|
|
PDF NDTL1N60Z Data sheet ( Hoja de datos )
| Número de pieza | NDTL1N60Z | |
| Descripción | N-Channel Power MOSFET / Transistor | |
| Fabricantes | ON Semiconductor | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de NDTL1N60Z (archivo pdf) en la parte inferior de esta página. Total 5 Páginas | ||
|
No Preview Available !
NDDL1N60Z, NDTL1N60Z
Product Preview
N-Channel Power MOSFET
600 V, 15 W
Features
• 100% Avalanche Tested
• These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS
Compliant
ABSOLUTE MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol NDD NDT Unit
Drain−to−Source Voltage
CStoenatdinyuSoutasteD, rTaCin=C2u5rr°eCnt(NRoqtJeC 1)
Continuous Drain Current
Steady State, TC = 100°C
R(NqoJCte
1)
Pulsed Drain Current, tp = 10 ms
PStoewaedryDSitsastiep,aTtiCon=–2R5°qCJC
Gate−to−Source Voltage
Single Pulse Drain−to−Source
Avalanche Energy (IPK = 1.0 A)
Peak Diode Recovery (Note 2)
VDSS
ID
ID
IDM
PD
VGS
EAS
dv/dt
600
0.8 0.3
V
A
0.5 0.15 A
3.2 1.0
A
25 3 W
±30 V
60 mJ
4.5 V/ns
Source Current (Body Diode)
Lead Temperature for Soldering
Leads
IS
0.5 0.3
A
TL 260 °C
Operating Junction and Storage
Temperature
TJ, TSTG −55 to +150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Limited by maximum junction temperature
2. IS = 1.5 A, di/dt ≤ 100 A/ms, VDD ≤ BVDSS
THERMAL RESISTANCE
Parameter
Symbol Value Unit
Junction−to−Case (Drain)
NDDL1N60Z
Junction−to−Ambient (Note 4) NDDL1N60Z
(Note 3) NDDL1N60Z−1
(Note 4) NDTL1N60Z
(Note 5) NDTL1N60Z
RqJC
RqJA
5 °C/W
50 °C/W
96
62
151
3. Insertion mounted.
4. Surface−mounted on FR4 board using 1” sq. pad size
(Cu area = 1.127” sq. [2 oz] including traces).
5. Surface−mounted on FR4 board using minimum recommended pad size
(Cu area = 0.026” sq. [2 oz]).
This document contains information on a product under development. ON Semiconductor
reserves the right to change or discontinue this product without notice.
© Semiconductor Components Industries, LLC, 2013
May, 2013 − Rev. P1
1
http://onsemi.com
V(BR)DSS
600 V
RDS(ON) MAX
15 W @ 10 V
N−Channel MOSFET
D (2)
G (1)
S (3)
MARKING DIAGRAMS
4
Drain
12
3
4 DPAK
CASE 369C
STYLE 2
2
1 Drain 3
4
IPAK
Gate 4 Source
Drain
CASE 369D
STYLE 2
1 23
Y = Year
WW = Work Week
G = Pb−Free Package
1 23
Gate Drain Source
1 23
A
Y
W
01N60
Drain
4 SOT−223
4
CASE 318E
STYLE 3
= Assembly Location
= Year
= Work Week
= Specific Device Code
AYW
L1N60ZG
G
12 3
Gate Drain Source
G = Pb−Free Package
(*Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
Publication Order Number:
NDDL1N60Z/D
1 page  
NDDL1N60Z, NDTL1N60Z
PACKAGE DIMENSIONS
L3
L4
b2
e
E
b3
4
12 3
DPAK (SINGLE GAUGE)
CASE 369C−01
ISSUE D
AC
A
B c2
D
DETAIL A
H
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCHES.
3. THERMAL PAD CONTOUR OPTIONAL WITHIN DI-
MENSIONS b3, L3 and Z.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS, OR BURRS. MOLD
FLASH, PROTRUSIONS, OR GATE BURRS SHALL
NOT EXCEED 0.006 INCHES PER SIDE.
Z
5. DIMENSIONS D AND E ARE DETERMINED AT THE
OUTERMOST EXTREMES OF THE PLASTIC BODY.
6. DATUMS A AND B ARE DETERMINED AT DATUM
PLANE H.
bc
0.005 (0.13) M C
L2
GAUGE
PLANE
H
C
SEATING
PLANE
L
L1
DETAIL A
ROTATED 905 CW
A1
INCHES
DIM MIN MAX
A 0.086 0.094
A1 0.000 0.005
b 0.025 0.035
b2 0.030 0.045
b3 0.180 0.215
c 0.018 0.024
c2 0.018 0.024
D 0.235 0.245
E 0.250 0.265
e 0.090 BSC
H 0.370 0.410
L 0.055 0.070
L1 0.108 REF
L2 0.020 BSC
L3 0.035 0.050
L4 −−− 0.040
Z 0.155 −−−
MILLIMETERS
MIN MAX
2.18 2.38
0.00 0.13
0.63 0.89
0.76 1.14
4.57 5.46
0.46 0.61
0.46 0.61
5.97 6.22
6.35 6.73
2.29 BSC
9.40 10.41
1.40 1.78
2.74 REF
0.51 BSC
0.89 1.27
−−− 1.01
3.93 −−−
SOLDERING FOOTPRINT*
6.20
0.244
3.00
0.118
2.58
STYLE 2:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
0.102
5.80
0.228
1.60
0.063
6.17
0.243
ǒ ǓSCALE 3:1
mm
inches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks,
copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC
reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any
particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without
limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications
and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC
does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for
surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where
personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and
its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly,
any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture
of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: [email protected]
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5817−1050
http://onsemi.com
5
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
NDDL1N60Z/D
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet NDTL1N60Z.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| NDTL1N60Z | N-Channel Power MOSFET / Transistor | ON Semiconductor |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |