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NTSV30H100CT PDF даташит

Спецификация NTSV30H100CT изготовлена ​​​​«ON Semiconductor» и имеет функцию, называемую «Very Low Forward Voltage Trench-based Schottky Rectifier».

Детали детали

Номер произв NTSV30H100CT
Описание Very Low Forward Voltage Trench-based Schottky Rectifier
Производители ON Semiconductor
логотип ON Semiconductor логотип 

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NTSV30H100CT Даташит, Описание, Даташиты
NTSV30H100CT
Very Low Forward Voltage
Trench-based Schottky
Rectifier
Exceptionally Low VF = 0.471 V at IF = 5 A
Features
Fine Lithography Trenchbased Schottky Technology for Very Low
Forward Voltage and Low Leakage
Fast Switching with Exceptional Temperature Stability
Low Power Loss and Lower Operating Temperature
Higher Efficiency for Achieving Regulatory Compliance
Low Thermal Resistance
High Surge Capability
These Devices are PbFree, Halogen Free/BFR Free and are RoHS
Compliant
Typical Applications
Switching Power Supplies including Notebook / Netbook Adapters,
ATX and Flat Panel Display
High Frequency and DCDC Converters
Freewheeling and ORing diodes
Reverse Battery Protection
Instrumentation
Mechanical Characteristics
Case: Epoxy, Molded
Epoxy Meets Flammability Rating UL 940 @ 0.125 in
Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
Lead Temperature for Soldering Purposes: 260°C Maximum for
10 sec
www.onsemi.com
PIN CONNECTIONS
1
2, 4
3
4
1 23
TO220AB
CASE 221A
STYLE 6
MARKING DIAGRAM
AY WW
TSV30H10G
AKA
A
Y
WW
AKA
G
= Assembly Location
= Year
= Work Week
= Polarity Designator
= PbFree Package
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
© Semiconductor Components Industries, LLC, 2014
November, 2014 Rev. 1
1
Publication Order Number:
NTSV30H100CT/D









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NTSV30H100CT Даташит, Описание, Даташиты
NTSV30H100CT
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
(Rated VR, TC = 116°C)
(Rated VR, TC = 133°C)
Peak Repetitive Forward Current
(Rated VR, Square Wave, 20 kHz, TC = 108°C)
(Rated VR, Square Wave, 20 kHz, TC = 133°C)
Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions halfwave, single phase, 60 Hz)
Per device
Per diode
Per device
Per diode
VRRM
VRWM
VR
IF(AV)
IFRM
IFSM
100
30
15
60
30
125
V
A
A
A
Operating Junction Temperature
TJ
40 to +150
°C
Storage Temperature
Tstg 40 to +150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Typical Thermal Resistance
Rating
JunctiontoCase
JunctiontoAmbient
Symbol
RRqqJJCA
Value
1.4
47
Unit
°C/W
°C/W
ELECTRICAL CHARACTERISTICS (Per Leg unless otherwise noted)
Rating
Symbol
Typ
Max Unit
Maximum Instantaneous Forward Voltage (Note 1)
(IF = 5 A, TJ = 25°C)
(IF = 7.5 A, TJ = 25°C)
(IF = 15 A, TJ = 25°C)
vF 0.517
0.579
0.742
0.85
V
(IF = 5 A, TJ = 125°C)
(IF = 7.5 A, TJ = 125°C)
(IF = 15 A, TJ = 125°C)
Maximum Instantaneous Reverse Current (Note 1)
(VR = 70 V, TJ = 25°C)
(VR = 70 V, TJ = 125°C)
0.471
0.539
0.651
0.72
IR
3.9
4.2
mA
mA
(Rated dc Voltage, TJ = 25°C)
(Rated dc Voltage, TJ = 125°C)
15.2 95 mA
10.0 30 mA
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle v 2.0%
ORDERING INFORMATION
Device
NTSV30H100CTG
Package
TO220AB
(PbFree)
Shipping
50 Units / Rail
www.onsemi.com
2









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NTSV30H100CT Даташит, Описание, Даташиты
NTSV30H100CT
TYPICAL CHARACTERISTICS
100
TA = 125°C
100
10
TA = 150°C
1.0
TA = 25°C
10 TA = 125°C
TA = 150°C
1.0
TA = 25°C
TA = 40°C
TA = 40°C
0.1
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4
0.1
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.31.4
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Figure 1. Typical Instantaneous Forward
Characteristics
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Figure 2. Maximum Instantaneous Forward
Characteristics
1.E+00
1.E+00
1.E01
1.E02
1.E03
TA = 150°C
TA = 125°C
1.E01
1.E02
1.E03
TA = 150°C
TA = 125°C
1.E04
1.E05
1.E06
TA = 25°C
1.E04
1.E05
1.E06
TA = 25°C
1.E07
1.E07
0 10 20 30 40 50 60 70 80 90 100
0 10 20 30 40 50 60 70 80 90 100
VR, INSTANTANEOUS REVERSE VOLTAGE (V)
Figure 3. Typical Reverse Characteristics
VR, INSTANTANEOUS REVERSE VOLTAGE (V)
Figure 4. Maximum Reverse Characteristics
10k
TJ = 25°C
1k
100
0.1
1 10
VR, REVERSE VOLTAGE (V)
Figure 5. Typical Junction Capacitance
100
30
25 DC
20
Square Wave
15
RqJC = 1.42°C/W
10
5
040 50 60 70 80 90 100 110 120 130 140150
TC, CASE TEMPERATURE (°C)
Figure 6. Current Derating per Leg
www.onsemi.com
3










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Номер в каталогеОписаниеПроизводители
NTSV30H100CTVery Low Forward Voltage Trench-based Schottky RectifierON Semiconductor
ON Semiconductor

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