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PDF CEP6036 Data sheet ( Hoja de datos )
| Número de pieza | CEP6036 | |
| Descripción | N-Channel Enhancement Mode Field Effect Transistor | |
| Fabricantes | Chino-Excel Technology | |
| Logotipo |  |
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CEP6036/CEB6036
N-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
60V, 135A, RDS(ON) = 4.6mΩ @VGS = 10V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead-free plating ; RoHS compliant.
TO-220 & TO-263 package.
D
D
G
S
CEB SERIES
TO-263(DD-PAK)
G
D
S
CEP SERIES
TO-220
G
S
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
VDS 60
VGS ±20
Drain Current-Continuous @ TC = 25 C
@ TC = 100 C
ID
135
95
Drain Current-Pulsed a
IDM 540
Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C
PD
167
1.1
Single Pulsed Avalanche Energy d
Single Pulsed Avalanche Current d
Operating and Store Temperature Range
EAS
IAS
TJ,Tstg
400
40
-55 to 175
Units
V
V
A
A
A
W
W/ C
mJ
A
C
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Symbol
RθJC
RθJA
Limit
0.9
62.5
Units
C/W
C/W
This is preliminary information on a new product in development now .
Details are subject to change without notice .
1
Rev 1. 2012.Jun
http://www.cetsemi.com
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet CEP6036.PDF ] | |
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