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PDF NDF60N360U1 Data sheet ( Hoja de datos )
| Número de pieza | NDF60N360U1 | |
| Descripción | N-Channel Power MOSFET / Transistor | |
| Fabricantes | ON Semiconductor | |
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NDF60N360U1,
NDD60N360U1
N-Channel Power MOSFET
600 V, 360 mW
Features
• 100% Avalanche Tested
• These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS
Compliant
ABSOLUTE MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol NDF NDD Unit
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous
Drain
Current
RqJC
Steady
State
TC =
25°C
TC =
100°C
VDSS
VGS
ID
600
±25
13
(Note 1)
11
8.1
(Note 1)
6.9
V
V
A
Power
Steady
TC =
PD
30 114 W
Dissipation – State
25°C
RqJC
Pulsed Drain
Current
tp = 10 ms
IDM 51 44 A
Operating Junction and Storage
Temperature
Source Current (Body Diode)
Single Pulse Drain−to−Source
Avalanche Energy
TJ,
TSTG
IS
EAS
−55 to +150
13 11
64
°C
A
mJ
RMS Isolation Voltage (t = 0.3 sec.,
R.H. ≤ 30%, TA = 25°C) (Figure 15)
VISO
4500
−
V
Peak Diode Recovery (Note 2)
Lead Temperature for Soldering
Leads
dv/dt
TL
15 V/ns
260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Limited by maximum junction temperature
2. ISD ≤ 11 A, di/dt ≤ 400 A/ms, VDS peak ≤ V(BR)DSS, VDD = 80% V(BR)DSS
THERMAL RESISTANCE
Parameter
Junction−to−Case (Drain)
NDF60N360U1
NDD60N360U1
Symbol
RqJC
Value
4.1
1.1
Unit
°C/W
Junction−to−Ambient Steady State
(Note 3)
NDF60N360U1
(Note 4)
NDD60N360U1
(Note 3)
NDD60N360U1−1
(Note 3)
NDD60N360U1−35G
RqJA
3. Insertion mounted
4. Surface mounted on FR4 board using 1″ sq. pad size
(Cu area = 1.127 in sq [2 oz] including traces)
°C/W
50
47
98
95
http://onsemi.com
V(BR)DSS
600 V
RDS(ON) MAX
360 mW @ 10 V
N−Channel MOSFET
D (2)
G (1)
1 23
TO−220FP
CASE 221AH
4
12
3
DPAK
CASE 369C
S (3)
4
1 23
IPAK
CASE 369D
4
12 3
IPAK
CASE 369AD
MARKING AND ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 3 of this data sheet.
© Semiconductor Components Industries, LLC, 2013
May, 2013 − Rev. 0
1
Publication Order Number:
NDF60N360U1/D
1 page  
NDF60N360U1, NDD60N360U1
TYPICAL CHARACTERISTICS
1.15 100,000
1.10
1.05
1.00
0.95
ID = 250 mA
10,000
TJ = 150°C
0.90
0.85
1000
TJ = 125°C
0.80
0.75
100 TJ = 100°C
0.70
0.65
−50 −25 0 25 50 75 100 125 150
10
0 100 200 300 400 500 600
TJ, JUNCTION TEMPERATURE (°C)
Figure 7. Threshold Voltage Variation with
Temperature
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 8. Drain−to−Source Leakage Current
vs. Voltage
10,000
1000
100
COSS
CISS
CRSS
VGS = 0 V
TJ = 25°C
f = 1 MHz
14
12
10
8 QGS
6
QT
VDS
QGD
350
300
250
VGS
200
150
10
1
0.1
100
10
1
1 10 100
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 9. Capacitance Variation
1000
TJ = 150°C
TJ = 125°C
TJ = 100°C
TJ = 25°C
4
VDS = 300 V
100
TJ = 25°C
2
ID = 13 A
50
00
0 4 8 12 16 20 24 28
QG, TOTAL GATE CHARGE (nC)
Figure 10. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
1000
100
VGS = 10 V
VDD = 300 V
td(off)
tf
tr
10 td(on)
0.1 TJ = −55°C
0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 11. Diode Forward Voltage vs. Current
1
0.1
1
10 100
RG, GATE RESISTANCE (W)
Figure 12. Resistive Switching Time Variation
vs. Gate Resistance
http://onsemi.com
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| PDF Descargar | [ Datasheet NDF60N360U1.PDF ] | |
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