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PDF NCE85H21TC Data sheet ( Hoja de datos )
| Número de pieza | NCE85H21TC | |
| Descripción | N-Channel Enhancement Mode Power MOSFET | |
| Fabricantes | NCE Power Semiconductor | |
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http://www.ncepower.com
Pb Free Product
NCE85H21TC
NCE N-Channel Enhancement Mode Power MOSFET
Description
The NCE85H21TC uses advanced trench technology and
design to provide excellent RDS(ON) with low gate charge. It can
be used in automotive applications and a wide variety of other
applications.
General Features
● VDSS =85V,ID =210A
RDS(ON) < 3.9mΩ @ VGS=10V
● Good stability and uniformity with high EAS
● Special process technology for high ESD capability
● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current
● Excellent package for good heat dissipation
Schematic diagram
Application
● Automotive applications
● Hard switched and high frequency circuits
● Uninterruptible power supply
100% UIS TESTED!
100% ∆Vds TESTED!
Marking and pin assignment
TO-247 top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
NCE85H21TC
NCE85H21TC
TO-247
Reel Size
-
Tape width
-
Quantity
-
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDSS
Gate-Source Voltage
VGS
Drain Current-Continuous
ID
Drain Current-Continuous(TC=100℃)
ID (100℃)
Pulsed Drain Current
Maximum Power Dissipation
IDM
PD
Derating factor
Single pulse avalanche energy (Note 3)
Peak Diode Recovery dv/dt (Note 4)
EAS
dv/dt
Operating Junction and Storage Temperature Range
TJ,TSTG
Limit
85
±20
210
150
850
330
2.2
2200
5
-55 To 175
Unit
V
V
A
A
A
W
W/℃
mJ
V/ns
℃
Wuxi NCE Power Semiconductor Co., Ltd
Page 1
v1.1
1 page  
http://www.ncepower.com
Pb Free Product
NCE85H21TC
Vds Drain-Source Voltage (V)
Figure 7 Capacitance vs Vds
TJ-Junction Temperature(℃)
Figure 9 BVDSS vs Junction Temperature
Vds Drain-Source Voltage (V)
Figure 8 Safe Operation Area
TJ-Junction Temperature(℃)
Figure 10 VGS(th) vs Junction Temperature
Square Wave Pluse Duration(sec)
Figure 11 Normalized Maximum Transient Thermal Impedance
Wuxi NCE Power Semiconductor Co., Ltd
Page 5
v1.1
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet NCE85H21TC.PDF ] | |
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