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NSV1C200L PDF даташит

Спецификация NSV1C200L изготовлена ​​​​«ON Semiconductor» и имеет функцию, называемую «PNP Transistor».

Детали детали

Номер произв NSV1C200L
Описание PNP Transistor
Производители ON Semiconductor
логотип ON Semiconductor логотип 

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NSV1C200L Даташит, Описание, Даташиты
NSS1C200L, NSV1C200L
100 V, 2.0 A, Low VCE(sat)
PNP Transistor
ON Semiconductor’s e2PowerEdge family of low VCE(sat)
transistors are miniature surface mount devices featuring ultra low
saturation voltage (VCE(sat)) and high current gain capability. These
are designed for use in low voltage, high speed switching applications
where affordable efficient energy control is important.
Typical applications are DC−DC converters and power management
in portable and battery powered products such as cellular and cordless
phones, PDAs, computers, printers, digital cameras and MP3 players.
Other applications are low voltage motor controls in mass storage
products such as disc drives and tape drives. In the automotive
industry they can be used in air bag deployment and in the instrument
cluster. The high current gain allows e2PowerEdge devices to be
driven directly from PMU’s control outputs, and the Linear Gain
(Beta) makes them ideal components in analog amplifiers.
Features
NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (TA = 25°C)
Rating
Symbol
Max Unit
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current − Continuous
Collector Current − Peak
THERMAL CHARACTERISTICS
VCEO
VCBO
VEBO
IC
ICM
−100
−140
−7.0
−2.0
−3.0
Vdc
Vdc
Vdc
A
A
Characteristic
Symbol
Max Unit
Total Device Dissipation
TA = 25°C
Derate above 25°C
PD (Note 1)
490 mW
3.7 mW/°C
Thermal Resistance,
Junction−to−Ambient
RqJA (Note 1)
255
°C/W
Total Device Dissipation
TA = 25°C
Derate above 25°C
PD (Note 2)
710 mW
4.3 mW/°C
Thermal Resistance,
Junction−to−Ambient
RqJA (Note 2)
176
°C/W
Junction and Storage
Temperature Range
TJ, Tstg
−55 to
+150
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FR− 4 @ 100 mm2, 1 oz. copper traces.
2. FR− 4 @ 500 mm2, 1 oz. copper traces.
© Semiconductor Components Industries, LLC, 2014
December, 2014 − Rev. 5
1
www.onsemi.com
−100 VOLTS, 2.0 AMPS
PNP LOW VCE(sat) TRANSISTOR
COLLECTOR
3
1
BASE
2
EMITTER
3
1
2
SOT−23 (TO−236)
CASE 318
STYLE 6
MARKING DIAGRAM
VL MG
G
1
VL = Specific Device Code
M = Date Code*
G = Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
Device
Package
Shipping
NSS1C200LT1G, SOT−23 3000/Tape & Reel
NSV1C200LT1G (Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Publication Order Number:
NSS1C200L/D









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NSV1C200L Даташит, Описание, Даташиты
NSS1C200L, NSV1C200L
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max Unit
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage
(IC = −10 mAdc, IB = 0)
Collector −Base Breakdown Voltage
(IC = −0.1 mAdc, IE = 0)
Emitter −Base Breakdown Voltage
(IE = −0.1 mAdc, IC = 0)
Collector Cutoff Current
(VCB = −140 Vdc, IE = 0)
Emitter Cutoff Current
(VEB = −6.0 Vdc)
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICBO
IEBO
−100
−140
−7.0
−100
−50
Vdc
Vdc
Vdc
nAdc
nAdc
ON CHARACTERISTICS
DC Current Gain (Note 3)
(IC = −10 mA, VCE = −2.0 V)
(IC = −500 mA, VCE = −2.0 V)
(IC = −1.0 A, VCE = −2.0 V)
(IC = −2.0 A, VCE = −2.0 V)
hFE
150
120 240 360
80
50
Collector −Emitter Saturation Voltage (Note 3)
(IC = −0.1 A, IB = −0.01 A)
(IC = −0.5 A, IB = −0.05 A)
(IC = −1.0 A, IB = −0.100 A)
(IC = −2.0 A, IB = −0.200 A)
VCE(sat)
−0.040
−0.080
−0.115
−0.250
V
Base −Emitter Saturation Voltage (Note 3)
(IC = −1.0 A, IB = −0.100 A)
VBE(sat)
−0.950
V
Base −Emitter Turn−on Voltage (Note 3)
(IC = −1.0 A, VCE = −2.0 V)
VBE(on)
−0.850
V
Cutoff Frequency
(IC = −100 mA, VCE = −5.0 V, f = 100 MHz)
fT MHz
120
Input Capacitance (VEB = 2.0 V, f = 1.0 MHz)
Cibo 200 pF
Output Capacitance (VCB = 10 V, f = 1.0 MHz)
Cobo
22
pF
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle 2%.
0.60
0.50
Note 2
0.40
0.30 Note 1
0.20
0.10
0
0 20 40 60 80 100 120 140 160
TA, AMBIENT TEMPERATURE (°C)
Figure 1. Power Derating
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NSV1C200L Даташит, Описание, Даташиты
500
400
300
200
100
0
0.001
1
150°C
NSS1C200L, NSV1C200L
VCE = 2 V
500
400
150°C
VCE = 4 V
25°C
−55°C
300 25°C
200
−55°C
100
0.01 0.1
1
IC, COLLECTOR CURRENT (A)
Figure 2. DC Current Gain
0
10 0.001
0.01 0.1
1
IC, COLLECTOR CURRENT (A)
Figure 3. DC Current Gain
10
1
0.1
25°C
150°C
0.1 150°C
25°C
−55°C
0.01
0.001
0.01
−55°C
0.1
IC/IB = 10
1 10
IC, COLLECTOR CURRENT (A)
Figure 4. Collector−Emitter Saturation Voltage
0.01
0.001
0.01
0.1
IC/IB = 50
1 10
IC, COLLECTOR CURRENT (A)
Figure 5. Collector−Emitter Saturation Voltage
1.2
1.0
−55°C
0.8
25°C
0.6
150°C
0.4
0.2
0
0.001
0.01
0.1
IC/IB = 10
1
IC, COLLECTOR CURRENT (A)
Figure 6. Base−Emitter Saturation Voltage
10
1.2
1.0
−55°C
0.8
25°C
0.6
150°C
0.4
0.2
0
0.001
0.01
0.1
IC/IB = 50
1 10
IC, COLLECTOR CURRENT (A)
Figure 7. Base−Emitter Saturation Voltage
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