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Número de pieza | CEB6106 | |
Descripción | N-Channel Enhancement Mode Field Effect Transistor | |
Fabricantes | CET | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de CEB6106 (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
No Preview Available ! CEP6106/CEB6106
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
57V, 56A ,RDS(ON) = 19mΩ @VGS = 10V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
TO-220 & TO-263 package.
D
D
G
S
CEB SERIES
TO-263(DD-PAK)
G
D
S
CEP SERIES
TO-220
G
S
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed a
Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C
VDS
VGS
ID
IDM
PD
57
±20
56
170
131
0.88
Single Pulsed Avalanche Energy d
Single Pulsed Avalanche Current d
Operating and Store Temperature Range
EAS
IAS
TJ,Tstg
117
51
-55 to 175
Units
V
V
A
A
W
W/ C
mJ
A
C
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Symbol
RθJC
RθJA
Limit
1.14
62.5
Units
C/W
C/W
Details are subject to change without notice .
1
Rev 2. 2006.Sep
http://www.cetsemi.com
1 page |
Páginas | Total 4 Páginas | |
PDF Descargar | [ Datasheet CEB6106.PDF ] |
Número de pieza | Descripción | Fabricantes |
CEB6106 | N-Channel Enhancement Mode Field Effect Transistor | CET |
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