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6N40K-TA PDF даташит

Спецификация 6N40K-TA изготовлена ​​​​«Unisonic Technologies» и имеет функцию, называемую «N-CHANNEL POWER MOSFET».

Детали детали

Номер произв 6N40K-TA
Описание N-CHANNEL POWER MOSFET
Производители Unisonic Technologies
логотип Unisonic Technologies логотип 

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6N40K-TA Даташит, Описание, Даташиты
UNISONIC TECHNOLOGIES CO., LTD
6N40K-TA
Preliminary
6A, 400V N-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC 6N40K-TA is an N-Channel enhancement mode
power MOSFET using UTC’s perfect planar stripe, DMOS
technology to provide customers with superior switching
performance and minimum on-state resistance. It also can
withstand high energy pulse in the avalanche and commutation
mode.
The UTC 6N40K-TA is generally used in applications , such as
electronic lamp ballasts based on half bridge topology and high
efficiency switched mode power supplies.
FEATURES
* RDS(ON)<0.6@ VGS=10V, ID=3A
* Fast switching speed
* Improved dv/dt capability
SYMBOL
Power MOSFET
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
Package
6N40KL-TA3-T
6N40KG-TA3-T
TO-220
6N40KL-TF1-T
6N40KG-TF1-T
TO-220F1
Note: Pin Assignment: G: Gate D: Drain S: Source
Pin Assignment
123
GD S
GD S
6N40KL-TA3-T
(1)Packing Type
(1) T: Tube
Packing
Tube
Tube
(2)Package Type
(2) TA3: TO-220, TF1: TO-220F1
(3)Green Package
(3) L: Lead Free, G: Halogen Free and Lead Free
MARKING
www.unisonic.com.tw
Copyright © 2015 Unisonic Technologies Co., Ltd
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6N40K-TA Даташит, Описание, Даташиты
6N40K-TA
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
Gate-Source Voltage
VDSS 400 V
VGSS ±30 V
Avalanche Current (Note 2)
Drain Current
Continuous
Pulsed (Note 2)
Avalanche Energy
Single Pulsed (Note 3)
Repetitive (Note 2)
Peak Diode Recovery dv/dt (Note 4)
IAR
ID
IDM
EAS
EAR
dv/dt
6
6 (Note 5)
24(Note 5)
240
8.5
4.5
A
A
A
mJ
mJ
V/ns
Power Dissipation
TO-220
TO-220F1
PD
73
38
W
Junction Temperature
Storage Temperature
TJ
TSTG
+150
-55 ~ +150
°C
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by maximum junction temperature
3. L=13.5mH, IAS=6A, VDD= 50V, RG=25, Starting TJ=25°C
4. ISD 6A, di/dt 200A/μs, VDD BVDSS, Starting TJ=25°C
5. Drain current limited by maximum junction temperature
THERMAL DATA
PARAMETER
Junction to Ambient
TO-220/TO-220F1
Junction to Case
TO-220
TO-220F1
SYMBOL
θJA
θJC
RATINGS
62.5
1.71
3.31
UNIT
°C/W
°C/W
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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6N40K-TA Даташит, Описание, Даташиты
6N40K-TA
Preliminary
Power MOSFET
ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS VGS=0V, ID=250µA
Breakdown Voltage Temperature Coefficient
BVDSS/TJ
ID=250μA,
Referenced
to
25°C
Drain-Source Leakage Current
IDSS
VDS=400V, VGS=0V
VDS=320V, TJ=125°C
Gate-Source Leakage Current
Forward
Reverse
IGSS
VDS=0V ,VGS=+30V
VDS=0V ,VGS=-30V
ON CHARACTERISTICS
Gate Threshold Voltage
Drain-Source On-State Resistance
VGS(TH)
RDS(ON)
VDS=VGS, ID=250µA
VGS=10V, ID=3A
DYNAMIC PARAMETERS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
CISS
COSS
CRSS
VDS=25V,VGS=0V,f=1.0MHz
SWITCHING PARAMETERS
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-ON Delay Time
Turn-ON Rise Time
Turn-OFF Delay Time
Turn-OFF Fall Time
QG
QGS
QGD
tD(ON)
tR
tD(OFF)
tF
VDS=50V, VGS=10V, ID=1.3A
(Note 1,2)
VDD=30V, ID=0.5A, RG=25
VGS=10V (Note 1,2)
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
IS
Maximum Body-Diode Pulsed Current
ISM
Drain-Source Diode Forward Voltage
VSD IS =6A, VGS=0V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
trr VGS=0V, IS=6A, VR=50V
QRR dIF/dt=100A/μs (Note 1)
Notes: 1. Pulse Test : Pulse width 300μs, Duty cycle 2%
2. Essentially independent of operating temperature
MIN
400
2.0
TYP MAX UNIT
V
0.54 V/°C
1
10
+100
-100
µA
µA
nA
nA
4.0 V
0.6
490 pF
95 pF
8.4 pF
65 nC
6.2 nC
8.8 nC
60 ns
65 ns
105 ns
44 ns
6
24
1.4
300
1.75
A
A
V
ns
μC
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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