DataSheet.es    


Datasheet NDD60N360U1 Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes Category
1NDD60N360U1N-Channel Power MOSFET, Transistor

NDD60N360U1 N-Channel Power MOSFET 600 V, 360 mW Features • 100% Avalanche Tested • These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant ABSOLUTE MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol NDD Unit Drain−to−Source Voltage Gate−to−Source
ON Semiconductor
ON Semiconductor		mosfet


NDD Datasheet ( Hoja de datos ) - resultados coincidentes

N.º Número de pieza Descripción Fabricantes Catagory
1NDD01N60N-Channel Power MOSFET, Transistor

NDD01N60, NDT01N60 N-Channel Power MOSFET 600 V, 8.5 W Features • 100% Avalanche Tested • These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant ABSOLUTE MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Drain−to−Source Voltage Continuous Drain Current RqJC Stea
ON Semiconductor
ON Semiconductor		mosfet
2NDD01N60-1GN-Channel Power MOSFET, Transistor

NDD01N60, NDT01N60 N-Channel Power MOSFET 600 V, 8.5 W Features • 100% Avalanche Tested • These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant ABSOLUTE MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Drain−to−Source Voltage Continuous Drain Current RqJC Stea
ON Semiconductor
ON Semiconductor		mosfet
3NDD01N60T4GN-Channel Power MOSFET, Transistor

NDD01N60, NDT01N60 N-Channel Power MOSFET 600 V, 8.5 W Features • 100% Avalanche Tested • These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant ABSOLUTE MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Drain−to−Source Voltage Continuous Drain Current RqJC Stea
ON Semiconductor
ON Semiconductor		mosfet
4NDD02N40N-Channel Power MOSFET, Transistor

NDD02N40, NDT02N40 N-Channel Power MOSFET 400 V, 5.5 W Features • 100% Avalanche Tested • These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant ABSOLUTE MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol NDD NDT Unit Drain−to−Source Voltage Gate−to�
ON Semiconductor
ON Semiconductor		mosfet
5NDD02N60ZN-Channel Power MOSFET, Transistor

NDF02N60Z, NDD02N60Z N-Channel Power MOSFET 600 V, 4.8 W Features • Low ON Resistance • Low Gate Charge • ESD Diode−Protected Gate • 100% Avalanche Tested • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise n
ON Semiconductor
ON Semiconductor		mosfet
6NDD03N40ZN-Channel Power MOSFET, Transistor

NDD03N40Z, NDT03N40Z N-Channel Power MOSFET 400 V, 3.4 W Features • 100% Avalanche Tested • Extremely High dv/dt Capability • Gate Charge Minimized • Very Low Intrinsic Capacitance • Improved Diode Reverse Recovery Characteristics • Zener−protected • These Devices are Pb-Free, Halo
ON Semiconductor
ON Semiconductor		mosfet
7NDD03N50ZN-Channel Power MOSFET, Transistor

DataSheet.in NDD03N50Z N-Channel Power MOSFET 500 V, 3.3 W Features • • • • Low ON Resistance Low Gate Charge 100% Avalanche Tested These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant http://onsemi.com VDSS 500 V RDS(on) (MAX) @ 1.15 A 3.3 W ABSOLUTE MAXIMUM RATING
ON Semiconductor
ON Semiconductor		mosfet



Esta página es del resultado de búsqueda del NDD60N360U1. Si pulsa el resultado de búsqueda de NDD60N360U1 se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin.


nuevas actualizaciones

Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

 Sanken
Sanken		 PDF


DataSheet.es    |   2020    |  Privacy Policy  |  Contacto  |  Sitemap