PDF ZXMS6004DT8Q Data sheet ( Hoja de datos )

Número de pieza	ZXMS6004DT8Q
Descripción	N-CHANNEL SELF PROTECTED ENHANCEMENT MODE MOSFET
Fabricantes	Diodes
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No Preview Available ! ZXMS6004DT8Q 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET® MOSFET Product Summary  Continuous Drain Source Voltage VDS = 60V  On-State Resistance 500mΩ  Nominal Load Current (VIN = 5V) 1.2A  Clamping Energy 210mJ Description The ZXMS6004DT8Q is a dual self protected low side MOSFET with logic level input. It integrates over-temperature, over-current, over- voltage (active clamp) and ESD protected logic level functionality. The ZXMS6004DT8Q is ideal as a general purpose switch driven from 3.3V or 5V microcontrollers in harsh environments where standard MOSFETs are not rugged enough. Applications  Two completely isolated independent channels  Especially suited for loads with a high in-rush current such as lamps and motors  All types of resistive, inductive and capacitive loads in switching applications  μC compatible power switch for 12V and 24V DC applications.  Automotive rated  Replaces electromechanical relays and discrete circuits  Linear Mode capability - the current-limiting protection circuitry is designed to de-activate at low VDS to minimise on state power dissipation. The maximum DC operating current is therefore determined by the thermal capability of the package/board combination, rather than by the protection circuitry. This does not compromise the product’s ability to self-protect at low VDS. SM-8 Features and Benefits  Compact Dual Package  Low Input Current  Logic Level Input (3.3V and 5V)  Short Circuit Protection with Auto Restart  Over Voltage Protection (active clamp)  Thermal Shutdown with Auto Restart  Over-Current Protection  Input Protection (ESD)  High Continuous Current Rating  Qualified to AEC-Q101 Standards for High Reliability  PPAP Capable  Lead-Free Finish; RoHS compliant (Note 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3) Mechanical Data  Case: SM-8  Case Material: Molded Plastic, “Green” Molding Compound UL Flammability Classification Rating 94V-0  Moisture Sensitivity: Level 1 per J-STD-020  Terminals: Matte Tin Finish  Weight: 0.117 grams (approximate) 1 IN1 S1 IN2 S2 D1 D1 D2 D2 Top View Top view Pin-Out Ordering Information Notes: Product ZXMS6004DT8QTA Marking ZXMS6004D Reel size (inches) 7 Tape width (mm) 12 Quantity per reel 1,000 units 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally the same, except where specified. For more information, please refer to http://www.diodes.com/quality/product_compliance_definitions/. 5. For packaging details, go to our website at http://www.diodes.com/products/packages.html. IntelliFET is a registered trademark of Diodes Incorporated. ZXMS6004DT8Q Document number: DS32245 Rev. 2 -1 1 of 9 www.diodes.com April 2014 © Diodes Incorporated 1 page ZXMS6004DT8Q Electrical Characteristics (@Tamb = +25°C, unless otherwise stated.) Characteristic Symbol Min Typ Max Unit Test Condition Static Characteristics Drain-Source Clamp Voltage VDS(AZ) 60 65 70 V ID = 10mA Off State Drain Current IDSS — — — — 0.5 1 µA VDS = 12V, VIN = 0V VDS = 36V, VIN = 0V Input Threshold Voltage VIN(th) 0.7 1 1.5 V VDS = VGS, ID = 1mA Input Current IIN — — 60 100 120 200 µA VIN = +3V VIN = +5V Input Current while Over Temperature Active — — — 220 µA VIN = +5V Static Drain-Source On-State Resistance RDS(on) — — 400 350 600 500 mΩ VIN = +3V, ID = 1A VIN = +5V, ID = 1A Continuous Drain Current (Notes 6 & 10) Continuous Drain Current (Notes 6 & 9) 0.9 — — VIN = 3V; TA = +25°C ID 1 1.1 — — — — A VIN = 5V; TA = +25°C VIN = 3V; TA = +25°C 1.2 — — VIN = 5V; TA = +25°C Current Limit (Note 12) Dynamic Characteristics ID(LIM) 0.7 1 1.7 2.2 — — A VIN = +3V VIN = +5V Turn On Delay Time td(on) — 5 — µs Rise Time Turn Off Delay Time tr — 10 — µs VDD = 12V, ID = 0.5A, td(off) — 45 — µs VGS = 5V Fall Time Over-Temperature Protection ff — 15 — µs Thermal Overload Trip Temperature (Note 13) TJT 150 175 Thermal Hysteresis (Note 13) — — 10 — — °C °C — — Notes: 12. The drain current is restricted only when the device is in saturation (see graph “Typical Output Characteristic”). This allows the device to be used in the fully on state without interference from the current limit. The device is fully protected at all drain currents, as the low power dissipation generated outside saturation makes current limit unnecessary. 13. Over-temperature protection is designed to prevent device destruction under fault conditions. Fault conditions are considered as “outside” normal operating range, so this part is not designed to withstand over-temperature for extended periods. IntelliFET is a registered trademark of Diodes Incorporated. ZXMS6004DT8Q Document number: DS32245 Rev. 2 -1 5 of 9 www.diodes.com April 2014 © Diodes Incorporated 5 Page

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