NCE85H21C PDF даташит
Спецификация NCE85H21C изготовлена «NCE Power Semiconductor» и имеет функцию, называемую «N-Channel Enhancement Mode Power MOSFET». |
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Детали детали
Номер произв | NCE85H21C |
Описание | N-Channel Enhancement Mode Power MOSFET |
Производители | NCE Power Semiconductor |
логотип |
8 Pages
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Pb Free Product
NCE85H21C
NCE N-Channel Enhancement Mode Power MOSFET
Description
The NCE85H21C uses advanced trench technology and
design to provide excellent RDS(ON) with low gate charge. It can
be used in automotive applications and a wide variety of other
applications.
General Features
● VDSS =85V,ID =210A
RDS(ON) < 4mΩ @ VGS=10V
● Good stability and uniformity with high EAS
● Special process technology for high ESD capability
● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current
● Excellent package for good heat dissipation
Application
● Automotive applications
● Hard switched and high frequency circuits
● Uninterruptible power supply
Schematic diagram
Marking and pin assignment
100% UIS TESTED!
100% ∆Vds TESTED!
TO-220-3L top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
NCE85H21C
NCE85H21C
TO-220
Reel Size
-
Tape width
-
Quantity
-
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDSS
Gate-Source Voltage
VGS
Drain Current-Continuous
ID
Drain Current-Continuous(TC=100℃)
ID (100℃)
Pulsed Drain Current
Maximum Power Dissipation
IDM
PD
Derating factor
Single pulse avalanche energy (Note 3)
Peak Diode Recovery dv/dt (Note 4)
EAS
dv/dt
Operating Junction and Storage Temperature Range
TJ,TSTG
Limit
85
±20
210(Note5)
148
850
310
2.07
2200
5
-55 To 175
Unit
V
V
A
A
A
W
W/℃
mJ
V/ns
℃
Wuxi NCE Power Semiconductor Co., Ltd
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Pb Free Product
NCE85H21C
Thermal Characteristic
Thermal Resistance,Junction-to-Case (Note 1)
RθJC
0.48 ℃/W
Electrical Characteristics (TC=25℃unless otherwise noted)
Parameter
Symbol
Condition
Min Typ Max Unit
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
BVDSS
IDSS
IGSS
VGS=0V ID=250μA
VDS=85V,VGS=0V
VGS=±20V,VDS=0V
85 -
-
V
- - 1 μA
- - ±200 nA
On Characteristics
Gate Threshold Voltage
VGS(th)
VDS=VGS,ID=250μA
2 3.2
4
V
Drain-Source On-State Resistance
RDS(ON)
VGS=10V, ID=40A
- 3.6
4
mΩ
Forward Transconductance
gFS
VDS=10V,ID=20A
35 -
-
S
Dynamic Characteristics
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Clss
Coss
VDS=25V,VGS=0V,
F=1.0MHz
- 7200
- 640
-
-
PF
PF
Crss
- 487
-
PF
Switching Characteristics
Turn-on Delay Time
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VDD=38V,ID=40A
VGS=10V,RGEN=1.2Ω
(Note2)
VDS=30V,ID=30A,
VGS=10V(Note2)
- 15
- 124
- 84
- 78
- 180
- 34.5
- 70
-
-
-
-
-
-
-
nS
nS
nS
nS
nC
nC
nC
Drain-Source Diode Characteristics
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
VSD
VGS=0V,IS=40A
- - 1.2
V
trr
TJ = 25°C, IF = 40A
- 58
-
nS
Qrr
di/dt = 100A/μs(Note2)
- 87
-
nC
Forward Turn-On Time
ton Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
1. Surface Mounted on FR4 Board, t ≤ 10 sec.
2. Pulse Test: Pulse Width ≤ 400μs, Duty Cycle ≤ 2%.
3. EAS condition:Tj=25℃,VDD=42.5V,VG=10V,L=0.5mH,Rg=25Ω
4. ISD≤125A, di/dt≤260A/μs, VDD≤V(BR)DSS,TJ ≤175°C
Wuxi NCE Power Semiconductor Co., Ltd
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Test Circuit
1) EAS test circuit
Pb Free Product
NCE85H21C
2) Gate charge test circuit
3) Switch time test circuit
Wuxi NCE Power Semiconductor Co., Ltd
Page 3
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Номер в каталоге | Описание | Производители |
NCE85H21 | NCE N-Channel Enhancement Mode Power MOSFET | NCE Power |
NCE85H21C | N-Channel Enhancement Mode Power MOSFET | NCE Power Semiconductor |
NCE85H21T | NCE N-Channel Enhancement Mode Power MOSFET | NCE Power |
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