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What is ZXMS6003GQ?

This electronic component, produced by the manufacturer "Diodes", performs the same function as "N-CHANNEL SELF PROTECTED ENHANCEMENT MODE MOSFET".


ZXMS6003GQ Datasheet PDF - Diodes

Part Number ZXMS6003GQ
Description N-CHANNEL SELF PROTECTED ENHANCEMENT MODE MOSFET
Manufacturers Diodes 
Logo Diodes Logo 


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ZXMS6003GQ
60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE
INTELLIFET®MOSFET WITH PROGRAMMABLE CURRENT LIMIT
Product Summary
Continuous Drain Source Voltage VDS = 60V
On-State Resistance
500m
Nominal Load Current (VIN = 5V) 1.4A
Clamping Energy
550mJ
Description
Self protected low side MOSFET. Monolithic over temperature, over
current, over voltage (active clamp) and ESD protected logic level
functionality. Intended as a general purpose switch, with status
indication and programmable current limit.
Applications
Especially suited for loads with a high in-rush current such as
lamps and motors
All types of resistive, inductive and capacitive loads in switching
applications
μC compatible power switch for 12V and 24V DC applications.
Automotive rated
Replaces electromechanical relays and discrete circuits
Linear mode capability - the current-limiting protection circuitry
is designed to de-activate at low VDS, in order not to
compromise the load current during normal operation. The
design max. DC operating current is therefore determined by
the thermal capability of the package/board combination, rather
than by the protection circuitry.
Note: This does not compromise the product's ability to self-
protect during short-circuit load conditions
The current limit is programmable via an external resistor Rprog
connected between Status and IN pins
Status pin voltage reflects the gate drive being applied internally
to the power MOSFET
With VIN = 5V and Rprog = 24kΩ:
ƒ Status voltage: 5V indicates normal operation.
ƒ Status voltage: (2-3)V indicates that the device is in
current-limiting mode.
ƒ Status voltage < 1V indicates that the device is in thermal
shutdown.
Features and Benefits
Current Limit Programmable Via External Resistor
Status Pin (analog status indication)
Logic Level Input
Short Circuit Protection with Auto Restart
Over Voltage Protection (active clamp)
Thermal Shutdown with Auto Restart
Over-Current Protection
Input Protection (ESD)
Load Dump Protection (actively protects load)
High Continuous Current Rating
Qualified to AEC-Q101 Standards for High Reliability
PPAP Capable
Lead-Free Finish; RoHS compliant (Note 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Mechanical Data
Case: SOT223
Case Material: Molded Plastic, “Green” Molding Compound UL
Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Matte Tin Finish
Weight: 0.112 grams (approximate)
SOT223
Top View
ote: RPROG must be connected between the Status and IN pins
N
Notes:
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. Automotive products are AEC-Q100 qualified and are PPAP capable. Automotive, AEC-Q100 and standard products are electrically and thermally
the same, except where specified. For more information, please refer to http://www.diodes.com/quality/product_compliance_definitions/.
IntelliFET is a trademark of Diodes Incorporated.
ZXMS6003GQ
Document number: DS33607 Rev. 1 - 2
1 of 9
www.diodes.com
April 2014
© Diodes Incorporated

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ZXMS6003GQ equivalent
ZXMS6003GQ
Electrical Characteristics (@Tamb = +25°C, unless otherwise stated.)
Parameter
Static Characteristics
Symbol
Min
Typ
Max Unit
Conditions
Drain-Source Clamp Voltage
Off State Drain Current
Off State Drain Current
Input Threshold Voltage (Note 9)
Input Current
Input Current
Input Current
Static Drain-Source On-State
Resistance
VDS(AZ)
60
70
75
V ID = 10mA
IDSS — 0.1 3 µA VDS = 12V, VIN = 0V
IDSS — 3 15 µA VDS = 32V, VIN = 0V
VIN(th)
1 2.1 —
V VDS = VGS, ID = 1mA
IIN — 0.7 1.2 mA VIN = +5V
IIN — 1.5 2.7 mA VIN = +7V
IIN
—4
7 mA VIN = +10V
RDS(ON) — 520 675 mΩ VIN = 5V, ID = 0.2A
Static Drain-Source On-State
Resistance
RDS(ON) — 385 500 mΩ VIN = 10V, ID = 0.5A
Current Limit (Note 10)
Current Limit (Note 10)
Dynamic Characteristics
ID(LIM)
ID(LIM)
0.2 0.3 0.4
0.7 0.9 1.2
A VIN = 5V, VDS = 10V RPROG = 20k
A VIN = 10V, VDS = 10V, RPROG = 20k
Turn-On Time (VIN to 90% ID)
tON
3
10
µs
RPROG = 20k, RL = 22, VIN = 0 to 10V,
VDD = 12V
Turn-Off Time (VIN to 90% ID)
TOFF
13
20
µs
RPROG = 20k, RL = 22, VIN = 10V to 0V,
VDD = 12V
Slew Rate On (70 to 50% VDD)
DVDS/dtON
8
20
V/µs
RPROG= 20k, RL = 22, VIN = 0 to 10V,
VDD = 12V
Slew Rate Off (50 to 70% VDD)
DVDS/dtON
3.2
10
V/µs
RPROG = 20k, RL = 22, VIN = 10V to 0V,
VDD = 12V
Protection Functions (Note 10)
Required Input Voltage for Over
Temperature Protection
VPROT 4.5 — — V
Thermal Overload Trip Temperature
Thermal hysteresis
Unclamped Single Pulse Inductive
Energy TJ = +25°C
Unclamped Single Pulse Inductive
Energy TJ = +150°C
Status Flag
TJT
EAS
EAS
150 175
—1
°C
°C
550 —
— mJ ID(ISO) = 0.7A, VDD = 32V
200 —
— mJ ID(ISO) = 0.7A, VDD = 32V
Normal Operation
Current Limit Operating
Thermal Shutdown Activated
Normal Operation
Current Limit Operation
Thermal Shutdown Activated
Inverse Diode
VSTATUS — 4.95 —
VSTATUS
2.5
VSTATUS
0.2
1
VSTATUS
8
VSTATUS
3
VSTATUS — 0.35
1
V VIN = 5V
V VIN = 5V
V VIN = 5V
V VIN = 10V
V VIN = 10V
V VIN = 10V
Source Drain Voltage
VSD — — 1 V VIN = 0V, -ID = 1.4A,
Notes:
9. Protection features may operate outside spec for VIN<4.5V
10. The drain current is limited to a reduced value when Vds exceeds a safe level.
11. Integrated protection functions are designed to prevent IC destruction under fault conditions described in the datasheet. Fault conditions are
considered as “outside” normal operating range. Protection functions are not designed for continuous, repetitive operation.
IntelliFET is a trademark of Diodes Incorporated.
ZXMS6003GQ
Document number: DS33607 Rev. 1 - 2
5 of 9
www.diodes.com
April 2014
© Diodes Incorporated


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