PDF W989D2KB Data sheet ( Hoja de datos )

Número de pieza	W989D2KB
Descripción	512Mb Mobile LPSDR
Fabricantes	Winbond
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No Preview Available ! W989D6KB / W989D2KB 1. GENERAL DESCRIPTION 512Mb Mobile LPSDR The Winbond 512Mb Low Power SDRAM is a low power synchronous memory containing 536,870,912 memory cells fabricated with Winbond high performance process technology. It is designed to consume less power than the ordinary SDRAM with low power features essential for applications which use batteries. It is available in two organizations: 4,194,304-words × 4 banks × 32 bits or 8,388,608 words × 4 banks × 16 bits. The device operates in a fully synchronous mode, and the output data are synchronized to positive edges of the system clock and is capable of delivering data at clock rate up to 166MHz. The device supports special low power functions such as Partial Array Self Refresh (PASR) and Automatic Temperature Compensated Self Refresh (ATCSR). The Low Power SDRAM is suitable for 2.5G / 3G cellular phone, PDA, digital still camera, mobile game consoles and other handheld applications where large memory density and low power consumption are required. The device operates from 1.8V power supply, and supports the 1.8V LVCMOS bus interface. 2. FEATURES  Power supply VDD = 1.7V~1.95V  VDDQ = 1.7V~1.95V  Frequency : 166MHz(-6)  Standard Self Refresh Mode  Programmable Partial Array Self Refresh  Power Down Mode  Deep Power Down Mode (DPD)  Programmable output buffer driver strength  Automatic Temperature Compensated Self Refresh  CAS Latency: 2 and 3  Burst Length: 1, 2, 4, 8, and full page  Refresh: refresh cycle 64ms  Interface: LVCMOS  Support package : 54 balls VFBGA (x16) 90 balls VFBGA (x32)  Operating Temperature Range Extended (-25°C ~ +85°C) Industrial (-40°C ~ +85°C) -1- Publication Release Date : October 07, 2013 Revision : A01-003 1 page W989D6KB / W989D2KB 4. PIN CONFIGURATION 4.1 Ball Assignment: LPSDR X 16 1 A VSS B DQ14 C DQ12 D DQ10 E DQ8 F UDQM G A12 H A8 J VSS 2 DQ15 DQ13 DQ11 DQ9 NC CLK A11 A7 A5 4.2 Ball Assignment: LPSDR X 32 1 A DQ26 B DQ28 C VSSQ D VSSQ E VDDQ F VSS G A4 H A7 J CLK K DQM1 L VDDQ M VSSQ N VSSQ P DQ11 R DQ13 2 DQ24 VDDQ DQ27 DQ29 DQ31 DQM3 A5 A8 CKE NC DQ8 DQ10 DQ12 VDDQ DQ15 54Ball VFBGA 3 456 7 VSSQ VDDQ VDDQ VSSQ VSSQ VDDQ VDDQ VSSQ VSS VDD CKE CAS A9 BA0 A6 A0 A4 A3 (Top View) Pin Configuration 90Ball VFBGA 3 456 7 VSS VSSQ DQ25 DQ30 NC A3 VDD VDDQ DQ22 DQ17 NC A2 A6 A12 A9 NC VSS DQ9 DQ14 A10 NC BA0 CAS VDD DQ6 DQ1 VSSQ VSS VDDQ VDD (Top View) Pin Configuration 512Mb Mobile LPSDR 8 DQ0 DQ2 DQ4 DQ6 LDQM RAS BA1 A1 A2 9 VDD DQ1 DQ3 DQ5 DQ7 WE CS A10 VDD 8 DQ23 VSSQ DQ20 DQ18 DQ16 DQM2 A0 BA1 CS WE DQ7 DQ5 DQ3 VSSQ DQ0 9 DQ21 DQ19 VDDQ VDDQ VSSQ VDD A1 A11 RAS DQM0 VSSQ VDDQ VDDQ DQ4 DQ2 -5- Publication Release Date : October 07, 2013 Revision : A01-003 5 Page W989D6KB / W989D2KB (x32) Parameter Operating current: Active mode; burst = 1; READ or WRITE; tRC = tRC (MIN) Standby current: Power-down mode; All banks idle; CKE = LOW Standby current: Nonpower-down mode; All banks idle; CKE = HIGH Standby current: Active mode; CKE = LOW; CS# = HIGH; All banks active; No accesses in progress Standby current: Active mode; CKE = HIGH; CS# = HIGH; All banks active after tRCD met; No accesses in progress Operating current: Burst mode; READ or WRITE; All banks active; Half of DQ toggling every cycle Auto refresh current:; tRFC=tRFC (MIN) CKE = HIGH; CS# = HIGH Deep Power Down Mode 512Mb Mobile LPSDR -6 -75 Sym. Unit Notes Max. Max. IDD1 38 35 mA 2, 3, 4 Idd2P 0.3 0.3 mA 5 Idd2N 10 10 mA Idd3P 3 3 mA 3, 4, 6 Idd3N 25 25 mA 3, 4, 6 Idd4 75 70 mA 2, 3, 4 Idd5 75 Izz 10 75 mA 2, 3, 4, 6 10 μA 5,8 - 11 - Publication Release Date : October 07, 2013 Revision : A01-003 11 Page

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Número de pieza	Descripción	Fabricantes
W989D2KB	512Mb Mobile LPSDR	Winbond

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