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PDF ZXMS6005DGQ Data sheet ( Hoja de datos )
| Número de pieza | ZXMS6005DGQ | |
| Descripción | N-CHANNEL SELF PROTECTED ENHANCEMENT MODE MOSFET | |
| Fabricantes | Diodes | |
| Logotipo |  |
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ZXMS6005DGQ
60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE
INTELLIFET ® MOSFET
Product Summary
Features and Benefits
Continuous Drain Source Voltage 60V
On-State Resistance
200mΩ
Nominal Load Current (VIN = 5V) 2.8A
Clamping Energy
490mJ
Description
The ZXMS6005DGQ is a self protected low side MOSFET with logic
level input. It integrates over-temperature, over-current, over-voltage
(active clamp) and ESD protected logic level functionality. The
ZXMS6005DGQ is ideal as a general purpose switch driven from
3.3V or 5V microcontrollers in harsh environments where standard
MOSFETs are not rugged enough.
Compact High Power Dissipation Package
Low Input Current
Logic Level Input (3.3V and 5V)
Short Circuit Protection with Auto Restart
Over Voltage Protection (Active Clamp)
Thermal Shutdown with Auto Restart
Over-Current Protection
Input Protection (ESD)
High Continuous Current Rating
Lead-Free Finish; RoHS compliant (Note 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
PPAP Capable (Note 4)
Applications
Lamp Driver
Motor Driver
Relay Driver
Solenoid Driver
SOT-223
Mechanical Data
Case: SOT-223
Case Material: Molded Plastic, “Green” Molding Compound
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Matte Tin Finish
Weight: 0.112 grams (approximate)
D
S
IN D D
Top View
S
Device symbol
IN
Top view
Pin Out
Ordering Information (Note 5)
Product
ZXMS6005DGQTA
Marking
ZXMS6005D
Reel size (inches)
7
Tape width (mm)
12
Quantity per reel
1,000
Notes:
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally
the same, except where specified. For more information, please refer to http://www.diodes.com/quality/product_compliance_definitions/.
5. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
ZXMS
6005D
ZXMS6005D = Product type Marking Code
IntelliFET is a registered trademark of Diodes Incorporated.
ZXMS6005DGQ
Document number: DS37133 Rev. 1 - 2
1 of 9
www.diodes.com
April 2014
© Diodes Incorporated
1 page  
ZXMS6005DGQ
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Static Characteristics
Drain-Source Clamp Voltage
Off State Drain Current
Input Threshold Voltage
Input Current
Input Current While Over Temperature Active
Static Drain-Source On-State Resistance
Continuous Drain Current (Note 6)
Continuous Drain Current (Note 7)
Current Limit (Note 8)
Dynamic Characteristics
Turn On Delay Time
Rise Time
Turn Off Delay Time
Fall Time
Over-Temperature Protection
Thermal Overload Trip Temperature (Note 9)
Thermal Hysteresis (Note 9)
Symbol Min
VDS(AZ)
IDSS
VIN(th)
IIN
–
RDS(on)
ID
ID(LIM)
60
–
–
0.7
–
–
–
–
–
1.4
1.6
1.9
2.0
2.2
3.3
td(on)
tr
td(off)
ff
–
–
–
–
TJT +150
ff –
Typ
65
–
–
1
60
120
–
170
150
–
–
–
–
5
7
6
14
34
19
+175
+10
Max
70
1
2
1.5
100
200
300
250
200
–
–
–
–
–
–
–
–
–
–
–
–
Unit Test Condition
V ID = 10mA
μA VDS = 12V, VIN = 0V
VDS = 36V, VIN = 0V
V VDS = VGS, ID = 1mA
μA VIN = +3V
VIN = +5V
μA VIN = +5V
mΩ VIN = +3V, ID = 1A
VIN = +5V, ID = 1A
VIN = 3V; TA = +25°C
A VIN = 5V; TA = +25°C
VIN = 3V; TA = +25°C
VIN = 5V; TA = +25°C
A VIN = +3V
VIN = +5V
μs VDD = 12V, ID = 1A, VGS = 5V
°C –
°C –
Notes:
8. The drain current is restricted only when the device is in saturation (see graph ‘typical output characteristic’). This allows the device to be used in the fully
on state without interference from the current limit. The device is fully protected at all drain currents, as the low power dissipation generated outside
saturation makes current limit unnecessary.
9. Over-temperature protection is designed to prevent device destruction under fault conditions. Fault conditions are considered as “outside” normal
operating range, so this part is not designed to withstand over-temperature for extended periods.
IntelliFET is a registered trademark of Diodes Incorporated.
ZXMS6005DGQ
Document number: DS37133 Rev. 1 - 2
5 of 9
www.diodes.com
April 2014
© Diodes Incorporated
5 Page | ||
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