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Número de pieza | NCE3011E | |
Descripción | N-Channel Enhancement Mode Power MOSFET | |
Fabricantes | NCE Power Semiconductor | |
Logotipo | ||
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Pb Free Product
NCE3011E
NCE N-Channel Enhancement Mode Power MOSFET
Description
The NCE3011E uses advanced trench technology to provide
excellent RDS(ON), low gate charge and operation with gate
voltages as low as 2.5V. This device is suitable for use as a
load switch or in PWM applications.It is ESD protested.
General Features
● VDS = 30V,ID =11A
RDS(ON) < 10mΩ @ VGS=10V
RDS(ON) < 14mΩ @ VGS=4.5V
ESD Rating: 2000V HBM
● High power and current handing capability
● Lead free product is acquired
● Surface mount package
Application
●PWM application
●Load switch
Schematic diagram
Marking and pin assignment
SOP-8 top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
3011E
NCE3011E
SOP-8
Reel Size
Ø330mm
Tape width
12mm
Quantity
3000 units
Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
Drain Current-Pulsed (Note 1)
ID
IDM
Maximum Power Dissipation
PD
Operating Junction and Storage Temperature Range
TJ,TSTG
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient (Note 2)
RθJA
Limit
30
±10
11
50
2.5
-55 To 150
50
Unit
V
V
A
A
W
℃
℃/W
Wuxi NCE Power Semiconductor Co., Ltd
Page 1
v1.0
1 page http://www.ncepower.com
Pb Free Product
NCE3011E
Vds Drain-Source Voltage (V)
Figure 13 Safe Operation Area
Square Wave Pluse Duration(sec)
Figure 14 Normalized Maximum Transient Thermal Impedance
Wuxi NCE Power Semiconductor Co., Ltd
Page 5
v1.0
5 Page |
Páginas | Total 7 Páginas | |
PDF Descargar | [ Datasheet NCE3011E.PDF ] |
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