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PDF NDF60N550U1 Data sheet ( Hoja de datos )
| Número de pieza | NDF60N550U1 | |
| Descripción | N-Channel Power MOSFET / Transistor | |
| Fabricantes | ON Semiconductor | |
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NDF60N550U1,
NDD60N550U1
Product Preview
N-Channel Power MOSFET
600 V, 550 mW
Features
• 100% Avalanche Tested
• These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS
Compliant
ABSOLUTE MAXIMUM RATINGS (TJ = 25°C unless otherwise
noted)
Parameter
Symbol NDF NDD Unit
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous
Drain
Current
R(NqoJCte 1)
Steady
State
2T5C°C=
TC =
100°C
Power
Dissipation –
RqJC
Pulsed Drain
Current
Steady
State
TC =
25°C
tp = 10 ms
VDSS
VGS
ID
PD
IDM
600
±25
9.5 8.5
6 5.4
28 96
V
V
A
W
38 34 A
Operating Junction and Storage
Temperature
Source Current (Body Diode)
Single Pulse Drain−to−Source
Avalanche Energy
TTSJT,G
IS
EAS
−55 to +150
9.5 8.5
TBD
°C
A
mJ
Lead Temperature for Soldering
Leads
TL
260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Limited by maximum junction temperature
THERMAL RESISTANCE
Parameter
Symbol
Junction−to−Case (Drain)
NDF60N550U1
NDD60N550U1
RqJC
Junction−to−Ambient Steady State
NDF60N550U1
NDD60N550U1
NDD60N550U1−1
RqJA
Value
4.4
1.3
50
33
96
Unit
°C/W
°C/W
This document contains information on a product under development. ON Semiconductor
reserves the right to change or discontinue this product without notice.
http://onsemi.com
V(BR)DSS
600 V
RDS(ON) MAX
550 mW @ 10 V
N−Channel MOSFET
D (2)
G (1)
S (3)
4
1 23
TO−220FP
CASE 221AH
1 23
IPAK
CASE 369D
4
12
3
DPAK
CASE 369AA
MARKING AND ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 3 of this data sheet.
© Semiconductor Components Industries, LLC, 2012
October, 2012 − Rev. P1
1
Publication Order Number:
NDF60N550U1/D
1 page  
NDF60N550U1, NDD60N550U1
PACKAGE DIMENSIONS
IPAK
CASE 369D−01
ISSUE C
V
S
−T−
SEATING
PLANE
B
R
4
123
A
K
C
E
F
G
J
D 3 PL
0.13 (0.005) M T
H
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
INCHES MILLIMETERS
Z
DIM MIN MAX MIN MAX
A 0.235 0.245 5.97 6.35
B 0.250 0.265 6.35 6.73
C 0.086 0.094 2.19 2.38
D 0.027 0.035 0.69 0.88
E 0.018 0.023 0.46 0.58
F 0.037 0.045 0.94 1.14
G 0.090 BSC
2.29 BSC
H 0.034 0.040 0.87 1.01
J 0.018 0.023 0.46 0.58
K 0.350 0.380 8.89 9.65
R 0.180 0.215 4.45 5.45
S 0.025 0.040 0.63 1.01
V 0.035 0.050 0.89 1.27
Z 0.155 −−− 3.93 −−−
STYLE 2:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
http://onsemi.com
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| PDF Descargar | [ Datasheet NDF60N550U1.PDF ] | |
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