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CEP45N10 PDF даташит

Спецификация CEP45N10 изготовлена ​​​​«CET» и имеет функцию, называемую «N-Channel Enhancement Mode Field Effect Transistor».

Детали детали

Номер произв CEP45N10
Описание N-Channel Enhancement Mode Field Effect Transistor
Производители CET
логотип CET логотип 

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CEP45N10 Даташит, Описание, Даташиты
CEP45N10/CEB45N10
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
100V, 44A, RDS(ON) = 39m@VGS = 10V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
TO-220 & TO-263 package.
D
D
G
S
CEB SERIES
TO-263(DD-PAK)
G
D
S
CEP SERIES
TO-220
G
S
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
VDS 100
VGS ±25
Drain Current-Continuous
Drain Current-Pulsed a
ID 44
IDM 176
Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C
PD
136
0.91
Single Pulsed Avalanche Energy d
Single Pulsed Avalanche Current d
Operating and Store Temperature Range
EAS
IAS
TJ,Tstg
397
43.5
-55 to 175
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Symbol
RθJC
RθJA
Limit
1.1
62.5
Units
V
V
A
A
W
W/ C
mJ
A
C
Units
C/W
C/W
Details are subject to change without notice .
1
Rev 5. 2011.Aug
http://www.cetsemi.com









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CEP45N10 Даташит, Описание, Даташиты
CEP45N10/CEB45N10
Electrical Characteristics Tc = 25 C unless otherwise noted
Parameter
Symbol
Test Condition
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics b
BVDSS
IDSS
IGSSF
IGSSR
VGS = 0V, ID = 250µA
VDS = 100V, VGS = 0V
VGS = 25V, VDS = 0V
VGS = -25V, VDS = 0V
Gate Threshold Voltage
Static Drain-Source
On-Resistance
VGS(th)
RDS(on)
VGS = VDS, ID = 250µA
VGS = 10V, ID = 21.8A
Dynamic Characteristics c
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics c
Ciss
Coss
Crss
VDS = 25V, VGS = 0V,
f = 1.0 MHz
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
td(on)
tr
td(off)
VDD = 50V, ID = 5A,
VGS = 10V, RGEN = 25
Turn-Off Fall Time
tf
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs
VDS = 80V, ID = 37A,
VGS = 10V
Qgd
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage b
IS
VSD
VGS = 0V, IS = 40A
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature
b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
c.Guaranteed by design, not subject to production testing.
d.L = 0.42mH, IAS = 43.5A, VDD = 25V, RG = 25Ω, Starting TJ = 25 C
Min
100
2
Typ
30
1955
300
35
27
19
185
35
49
10
16
Max Units
1
100
-100
V
µA
nA
nA
4V
39 m
pF
pF
pF
54 ns
38 ns
370 ns
70 ns
65 nC
nC
nC
44 A
1.5 V
2









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CEP45N10 Даташит, Описание, Даташиты
CEP45N10/CEB45N10
36
VGS=10,9V
30
24 VGS=6V
18
VGS=5V
12
6
0
0 0.5 1.0 1.5 2.0 2.5 3.0
VDS, Drain-to-Source Voltage (V)
Figure 1. Output Characteristics
100
80
60
40
20
0
0
25 C
TJ=125 C
24
-55 C
6
8
VGS, Gate-to-Source Voltage (V)
Figure 2. Transfer Characteristics
3000
2500
2000
Ciss
1500
1000
500 Coss
Crss
0
0 5 10 15 20 25
VDS, Drain-to-Source Voltage (V)
Figure 3. Capacitance
1.3 VDS=VGS
1.2 ID=250µA
1.1
1.0
0.9
0.8
0.7
0.6
-50 -25 0 25 50 75 100 125 150
TJ, Junction Temperature( C)
Figure 5. Gate Threshold Variation
with Temperature
2.6 ID=21.8A
2.2 VGS=10V
1.8
1.4
1.0
0.6
0.2
-100 -50 0 50 100 150 200
TJ, Junction Temperature( C)
Figure 4. On-Resistance Variation
with Temperature
VGS=0V
102
101
100
0.4 0.6 0.8 1.0 1.2 1.4 1.6
VSD, Body Diode Forward Voltage (V)
Figure 6. Body Diode Forward Voltage
Variation with Source Current
3










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Номер в каталогеОписаниеПроизводители
CEP45N10N-Channel Enhancement Mode Field Effect TransistorCET
CET

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