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7NM65 PDF даташит

Спецификация 7NM65 изготовлена ​​​​«Unisonic Technologies» и имеет функцию, называемую «N-CHANNEL SUPER-JUNCTION MOSFET».

Детали детали

Номер произв 7NM65
Описание N-CHANNEL SUPER-JUNCTION MOSFET
Производители Unisonic Technologies
логотип Unisonic Technologies логотип 

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7NM65 Даташит, Описание, Даташиты
UNISONIC TECHNOLOGIES CO., LTD
7NM65
Preliminary
7A, 650V N-CHANNEL
SUPER-JUNCTION MOSFET
DESCRIPTION
The UTC 7NM65 is an Super Junction MOSFET Structure. It
uses UTC advanced planar stripe, DMOS technology to provide
customers perfect switching performance, minimal on-state
resistance.
The UTC 7NM65 is universally applied in electronic lamp
ballasts based on half bridge topology, high efficiency switched
mode power supplies, active power factor correction, etc.
FEATURES
* Low drain-source on-resistance: RDS(ON) < 0.9 (max.)
by using Super Junction Structure
* Fast switching capability
* Avalanche energy tested
* Improved dv/dt capability, high ruggedness
SYMBOL
Power MOSFET
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
7NM65L-TF3-T
7NM65G-TF3-T
7NM65L-TA3-T
7NM65G-TA3-T
7NM65L-TM3-T
7NM65G-TM3-T
7NM65L-TN3-R
7NM65G-TN3-R
Note: Pin Assignment: G: Gate D: Drain S: Source
Package
TO-220
TO-220F
TO-251
TO-252
Pin Assignment
123
GDS
GDS
GDS
GDS
Packing
Tube
Tube
Tube
Tape Reel
www.unisonic.com.tw
Copyright © 2015 Unisonic Technologies Co., Ltd
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7NM65 Даташит, Описание, Даташиты
7NM65
MARKING
Preliminary
Power MOSFET
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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7NM65 Даташит, Описание, Даташиты
7NM65
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS 650 V
Gate-Source Voltage
Avalanche Current (Note 2)
VGSS ±30 V
IAR 2 A
Drain Current
Continuous
Pulsed (Note 2)
ID
IDM
7A
28 A
Avalanche Energy
Single Pulsed (Note 3)
Peak Diode Recovery dv/dt (Note 4)
EAS
dv/dt
60 mJ
4.5 V/ns
Power Dissipation
TO-220F/TO-220F1
TO-251/TO-252
PD
48
60
W
Junction Temperature
Storage Temperature
TJ
TSTG
+150
-55 ~ +150
°C
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by maximum junction temperature
3. L = 30mH, IAS = 2A, VDD = 50V, RG = 25 , Starting TJ = 25°C
4. ISD7A, di/dt200A/μs, VDDBVDSS, Starting TJ = 25°C
THERMAL DATA
PARAMETER
Junction to Ambient
TO-220F/TO-220F1
TO-251/TO-252
Junction to Case
TO-220F/TO-220F1
TO-251/TO-252
SYMBOL
θJA
θJC
RATINGS
62.5
110
2.6
2.08
UNIT
°C/W
°C/W
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R205-042.b










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Номер в каталогеОписаниеПроизводители
7NM60600V N-CHANNEL POWER MOSFETUNISONIC TECHNOLOGIES
UNISONIC TECHNOLOGIES
7NM65N-CHANNEL SUPER-JUNCTION MOSFETUnisonic Technologies
Unisonic Technologies

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