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PDF NCE1012E Data sheet ( Hoja de datos )
| Número de pieza | NCE1012E | |
| Descripción | N-Channel Enhancement Mode Power MOSFET | |
| Fabricantes | NCE Power Semiconductor | |
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http://www.ncepower.com
Pb Free Product
NCE1012E
NCE N-Channel Enhancement Mode Power MOSFET
Description
The NCE1012E uses advanced trench technology to provide
excellent RDS(ON), low gate charge and operation with gate
voltages as low as 1.8V. This device is suitable for use as a
Battery protection or in other Switching application.
General Features
● VDS = 20V,ID =0.6A
RDS(ON) <350mΩ @ VGS=4.5V
RDS(ON) <500mΩ @ VGS=2.5V
● High power and current handing capability
● Lead free product is acquired
● Gate-Source ESD protection
Application
● Battery operated systems
● Load/ power switching cell phones pagers
● Power supply converter circuits
Schematic diagram
Marking and pin assignment
SOT-523 top view
Package Marking and Ordering Information
Device Marking Device
Device Package
1012E
NCE1012E
SOT-523
Reel Size
Ø180mm
Tape width
8 mm
Quantity
3000units
Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
Drain Current-Pulsed (Note 1)
ID
IDM
Maximum Power Dissipation
PD
Operating Junction and Storage Temperature Range
TJ,TSTG
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient (Note 2)
RθJA
Electrical Characteristics (TA=25℃unless otherwise noted)
Parameter
Symbol
Condition
Off Characteristics
Drain-Source Breakdown Voltage
BVDSS
VGS=0V ID=250μA
Limit
20
±10
0.6
1
150
-55 To 150
Unit
V
V
A
A
mW
℃
833 ℃/W
Min Typ Max Unit
20 22
-
V
Wuxi NCE Power Semiconductor Co., Ltd
Page 1
v1.0
1 page  
http://www.ncepower.com
Pb Free Product
NCE1012E
Square Wave Pluse Duration(sec)
Figure 14 Normalized Maximum Transient Thermal Impedance
Wuxi NCE Power Semiconductor Co., Ltd
Page 5
v1.0
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet NCE1012E.PDF ] | |
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