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PDF ZXMS6005SGQ Data sheet ( Hoja de datos )
| Número de pieza | ZXMS6005SGQ | |
| Descripción | N-CHANNEL SELF PROTECTED ENHANCEMENT MODE MOSFET | |
| Fabricantes | Diodes | |
| Logotipo |  |
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ZXMS6005SGQ
60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE
INTELLIFET ® MOSFET
Product Summary
Continuous Drain Source Voltage VDS = 60V
On-State Resistance
200mΩ
Nominal Load Current (VIN = 5V)
2A
Clamping Energy
480mJ
Description
The ZXMS6005SGQ is a self protected low side MOSFET with logic
level input. It integrates over-temperature; over-current, over-voltage
(active clamp) and ESD protected logic level functionality. The
ZXMS6005SGQ is ideal as a general purpose switch driven from 3.3V
or 5V microcontrollers in harsh environments where standard
MOSFETs are not rugged enough.
Applications
Especially suited for loads with a high in-rush current such as
lamps and motors
All types of resistive, inductive and capacitive loads in switching
applications
μC compatible power switch for 12V DC applications.
Automotive rated
Replaces electromechanical relays and discrete circuits
Linear Mode capability - the current-limiting protection circuitry
is designed to de-activate at low VDS to minimize on state power
dissipation. The maximum DC operating current is therefore
determined by the thermal capability of the package/board
combination, rather than by the protection circuitry. This does
not compromise the product’s ability to self- protect at low VDS.
Features and Benefits
Compact High Power Dissipation Package
Low Input Current
Logic Level Input (3.3V and 5V)
Short Circuit Protection with Auto Restart
Over Voltage Protection (Active Clamp)
Thermal Shutdown with Auto Restart
Over-Current Protection
Input Protection (ESD)
High Continuous Current Rating
Lead-Free Finish; RoHS compliant (Note 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
PPAP Capable (Note 4)
Mechanical Data
Case: SOT-223
Case Material: Molded Plastic, “Green” Molding Compound
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Matte Tin Finish
Weight: 0.112 grams (approximate)
SOT-223
Top View
Top view
Pin Out
Ordering Information
Product
ZXMS6005SGQTA
Marking
ZXMS6005S
Reel size (inches)
7
Tape width (mm)
12
Quantity per reel
1,000 units
Notes:
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally
the same, except where specified. For more information, please refer to http://www.diodes.com/quality/product_compliance_definitions/.
5. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
ZXMS
6005S
ZXMS6005S = Product type Marking Code
IntelliFET is a registered trademark of Diodes Incorporated.
ZXMS6005SGQ
Document number: DS32249 Rev. 1 - 2
1 of 8
www.diodes.com
April 2014
© Diodes Incorporated
1 page  
Typical Characteristics
ZXMS6005SGQ
9
8
5V 4.5V
TAT=A 2=5°2C5°C
7 4V
6 3.5V
5 3V
4 2.5V
3 2V
2 VIN
1 1.5V
0
0 1 2 3 4 5 6 7 8 9 10 11 12
VDS Drain-Source Voltage (V)
Typical Output Characteristic
ID = 1A
0.4
0.2 TTJ=J 1=5105°C0°C
TTJJ== 2255°°CC
0.0
2.0 2.5 3.0 3.5 4.0 4.5
VIN Input Voltage (V)
On-Resistance vs Input Voltage
5.0
0.40
0.35
0.30
0.25
V = 3V
IN
0.20
0.15
0.10
V = 5V
IN
0.05
0.00
-75 -50 -25 0 25 50 75 100 125 150
TJ Junction Temperature (°(C°C))
On-Resistance vs Temperature
120
100
80
60
40
20
0
01234
VIN Input Voltage (V)
Input Current vs Input Voltage
5
1.4
V =V
1.3
IN DS
ID = 1mA
1.2
1.1
1.0
0.9
0.8
-75 -50 -25 0 25 50 75 100 125 150
TJ Junction Temperature (°(C°C))
Threshold Voltage vs Temperature
10
TTJ=J=115500°°CC
1
0.1 TJ=T2J=5°2C5°C
0.01
0.4 0.6 0.8 1.0 1.2
VSD Source-Drain Voltage (V)
Reverse Diode Characteristic
IntelliFET is a registered trademark of Diodes Incorporated.
ZXMS6005SGQ
Document number: DS32249 Rev. 1 - 2
5 of 8
www.diodes.com
April 2014
© Diodes Incorporated
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet ZXMS6005SGQ.PDF ] | |
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