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NLAS3257 PDF даташит

Спецификация NLAS3257 изготовлена ​​​​«ON Semiconductor» и имеет функцию, называемую «Low Voltage SPDT Mux / Demux Analog Switch».

Детали детали

Номер произв NLAS3257
Описание Low Voltage SPDT Mux / Demux Analog Switch
Производители ON Semiconductor
логотип ON Semiconductor логотип 

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NLAS3257 Даташит, Описание, Даташиты
NLAS3157, NLAS3257
Low Voltage SPDT Mux /
Demux Analog Switch
The NLAS3157 Mux / Demux Analog Switch is an advanced high−
speed single−pole double−throw (SPDT) CMOS switch. It can be used
as an analog switch or as a low−delay bus switch. Break−before−make
switching prevents both switches being enabled simultaneously. This
eliminates signal disruption during switching. The control input, S, is
independent of supply voltage line switch in an ultra−small footprint.
Features
High Speed: tPD = 0.25 ns (Max) @ VCC = 4.5 V
RON: 8.5 W Typ @ VCC = 4.2 V
CON: 7.5 pF Typ @ VCC = 3.3 V
VCC Range: 1.65 V to 4.5 V
Ultra−Small 1 x 1 mm Package
This Device is Pb−Free, Halogen Free/BFR Free and RoHS
Compliant
Typical Applications
Mobile Phones, PDAs, Camera
VCC 1
6S
B1 1
6S
B1 2
5 GND GND 2
5 VCC
A3
4 B0
Figure 1. ULLGA6
(NLAS3157)
(Top View)
B0 3
4A
Figure 2. XLLGA6
(NLAS3257)
(Top View)
www.onsemi.com
ULLGA6
1.0 x 1.0
CASE 613AD
MARKING
DIAGRAMS
M
Y = Specific Device Code
M = Date Code
XLLGA6
1.0 x 1.0
CASE 713AD
LM
L = Specific Device Code
M = Date Code
FUNCTION TABLE
Input S
Function
L A = B0
H A = B1
ORDERING INFORMATION
See detailed ordering and shipping information on page 5 of
this data sheet.
A B0
B1
S
Figure 3. Logic Diagram
© Semiconductor Components Industries, LLC, 2016
September, 2016 − Rev. 2
1
Publication Order Number:
NLAS3157/D









