DUTY CYCLE)
25%
10 10%
5.0%
2.0%
1.0
1.0%
0.1
SINGLE PULSE
0.01
0.000001
0.00001
0.0001
0.001
0.01
0.1 1.0 10
PULSE TIME (s)
Figure 2. Thermal Response, Junction−to−Ambient (1 in2 pad)
100 1000
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Номер в каталоге | Описание | Производители |
NRVTSM245ESF | Very Low Forward Voltage Trench-based Schottky Rectifier | ON Semiconductor |
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