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PDF ZXMS6002GQ Data sheet ( Hoja de datos )

Número de pieza ZXMS6002GQ
Descripción N-CHANNEL SELF PROTECTED ENHANCEMENT MODE MOSFET
Fabricantes Diodes 
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ZXMS6002GQ
60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE
INTELLIFET ® MOSFET WITH STATUS INDICATION
Product Summary
Continuous Drain Source Voltage VDS= 60V
On-State Resistance
500m
Nominal Load Current (VIN = 5V) 1.4A
Clamping Energy
550mJ
Description
Self protected low side MOSFET. Monolithic over temperature, over
current, over voltage (active clamp) and ESD protected logic level
functionality.
Intended as a general purpose switch, with status indication and
programmable current limit.
Applications
Especially suited for loads with a high in-rush current such as
lamps and motors
All types of resistive, inductive and capacitive loads in
switching applications
μC compatible power switch for 12V and 24V DC applications
Automotive rated
Replaces electromechanical relays and discrete circuits
Linear mode capability - the current-limiting protection circuitry
is designed to de-activate at low VDS, in order not to
compromise the load current during normal operation. The
design max. DC operating current is therefore determined by
the thermal capability of the package/board combination, rather
than by the protection circuitry.
Note: This does not compromise the product's ability to self-
protect during short-circuit load conditions.
Status pin voltage reflects the gate drive being applied
internally to the power MOSFET.
With VIN = 5V:
Status voltage ~ 5V indicates normal operation
Status voltage ~ (2-3)V indicates that the device is in
current-limiting mode
Status voltage < 1V indicates that the device is in
thermal shutdown
Features and Benefits
Status Pin (Analog Status Indication)
Logic Level Input
Short Circuit Protection with Auto Restart
Over Voltage Protection (Active Clamp)
Thermal Shutdown with Auto Restart
Over-Current Protection
Input Protection (ESD)
Load Dump Protection (Actively Protects Load)
High Continuous Current Rating
Lead-Free Finish; RoHS compliant (Note 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
PPAP Capable (Note 4)
Mechanical Data
Case: SOT-223
Case Material: Molded Plastic, “Green” Molding Compound
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Matte Tin Finish
Weight: 0.112 grams (approximate)
Note: The tab is connected to the drain pin and must be electrically isolated
from the source pin. Connection of significant copper to the tab is
recommended for best thermal performance.
SOT-223
Top View
Top view
Pin Out
Ordering Information
Notes:
Product
ZXMS6002GQTA
Marking
ZXMS6002
Reel size (inches)
7
Tape width (mm)
12
Quantity per reel
1,000 units
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally
the same, except where specified. For more information, please refer to http://www.diodes.com/quality/product_compliance_definitions/.
5. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
IntelliFET is a registered trademark of Diodes Incorporated.
ZXMS6002GQ
Document number: DS33606 Rev. 1 - 2
1 of 9
www.diodes.com
April 2014
© Diodes Incorporated

1 page




ZXMS6002GQ pdf
Electrical Characteristics (@Tamb = +25°C, unless otherwise stated.)
Parameter
SYMBOL MIN TYP
Static Characteristics
Drain-Source Clamp Voltage
VDS(AZ) 60 70
Off state Drain Current
IDSS
— 0.1
Off state Drain Current
IDSS
—3
Input Threshold Voltage (Note 8)
VIN(th)
1 2.1
Input Current
IIN — 0.7
Input Current
IIN — 1.5
Input Current
IIN — 4
Static Drain-Source On-State Resistance
RDS(on)
— 520
Static Drain-Source On-State Resistance
RDS(on)
— 385
Current Limit (Note 9)
ID(LIM)
0.7 1.0
Current Limit (Note 9)
ID(LIM)
1 1.8
Dynamic Characteristics
Turn-On Time (VIN to 90% ID)
ton — 3
Turn-Off time (VIN to 90% ID)
toff — 13
Slew Rate On (70 to 50% VDD)
-DVDS/dton
8
Slew Rate Off (50 to 70% VDD)
DVDS/dton
3.2
Notes:
8. Protection features may operate outside spec for VIN < 4.5V
9. The drain current is limited to a reduced value when Vds exceeds a safe level.
MAX
75
3
15
1.2
2.7
7
675
500
1.5
2.3
10
20
20
10
ZXMS6002GQ
UNIT
CONDITIONS
V ID = 10mA
μA VDS = 12V, VIN = 0V
μA VDS = 32V, VIN = 0V
V VDS = VGS, ID = 1mA
mA VIN = +5V
mA VIN = +7V
mA VIN = +10V
mVIN = 5V, ID = 0.7A
mVIN = 10V, ID = 0.7A
A VIN = 5V, VDS > 5V
A VIN = 10V, VDS > 5V
μs
μs
V/μs
V/μs
RL = 22ohm, VIN = 0 to 10V,
VDD = 12V
RL = 22ohm, VIN = 10V to 0V,
VDD = 12V
RL = 22ohm, VIN = 0 to 10V,
VDD = 12V
RL = 22ohm, VIN = 10V to 0V,
VDD = 12V
IntelliFET is a registered trademark of Diodes Incorporated.
ZXMS6002GQ
Document number: DS33606 Rev. 1 - 2
5 of 9
www.diodes.com
April 2014
© Diodes Incorporated

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