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Número de pieza | NCE0108AS | |
Descripción | N-Channel Enhancement Mode Power MOSFET | |
Fabricantes | NCE Power Semiconductor | |
Logotipo | ||
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Pb Free Product
NCE0108AS
NCE N-Channel Enhancement Mode Power MOSFET
Description
The NCE0108AS uses advanced trench technology and
design to provide excellent RDS(ON) with low gate charge. It
can be used in a wide variety of applications.
General Features
● VDS = 100V,ID =8A
RDS(ON) < 28mΩ @ VGS=10V
(Typ:22mΩ)
● Special process technology for high ESD capability
● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current
Schematic diagram
Application
● DC/DC Primary Side Switch
● Telecom/Server
● Synchronous Rectification
Marking and pin assignment
SOP-8 top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
NCE0108AS
NCE0108AS
SOP-8
Reel Size
Ø330mm
Tape width
12mm
Quantity
2500 units
Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
ID
Drain Current-Continuous(TC=100℃)
ID (100℃)
Pulsed Drain Current
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
IDM
PD
TJ,TSTG
Limit
100
±20
8
5.6
57
2.6
-55 To 150
Unit
V
V
A
A
A
W
℃
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient (Note 2)
RθJA
48 ℃/W
Wuxi NCE Power Semiconductor Co., Ltd
Page 1
v1.0
1 page http://www.ncepower.com
Pb Free Product
NCE0108AS
Vds Drain-Source Voltage (V)
Figure 7 Capacitance vs Vds
TJ-Junction Temperature(℃)
Figure 9 Power De-rating
Vds Drain-Source Voltage (V)
Figure 8 Safe Operation Area
TJ-Junction Temperature(℃)
Figure 10 Current De-rating
Square Wave Pluse Duration(sec)
Figure 11 Normalized Maximum Transient Thermal Impedance
Wuxi NCE Power Semiconductor Co., Ltd
Page 5
v1.0
5 Page |
Páginas | Total 7 Páginas | |
PDF Descargar | [ Datasheet NCE0108AS.PDF ] |
Número de pieza | Descripción | Fabricantes |
NCE0108AS | N-Channel Enhancement Mode Power MOSFET | NCE Power Semiconductor |
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