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PDF HN4B102J Data sheet ( Hoja de datos )
| Número de pieza | HN4B102J | |
| Descripción | Silicon PNP / NPN Epitaxial Type Transistor | |
| Fabricantes | Toshiba | |
| Logotipo |  |
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HN4B102J
TOSHIBA Transistor Silicon PNP / NPN Epitaxial Type (PCT Process)
HN4B102J
MOS Gate Drive Applications
Switching Applications
• Small footprint due to a small and thin package
• High DC current gain : PNP hFE = 200 to 500 (IC =－0.2 A)
: NPN hFE = 200 to 500 (IC = 0.2 A)
• Low collector-emitter saturation : PNP VCE (sat) =－0.20 V (max)
: NPN VCE (sat) = 0.14 V (max)
• High-speed switching : PNP tf = 40 ns (typ.)
: NPN tf = 45 ns (typ.)
+0.2
2.8 -0.3
+0.2
1.6 -0.1
Unit: mm
15
2
4
3
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
DC (Note 1)
Pulse (Note 1)
Base current
Collector power
Single-device
dissipation (t = 10 s)
operation
Collector power
dissipation (DC)
Single-device
operation
Junction temperature
Storage temperature range
Symbol
VCBO
VCEO
VEBO
IC
ICP
IB
Rating
PNP NPN
−30
−30
−7
−1.8
−8.0
60
30
7
2.0
8.0
−0.5 0.5
PC (Note 2)
1.1
PC (Note 2)
Tj
Tstg
0.75
150
−55 to 150
Unit
V
V
V
A
A
W
W
°C
°C
1. Base
(Q1 PNP)
2. Emitter (Q1 PNP/Q2 NPN)
3. Base
(Q2 NPN)
4. Collector (Q2 NPN)
5. Collector (Q1 PNP)
JEDEC
―
JEITA
―
TOSHIBA
2-3L1A
Weight: 0.014g (typ.)
Note 1: Ensure that the channel temperature does not exceed 150°C during use of the device.
Note 2: Mounted on an FR4 board (glass-epoxy; 1.6 mm thick; Cu area, 645 mm2)
Note 3:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Figure 1 Circuit Configuration (top view)
５４
Figure 2 Marking
Part No.
(or abbreviation code)
5L
１２３
Q1 Q2
(PNP) (NPN)
Start of commercial production
2007-02
1 2013-11-01
1 page  
Common
1000
rth－tw
HN4B102J
100
10
1
0.001
0.01
Curves apply only to limited areas of thermal resistance.
Single nonepetitive pulse Ta = 25°C
Mounted on an FR4 board (glass-epoxy; 1.6 mm thick; Cu area, 645 mm2)
Single-device operation
0.1 1
10 100 1000
Pulse width tw (s)
5 2013-11-01
5 Page | ||
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