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PDF NCE0102Z Data sheet ( Hoja de datos )

Número de pieza NCE0102Z
Descripción N-Channel Enhancement Mode Power MOSFET
Fabricantes NCE Power Semiconductor 
Logotipo NCE Power Semiconductor Logotipo



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No Preview Available ! NCE0102Z Hoja de datos, Descripción, Manual

http://www.ncepower.com
Pb Free Product
NCE0102Z
NCE N-Channel Enhancement Mode Power MOSFET
Description
The NCE0102Z uses advanced trench technology and
design to provide excellent RDS(ON) with low gate charge. It
can be used in a wide variety of applications.
D
G
General Features
VDS = 100V,ID = 2A
RDS(ON) <240m@ VGS=10V (Typ:210m)
High density cell design for ultra low Rdson
Fully characterized avalanche voltage and current
Excellent package for good heat dissipation
S
Schematic diagram
Application
Power switching application
Hard switched and high frequency circuits
Uninterruptible power supply
TO-92 view
Package Marking and Ordering Information
Device Marking
Device
Device Package
0102Z
NCE0102Z
TO-92
Reel Size
-
Tape width
-
Quantity
-
Absolute Maximum Ratings (TA=25unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
Drain Current-Pulsed (Note 1)
ID
IDM
Maximum Power Dissipation
PD
Operating Junction and Storage Temperature Range
TJ,TSTG
Limit
100
±20
2
5
1.25
-55 To 150
Unit
V
V
A
A
W
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient (Note 2)
RθJA
100 /W
Electrical Characteristics (TA=25unless otherwise noted)
Parameter
Symbol
Condition
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
BVDSS
IDSS
VGS=0V ID=250μA
VDS=100V,VGS=0V
Min Typ Max Unit
100 110
--
-
1
V
μA
Wuxi NCE Power Semiconductor Co., Ltd
Page 1
v1.0

1 page




NCE0102Z pdf
http://www.ncepower.com
NCE0102Z
Pb-Free Product
Vds Drain-Source Voltage (V)
Figure 7 Capacitance vs Vds
TJ-Junction Temperature()
Figure 9 BVDSS vs Junction Temperature
Vds Drain-Source Voltage (V)
Figure 8 Safe Operation Area
TJ-Junction Temperature()
Figure 10 Power De-rating
Square Wave Pluse Duration(sec)
Figure 11 Normalized Maximum Transient Thermal Impedance
Wuxi NCE Power Semiconductor Co., Ltd
Page 5
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