(PDF) CEP5175 Datasheet - P-Channel Enhancement Mode Field Effect Transistor

Número de pieza	CEP5175
Descripción	P-Channel Enhancement Mode Field Effect Transistor
Fabricantes	CET
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No Preview Available ! CEP5175/CEB5175 P-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES -55V, -50A, RDS(ON) = 23mΩ @VGS = 10V. RDS(ON) = 28mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. TO-220 & TO-263 package. D G S CEB SERIES TO-263(DD-PAK) G D S CEP SERIES TO-220 G D S ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage VDS -55 VGS ±20 Drain Current-Continuous @ TC = 25 C @ TC = 100 C ID -50 -32 Drain Current-Pulsed a IDM -200 Maximum Power Dissipation @ TC = 25 C - Derate above 25 C PD 96 0.77 Operating and Store Temperature Range TJ,Tstg -55 to 150 Units V V A A A W W/ C C Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol RθJC RθJA This is preliminary information on a new product in development now . Details are subject to change without notice . 1 Limit 1.3 62.5 Units C/W C/W Rev 1. 2014.Apr http://www.cetsemi.com 1 page

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PDF CEP5175 Data sheet ( Hoja de datos )