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NLAS3257 Даташит, Описание, Даташиты
NLAS3157, NLAS3257
Table 1. MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
VCC
VIN
VIS
IIK
IOK
IO
ICC
IGND
TSTG
TL
TJ
qJA
PD
MSL
DC Supply Voltage
Control Input Voltage (S Pin)
Switch Input / Output Voltage (A, BO, B1 Pins)
Control DC Input Diode Current (S Pin)
Switch I/O Port DC Diode Current (A, BO, B1 Pins)
On−State Switch Current
Continuous Current Through VCC or GND
DC Supply Current per Supply Pin
DC Ground Current per Ground Pin
Storage Temperature Range
Lead Temperature, 1 mm from Case for 10 Seconds
Junction Temperature Under Bias
Thermal Resistance (Note 1)
Power Dissipation in Still Air at 85°C (Note 1)
Moisture Sensitivity
VIN < GND
VI/O < GND or VI/O > VCC
−0.5 to +5.5
−0.5 to +5.5
−0.5 to VCC + 0.5
−50
±50
±128
±150
±150
±150
−65 to +150
260
150
407
1.5
Level 1
V
V
V
mA
mA
mA
mA
mA
mA
°C
°C
°C
°C/W
mW
FR
VESD
Flammability Rating
ESD Withstand Voltage
Oxygen Index: 28 to 34
Human Body Mode (Note 2)
Machine Mode (Note 3)
Charged Device Mode (Note 4)
UL 94 V−0 @ 0.125 in
>8000
>300
>2000
V
ILATCHUP Latchup Performance Above VCC and Below GND at 85°C (Note 5)
±100
mA
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Measured with minimum pad spacing on an FR4 board, using 10 mm−by−1 inch, 2 ounce copper trace no air flow.
2. Tested to EIA/ JESD22−A114−A
3. Tested to EIA/ JESD22−A115−A
4. Tested to JESD22−C101−A
5. Tested to EIA / JESD78
Table 2. RECOMMENDED OPERATING CONDITIONS
Symbol
Parameter
Min Max Unit
VCC
VI
VIS
TA
Dt / DV
Positive DC Supply Voltage
Control Input Voltage (S Pin)
Switch Input / Output Voltage (A, BO, B1 Pins)
Operating Free−Air Temperature
Input Transition Rise or Fall Rate
Control Input
Switch I/O
1.65
0
0
−40
0
0
4.5 V
4.5 V
VCC
V
+85 °C
5 ns/V
DC
Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond
the Recommended Operating Ranges limits may affect device reliability.
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NLAS3257 Даташит, Описание, Даташиты
NLAS3157, NLAS3257
Table 3. DC ELECTRICAL CHARACTERISTICS (Typical: T = 25°C, VCC = 3.3 V)
−40°C to +85°C
Symbol
VIH
Parameter
Control Input,
HIGH Voltage
Test Conditions
VCC (V)
1.65
2.7
3.3
4.2
Min Typ Max Unit
0.75 V
1.25
1.52
1.94
VIL Control Input,
LOW Voltage
1.65 0.25 V
2.7 0.4
3.3 0.4
4.2 0.5
IIN Control Input,
Leakage Current
0 VIS VCC
1.65 − 4.5
±1.0 mA
ICC Quiescent Supply Current VIS = VCC or GND; ID = 0 A
INC (OFF) NC or NO Leakage Current VIS = 1.65 V to 4.5 V
INO (OFF)
ICOM (ON) COM ON Leakage Current VIS = 1.65 V to 4.5 V
ON RESISTANCE (Typical: T = 255C)
1.65 − 4.5
4.5
4.5
1.0 mA
±10 ±100 nA
±10 ±100 nA
RON Peak On−Resistance
ION = 8 mA
VIS = 0 V to VCC
1.65
15.4 23.2
W
2.7 10.8 12.4
3.3 9.5 11.0
4.2 8.5 9.9
RFLAT On−Resistance Flatness
ION = 8 mA
VIS = 0 V to VCC
1.65
2.7
3.3
4.2
5.5 10.2 W
2.9 3.3
2.7 3.3
2.8 3.3
DRON Delta On−Resistance
ION = 8 mA
VIS = 0 V to VCC
1.65
2.7
3.3
4.2
0.3 0.35 W
0.3 0.35
0.3 0.35
0.3 0.35
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
Table 4. AC ELECTRICAL CHARACTERISTICS
Symbol
Parameter
Test Conditions
VCC (V)
TIMING/FREQUENCY (Typical: T = 255C, VCC = 3.3 V, RL = 50 W, CL = 35 pF, f = 1 MHz)
tPD Propagation Delay, A to (See Figures 4 and 5)
Bn or Bn to A
1.65 − 4.5
tON
tOFF
TBBM
Turn−ON Time
Turn−OFF Time
Break−Before−Make
Time
(See Figures 7 and 8)
(See Figures 7 and 8)
(See Figure 6)
1.65 − 4.5
1.65 − 4.5
1.65 − 4.5
BW −3 dB Bandwidth
CL = 5 pF
ISOLATION (Typical: T = 255C, VCC = 3.3 V, RL = 50 W, CL = 5 pF)
OIRR OFF−Isolation
f = 240 MHz (See Figure 9)
XTALK
Non−Adjacent Channel f = 240 MHz
Crosstalk
1.65 − 4.5
1.65 − 4.5
1.65 − 4.5
−405C to +855C
Min Typ Max
0.25
3.1 13.0 30.0
3.4 12.0 25.0
2.0
1000
-21
-21
Unit
ns
ns
ns
ns
MHz
dB
dB
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